AP15P06D
-60V P-Channel Enhancement Mode MOSFET
Description
The AP15P06D uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = -60V ID =-18.8A
RDS(ON) < 70mΩ @ VGS=10V (Type:53mΩ)
Application
Brushless motor
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP15P06D
TO-252-3
AP15P06D XXXX YYYY
2500
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-60
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ -10V1
-18.8
A
ID@TC=100℃
Continuous Drain Current, VGS @ -10V1
-11
A
ID@TA=25℃
Continuous Drain Current, VGS @ -10V1
-4.3
A
ID@TA=70℃
Continuous Drain Current, VGS @ -10V1
-3.5
A
-36
A
IDM
EAS
Pulsed Drain
Current2
Single Pulse Avalanche
Energy3
mJ
Avalanche Current
-26.6
A
PD@TC=25℃
Total Power Dissipation4
34.7
W
PD@TA=25℃
Total Power Dissipation4
2
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
62
℃/W
3.6
℃/W
RθJA
Thermal Resistance Junction-Ambient
RθJC
Junction-Case1
AP15P06D RVE4.0
Thermal Resistance
1
永源微電子科技有限公司
1
35.4
IAS
AP15P06D
-60V P-Channel Enhancement Mode MOSFET
Electrical Characteristics (TA=25℃unless otherwise noted)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-60
---
---
V
△BVDSS /△Tj
BVDSS Temperature Coefficient
Reference to 25℃ , ID=-1mA
---
-0.03
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V , ID=-12A
---
53
70
VGS=-4.5V , ID=-8A
---
64
105
VGS(th)
Gate Threshold Voltage
-1.2
-1.5
-2.5
V
△VGS(th)
VGS(th) Temperature Coefficient
---
4.56
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=-48V , VGS=0V , TJ=25℃
---
---
1
VDS=-48V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-12A
---
15.4
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
13.5
---
Ω
Qg
Total Gate Charge (-4.5V)
---
9.86
---
Qgs
Gate-Source Charge
---
3.08
---
Qgd
Gate-Drain Charge
---
2.95
---
Td(on)
Turn-On Delay Time
---
28.8
---
---
19.8
---
---
60.8
---
VGS=VDS , ID =-250uA
VDS=-48V , VGS=-4.5V , ID=-10A
VDD=-15V , VGS=-10V ,
RG=3.3 ,
ID=-1A
mΩ
uA
nC
Tr
Rise Time
Td(off)
Turn-Off Delay Time
Tf
Fall Time
---
7.2
---
Ciss
Input Capacitance
---
1447
---
Coss
Output Capacitance
---
97.3
---
Crss
Reverse Transfer Capacitance
---
70
---
---
---
-18
A
---
---
-36
A
IS
ISM
Continuous Source
Pulsed Source
Current1,5
Current2,5
VDS=-15V , VGS=0V , f=1MHz
VG=VD=0V , Force Current
ns
pF
Voltage2
VSD
Diode Forward
VGS=0V , IS=-1A , TJ=25℃
-----1.2
V
Note :
1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3、The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-26.6A
4、The power dissipation is limited by 150℃ junction temperature
5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
AP15P06D RVE4.0
永源微電子科技有限公司
AP15P06D
-60V P-Channel Enhancement Mode MOSFET
Typical Characteristics
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
2.5
1.5
2.0
1
1.5
0.5
1.0
0.5
0
-50
0
50
o 100
TJ ,Junction Temperature ( C)
AP15P06D RVE4.0
-50
0
50
100
150
TJ , Junction Temperature ( )
Fig.6 Normalized RDSON v.s TJ
永源微電子科技有限公司
3
Fig.5 Normalized VGS(th) v.s TJ
150
AP15P06D
-60V P-Channel Enhancement Mode MOSFET
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
4
AP15P06D RVE4.0
永源微電子科技有限公司
AP15P06D
-60V P-Channel Enhancement Mode MOSFET
Package Mechanical Data
E
Dimensions
A
B2
Ref.
C2
H
D
L
V1
C
B
DETAIL A
V1
V2
A2
V1
E1
Typ.
Min.
Typ.
Max.
A
2.10
2.50
0.083
0.098
0
0.10
0
0.004
B
0.66
0.86
0.026
0.034
B2
5.18
5.48
0.202
0.216
C
0.40
0.60
0.016
0.024
C2
0.44
0.58
0.017
0.023
D
5.90
6.30
0.232
5.30REF
E
6.40
E1
4.63
0.248
0.209REF
6.80
0.252
0.268
0.182
G
4.47
4.67
0.176
0.184
H
9.50
10.70
0.374
0.421
L
1.09
1.21
0.043
0.048
L2
1.35
1.65
0.053
0.065
7°
V1
L2
Inches
Max.
A2
D1
G
D1
Millimeters
Min.
V2
0°
7°
6°
0°
6°
DETAIL A
TO-252
Reel Spectification-TO-252
B
D
0
P0
P2
Dimensions
T
E
Ref.
A
B0
A
D1
W
F
t1
K0
P1
A0
B
B B
5°
Φ3
29
A A
20
Φ13
Millimeters
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
W
15.90
16.00
16.10
0.626
0.630
0.634
E
1.65
1.75
1.85
0.065
0.069
0.073
F
7.40
7.50
7.60
0.291
0.295
0.299
D0
1.40
1.50
1.60
0.055
0.059
0.063
D1
1.40
1.50
1.60
0.055
0.059
0.063
P0
3.90
4.00
4.10
0.154
0.157
0.161
P1
7.90
8.00
8.10
0.311
0.315
0.319
P2
1.90
2.00
2.10
0.075
0.079
0.083
A0
6.85
6.90
7.00
0.270
0.271
0.276
B0
10.45
10.50
10.60
0.411
0.413
0.417
K0
2.68
2.78
2.88
0.105
0.109
0.113
T
0.24
t1
0.10
10P0
39.80
0.27
0.009
0.011
0.004
40.00
40.20
1.567
1.575
1.583
5
AP15P06D RVE4.0
永源微電子科技有限公司
AP15P06D
-60V P-Channel Enhancement Mode MOSFET
Attention
1,Any and all APM Microelectronics products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your APM Microelectronics representative nearest
you before using any APM Microelectronics products described or contained herein in such applications.
2,APM Microelectronics assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all APM Microelectronics
products described or contained herein.
3, Specifications of any and all APM Microelectronics products described or contained here instipulate the
performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted
in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer’s
products or equipment.
4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products.
However, any and all semiconductor products fail with some probability. It is possible that these
probabilistic failures could give rise to accidents or events that could endanger human lives that could
give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include
but are not limited to protective circuits and error prevention circuits for safe design, redundant
design,and structural design.
5,In the event that any or all APM Microelectronics products(including technical data, services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.
7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. APM Microelectronics believes information herein is accurate and
reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual
property rights or other rights of third parties.
8, Any and all information described or contained herein are subject to change without notice due to
product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for
the APM Microelectronics product that you Intend to use.
6
AP15P06D RVE4.0
永源微電子科技有限公司
AP15P06D
-60V P-Channel Enhancement Mode MOSFET
Edition
Date
Change
Rve3.8
2018/1/31
Initial release
Rve3.9
2018/5/25
Reduce CiSS and QG
Rve4.0
2021/4/13
Change layout format
Copyright Attribution“APM-Microelectronice”
7
AP15P06D RVE4.0
永源微電子科技有限公司