NDT3055

NDT3055 N-CHANNEL MOSFET FOR SWITCHING Unit:mm SOT-223 。 10 6.50±0.2 3.00±0.1 0.75 (min) 7.0±0.3 ■ Features 3.50±0.2 4 ● VDS (V) = 60V 1 ● ID = 3 A (VGS = 10V) 2 3 2.30 (typ) 0.250 0.84 (max) 0.66 (min) 1.80 (max) MI JS 1.6 ± 0.1 ● RDS(ON) ＜ 80mΩ (VGS = 10V) Gauge Plane 0.02 ~ 0.1 1.Gate 2.Drain 3.Source 4.Drain 4.60 (typ) O CR mi Se ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta=25℃ Pulsed Drain Current Thermal Resistance.Junction- to-Ambient Rating VDS 60 VGS ±20 ID IDM Ta=25℃ Ta=70℃ (Note.1) (Note.2) Junction Temperature Storage Temperature Range PD RthJA Unit V 3 2.6 A 10 1.25 W r to Power Dissipation Symbol uc Ta=70℃ nd co Parameter 0.8 100 166 TJ 150 Tstg -55 to 150 ℃/W ℃ Note.1: Surface Mounted on FR4 Board, t ≤ 5 sec. Note.2: Surface Mounted on FR4 Board www.jsmsemi.com 第１／４页 NDT3055 N-CHANNEL MOSFET FOR SWITCHING ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V Gate Threshold Voltage VGS(th) VDS=VGS , ID=250μA Static Drain-Source On-Resistance RDS(On) MI JS Drain-Source Breakdown Voltage On State Drain Current ID(ON) gFS Input Capacitance Ciss Output Capacitance O CR Forward Transconductance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-Off DelayTime 10 nA 3 V VGS=10V, ID=2A 80 VGS=4.5V, ID=1.7A 85 4 VGS≥4.5V, VDS=4.5V 3 VDS=4.5V, ID=2A 4.6 S 240 VGS=0V, VDS=25V, f=1MHz pF 50 15 VGS=0V, VDS=0V, f=1MHz 0.5 3.3 4.8 VGS=10V, VDS=30V, ID=2A nC 1 7 15 10 20 17 35 6 15 tf IS VSD VGS=4.5V, VDS=30V, ID=1A, RL=30Ω,RG=6Ω IS=1A,VGS=0V ns 1 A 1.2 V r to uc Note.Pulse test; pulse width ≤ 300 us, duty cycle ≤ 2%. Ω 10 0.8 tr Turn-Off Fall Time mΩ A td(on) td(off) uA ±100 1.5 Qgd Maximum Body-Diode Continuous Current Diode Forward Voltage 0.5 VGS≥4.5V, VDS=10V Unit V VDS=60V, VGS=0V, TJ=55℃ nd co Turn-On Rise Time Max VDS=60V, VGS=0V Qg Qgs Typ 60 ID=250μA, VGS=0V mi Se Total Gate Charge Min www.jsmsemi.com 第２／４页 NDT3055 N-CHANNEL MOSFET FOR SWITCHING ■ Typical Characterisitics Ou t p u t Ch ar ac t er i s t i c s Tr an s f er Ch ar ac t er i s t i c s 12 12 I D - Drain Current (A) 9 4 V 6 3 0 0 2 4 9 6 3 3 V T C = 125 C 25 C 6 8 0 10 0 1 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) 0.6 0.4 ) 4 5 300 C iss 200 100 V GS = 4.5 V 0.2 3 Capacitance 400 nd co r DS(on) - On-Resistance ( mi Se 0.8 2 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 1.0 - 55 C 1, 2 V O CR MI JS I D - Drain Current (A) V GS = 10 thru 5 V C oss C rss 0.0 0 0 3 6 9 0 12 1.8 r DS(on) - On-Resistance ( ) (Normalized) - Gate-to-Source Voltage (V) V GS 2.0 V DS = 30 V I D = 2.0 A 8 12 18 24 30 VDS - Drain-to-Source Voltage (V) Gate Charge 10 6 6 4 2 r to ID - Drain Current (A) uc V GS = 10 V On-Resistance vs. Junction T emperature V GS = 10 V I D = 2.0 A 1.6 1.4 1.2 1.0 0.8 0 0 1 2 3 4 5 0.6 - 50 Qg - Total Gate Charge (nC) - 25 0 25 50 75 100 125 150 TJ - Junction Temperature ( C) www.jsmsemi.com 第３／４页 NDT3055 N-CHANNEL MOSFET FOR SWITCHING ■ Typical Characterisitics Source-Drain Diode Forward V oltage On-Resistance vs. Gate-to-Source 0.6 10 Voltage r DS(on) - On-Resistance ( I S - Source Current (A) ) 0.5 T J = 150 C MI JS 0.00 0.2 0.4 O CR 1 T J = 25 C 0.6 0.8 1.0 0.4 0.3 ID = 2.0 A 0.2 0.1 0.0 0 1.2 V SD - S o u rce -to -D ra in V o lta g e (V ) 2 4 8 10 V GS - Gate-to-Source Voltage (V) Single Pulse Power Threshold V oltage 0.4 12 mi Se ID = 250 A 0.2 Power (W) - 0.0 - 0.2 9 6 nd co V GS(th) Variance (V) 6 - 0.4 3 - 0.6 . - 25 0 25 50 75 100 125 0 150 0.01 TJ - Temperature ( C) uc - 0.8 - 50 0.1 1 r to Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance 100 10 Time (sec) Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 500 Square Wave Pulse Duration (sec) www.jsmsemi.com 第４／４页