HSH18N20

HSH18N20 N-Ch 200V Fast Switching MOSFETs Description Product Summary The HSH18N20 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSH18N20 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. VDS 200 V RDS(ON),max 170 mΩ ID 18 A TO263 Pin Configuration ⚫ ⚫ ⚫ ⚫ Super Low Gate Charge Green Device Available Excellent Cdv/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 200 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ ±20 V Continuous Drain Current, VGS @ 10V1 18 A Continuous Drain Current, VGS @ 10V1 11.7 A 40 A 15 mJ 10 A Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation3 83 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC Junction-Case1 www.hs-semi.cn Thermal Resistance Ver 2.0 Typ. 1 Max. Unit --- 60 ℃/W --- 1.1 ℃/W 1 HSH18N20 N-Ch 200V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS RDS(ON) VGS(th) IDSS Parameter Drain-Source Breakdown Voltage Conditions VGS=0V , ID=250uA Min. Typ. Max. Unit 200 --- --- V Static Drain-Source On-Resistance2 VGS=10V , ID=9A --- --- 170 m Static Drain-Source On-Resistance2 VGS=4.5V , ID=9A --- --- 180 m VGS=VDS , ID =250uA 1.2 --- 2.5 V VDS=160V , VGS=0V , TJ=25℃ --- --- 1 VDS=160V , VGS=0V , TJ=55℃ --- --- 5 Gate Threshold Voltage Drain-Source Leakage Current uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=9A --- 22 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2 ---  Qg Total Gate Charge (10V) --- 45 --- Qgs Gate-Source Charge --- 9 --- Qgd Gate-Drain Charge --- 10.5 --- Td(on) Turn-On Delay Time VDS=80V , VGS=10V , ID=9A nC --- 13 --- Rise Time VDD=50V , VGS=10V , RG=3.3 --- 8.2 --- Turn-Off Delay Time ID=9A --- 25 --- Fall Time --- 11 --- Ciss Input Capacitance --- 2047 --- Coss Output Capacitance --- 109 --- Crss Reverse Transfer Capacitance --- 70 --- Min. Typ. Max. Unit --- --- 18 A --- --- 40 A Tr Td(off) Tf VDS=25V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Current1,5 Conditions IS Continuous Source ISM Pulsed Source Current2,5 VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V trr Reverse Recovery Time IF=10A , dI/dt=100A/µs , --- 37 --- nS Qrr Reverse Recovery Charge TJ=25℃ --- 103 --- nC VG=VD=0V , Force Current Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.3mH,IAS=10A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSH18N20 N-Ch 200V Fast Switching MOSFETs Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Voltage 10 VGS Gate to Source Voltage (V) ID=9A IS Source Current(A) 8 6 TJ=150℃ 4 TJ=25℃ 2 0 0.00 0.25 0.50 0.75 1.00 QG , Total Gate Charge (nC) VSD , Source-to-Drain Voltage (V) Fig.4 Gate-Charge Characteristics Fig.3 Forward Characteristics Of Reverse diode Normalized VGS(th) (V) 1.8 1.4 1 0.6 0.2 -50 0 50 100 150 TJ ,Junction Temperature (℃ ) Fig.6 Normalized RDSON vs. TJ Fig.5 Normalized VGS(th) vs. TJ www.hs-semi.cn Ver 2.0 3 HSH18N20 N-Ch 200V Fast Switching MOSFETs F=1.0MHz 100us Capacitance (pF) Ciss 1m ID (A) 10m 100 D Cos Crs TC=25℃ Single Pulse VDS (V) VDS , Drain to Source Voltage (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 P DM 0.01 T ON T SINGLE D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% 1 L x IAS2 x 2 BVDSS BVDSS-VDD BVDSS VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff VGS Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform www.hs-semi.cn Ver 2.0 4 HSH18N20 N-Ch 200V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 5