YFW120N10AD

YFW120N10AD 100V N-CHANNEL CHANNEL ENHANCEMENT MODE MOSFET MAIN CHARACTERISTICS ID 120A VDSS 100V RDSON-typ(@VGS=10V) ＜6m mΩ(Type:4.6 mΩ) Application  Battery protection  Load switch  Uninterruptible power supply TO-252 Product Specification Classification Part Number Package Marking Pack YFW120N10AD TO-252 YFW 120N10AD XXXXX 2500PCS/Tape =25°C unless otherwise specified Maximum Ratings at Tc=25°C Characteristics Symbols Value Units Drain-Source Voltage VDS 100 V Gate - Source Voltage VGS 20 ±20 V Continue Drain Current ID 120 0 A Pulsed Drain Current(Note1) IDM 300 0 A Power Dissipation PD 8 148 W Single Pulse Avalanche Energy (Note1) EAS 130 0 mJ TJ 150 0 °C Storage Temperature Range TSTG -55 55 to +150 +1 °C Thermal Resistance, Junction to case RθJC 4 0.84 °C/W Thermal Resistance, Junction to ambient RθJA 62 °C/W Operating Temperature Range www.yfwdiode.com 1/5 GuangDong YFW Electronics Co, Ltd. YFW120N10AD Maximum Ratings at Tc=25°C unless otherwise specified Characteristics Test Condition Symbols Min Typ Max Units Drain-Source Breakdown Voltage VGS=0V, ID=250uA BVDSS 100 - - V Drain-Source Leakage Current VDS=100V , VGS=0V IDSS - - 1 μA Gate Leakage Current VGS=±20V, VDS=0V IGSS - - ±100 nA Gate-Source Threshold Voltage VDS= VGS, ID=250μA VGS(th) 1 - 3 V - 4.6 6 - 6.3 9 Ciss - 3530 - Coss - 560.1 - Crss - 9 - td(on) - 22.5 - Tr - 8.6 - td(OFF) - 66.6 - tf - 42.1 - Qg - 65.7 - Qgs - 8.4 - Qgd - 12.2 - IS - - 120 A VSD - - 1.3 V trr - 67 - ns Qrr - 160 - nC Irrm - 3.9 - A Drain-Source on- State Resistance note3 VGS=10V, ID=1A VGS=4.5V, ID=1A Input Capacitance VDS=50V VGS=0V f=1MHz Output Capacitance Reverse Transfer Capacitance Turn-on delay time(Note2) VDS=50V ID=10A RG=2Ω VGS=10V Rise Time(Note2) Turn-Off Delay Time Fall Time(Note2) Total Gate Charge(Note2) VDS=50V VGS=10V ID=10A Gate-to Source Charge(Note2) Gate to Drain Charge(Note2) Maximun Body-Diode Continuous Current Drain-Source Diode Forward Voltage VGS=0V , IS=30A , TJ=25℃ Reverse Recovery Time(Note2) Reverse Recovery Charge(Note2) TJ = 25℃, IS=10A di / dt = 1000 A/µs Peak reverse recovery current RDS(ON) mΩ PF ns nC Note1:Pulse test: 300 µs pulse width, 2 % duty cycle Note2:Pulse test: 300 µs pulse width, 2 % duty cycle www.yfwdiode.com 2/5 GuangDong YFW Electronics Co, Ltd. YFW120N10AD Ratings and Characteristic Curves www.yfwdiode.com 3/5 GuangDong YFW Electronics Co, Ltd. YFW120N10AD Ratings and Characteristic Curves www.yfwdiode.com 4/5 GuangDong YFW Electronics Co, Ltd. YFW120N10AD Package Outline Dimensions Millimeters TO-252 Dim. A A2 B B2 C C2 D D1 E E1 G H L L2 V1 V2 Min. 2.10 0 0.66 5.18 0.40 0.44 5.90 6.40 4.63 4.47 9.50 1.09 1.35 0° Typ. 5.30REF 7° - Max. 2.50 0.10 0.86 5.48 0.60 0.58 6.30 6.80 4.67 10.70 1.21 1.65 6° All Dimensions in millimeter www.yfwdiode.com 5/5 GuangDong YFW Electronics Co, Ltd.