HY3215B

HY3215P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Pin Description Features • 150V/120A RDS(ON) = 12 m(typ.) @ VGS=10V • 100% avalanche tested G • Reliable and Rugged • Lead Free and Green Devices Available G D D G S D S S TO-220FB-3L TO-220FB-3S TO-263-2L (RoHS Compliant) G G Applications D TO-3PS-3L  Switching application  Power Management for Inverter Systems. Ordering and Marking Information D S S TO-3PM-3S N-Channel MOSFET Package Code P HY3215 M HY3215 B HY3215 YYXXXJWW G YYXXXJWW G YYXXXJWW G PS HY3215 PM HY3215 YYXXXJWW G YYXXXJWW G P : TO-220FB-3L B: TO-263-2L PM: TO-3PM-3S Date Code YYXXX WW M : TO-220FB-3S PS: TO-3PS-3L Assembly Material G : Lead Free Device Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the leadFree requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr-oduct and/or to this document at any time without notice. www.hymexa.com 1 V1.0 HY3215P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 150 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 TJ TSTG IS Storage Temperature Range V °C -55 to 175 Diode Continuous Forward Current °C TC=25°C 120 A TC=25°C 480** A TC=25°C 120 TC=100°C 84 TC=25°C 300 TC=100°C 150 Mounted on Large Heat Sink IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case 0.5 RJA Thermal Resistance-Junction to Ambient 62.5 A W °C/W Avalanche Ratings EAS Avalanche Energy, Single Pulsed L=0.5mH 1025*** mJ Note： * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=100V Electrical Characteristics Symbol Parameter (TC = 25C Unless Otherwise Noted) Test Conditions HY3215 Min. Typ. Max. VGS=0V, IDS=250A 150 - - VDS=150V, VGS=0V - - 1 - - 10 Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON)* TJ=85°C V A Gate Threshold Voltage VDS=VGS, IDS=250A 3.0 4.0 5.0 V Gate Leakage Current VGS=±25V, VDS=0V - - ±100 nA Drain-Source On-state Resistance VGS=10V, IDS=60A - 12 15 m ISD=60A, VGS=0V - 0.8 1 V - 46 - ns - 98 - nC Diode Characteristics VSD * Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge www.hymexa.com ISD=60A, dlSD/dt=100A/s 2 V1.0 HY3215P/M/B/PS/PM Electrical Characteristics (Cont.) Symbol Parameter (TC = 25C Unless Otherwise Noted) Test Conditions HY3215 Min. Typ. Max. - 3.2 - - 5785 - - 548 - - 321 - - 26 - - 39 - - 77 - - 58 - - 137 - - 28 - - 46 - Unit Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=25V, Frequency=1.0MHz VDD=75V, RG= 3 , IDS =60A, VGS=10V, Turn-off Fall Time  pF ns Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=120 V, VGS=10V, IDS=60A nC Note * : Pulse test ; pulse width 300s, duty cycle2%. . www.hymexa.com 3 V1.0 HY3215P/M/B/PS/PM Typical Operating Characteristics Power Dissipation Drain Current 350 135 120 ID - Drain Current (A) Ptot - Power (W) 300 250 200 150 100 50 limited by package 105 90 75 60 45 30 15 o 0 TC=25 C 0 20 40 o 60 0 80 100 120 140 160 180 200 TC=25 C,VG=10V 0 20 40 60 80 100 120 140 160 180 200 Tc - Case Temperature (°C) Tc - Case Temperature (°C) Safe Operation Area ID - Drain Current (A) 600 100us Rd s(o n) Lim it 100 1ms 10 10ms DC 1 o TC=25 C 0.1 0.01 0.1 1 10 100 500 VDS - Drain - Source Voltage (V) Thermal Transient Impedance Normalized Effective Transient 1 Duty = 0.5 0.1 0.2 0.1 0.01 0.05 0.02 0.001 0.01 Mounted on minimum pad o RJA : 62.5 C/W Single 0.0001 0.0001 0.001 0.1 0.01 1 10 S uare Wave Pulse Duration sec www.hymexa.com 4 V1.0 HY3215P/M/B/PS/PM Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 160 15 ID - Drain Current (A) 120 RDS(ON) - On - Resistance (m) VGS= 7,8,9,10,15V 140 6.5V 100 6V 80 60 5V 40 20 0 14 VGS =10V 13 12 11 10 0 1 2 3 4 5 0 6 30 60 ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage 1.6 Normalized Threshold Vlotage 15 14 13 12 11 10 5 6 7 8 9 VGS - Gate - Source Voltage (V) www.hymexa.com 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 10 150 IDS =250A IDS=60A RDS(ON) - On - Resistance (m) 120 VDS - Drain-Source Voltage (V) 16 4 90 0 25 50 75 100 125 150 175 Tj - Junction Temperature (°C) 5 V1.0 HY3215P/M/B/PS/PM Typical Operating Characteristics (Cont.) Source-Drain Diode Forward Drain-Source On Resistance 160 2.4 VGS = 10V 2.2 100 IDS = 60A 1.8 IS - Source Current (A) Normalized On Resistance 2.0 1.6 1.4 1.2 1.0 0.8 o Tj=175 C 10 o Tj=25 C 1 0.6 0.4 o 0.2 -50 -25 RON@Tj=25 C: 12 m 0 25 50 0.1 0.0 75 100 125 150 175 0.6 0.8 1.0 1.2 VSD - Source-Drain Voltage (V) Capacitance Gate Charge 1.4 10 Frequency=1MHz 10000 VDS= 120V 9 VGS - Gate-source Voltage (V) 9000 C - Capacitance (pF) 0.4 Tj - Junction Temperature (°C) 11000 8000 Ciss 7000 6000 5000 4000 3000 2000 1000 0 0.2 Coss Crss 0 5 10 15 20 8 7 6 5 4 3 2 1 25 30 35 0 40 VDS - Drain - Source Voltage (V) www.hymexa.com IDS= 60A 0 20 40 60 80 100 120 140 160 QG - Gate Charge (nC) 6 V1.0 HY3215P/M/B/PS/PM Avalanche Test Circuit Switching Time Test Circuit Gate Charge Test Circuit www.hymexa.com 7 V1.0 HY3215P/M/B/PS/PM Device Per Unit Package Type Unit Quantity TO-220FB-3L Tube 50 Package Information TO-220FB-3L COMMON DIMENSIONS SYMBOL www.hymexa.com mm MIN NOM MAX A 4.37 4.57 4.77 A1 1.25 1.30 1.45 A2 2.20 2.40 2.60 b 0.70 0.80 0.95 b2 1.17 1.27 1.47 c 0.40 0.50 0.65 D 15.10 15.60 16.10 D1 8.80 9.10 9.40 D2 5.50 - - E 9.70 10.00 10.30 E3 7.00 - - e 2.54 BSC e1 5.08 BSC H1 6.25 6.50 6.85 L 12.75 13.50 13.80 L1 - 3.10 3.40 ĭP 3.40 3.60 3.80 Q 2.60 2.80 3.00 8 V1.0 HY3215P/M/B/PS/PM Device Per Unit Package Type Unit Quantity TO-220FB-3S Tube 50 Package Information TO-220FB-3S COMMON DIMENSIONS SYMBOL www.hymexa.com mm MIN NOM MAX A 4.37 4.57 4.77 A1 1.25 1.30 1.45 A2 2.20 2.40 2.60 b 0.70 0.80 0.95 b2 1.17 1.27 1.47 c 0.40 0.50 0.65 D 15.10 15.60 16.10 D1 8.10 9.10 9.40 D2 5.50 - - E 9.70 10.00 10.30 E3 7.00 - - e 2.54 BSC e1 5.08 BSC H1 6.25 6.50 6.85 L 6.80 7.00 7.20 L1 - 3.10 3.40 ĭP 3.40 3.60 3.80 Q 2.60 2.80 3.00 9 V1.0 HY3215P/M/B/PS/PM Device Per Unit Package Type Unit Quantity TO-263-2L Reel 50 Package Information TO-263-2L COMMON DIMENSIONS SYMBOL mm MIN NOM MAX A 4.37 4.57 4.77 A1 1.22 1.27 1.42 A2 2.49 2.69 2.89 A3 0 0.13 0.25 b 0.7 0.81 0.96 b1 1.17 1.27 1.47 c 0.3 0.38 0.53 D1 8.5 8.7 8.9 D4 6.6 - - E 9.86 10.16 10.36 E5 7.06 - - e 2.54 BSC H 14.7 15.1 15.5 H2 1.07 1.27 1.47 L 2 2.3 2.6 L1 1.4 1.55 1.7 L4 ș www.hymexa.com 0.25 BSC 0° 10 5° 9° V1.0 HY3215P/M/B/PS/PM Device Per Unit Package Type Unit Quantity TO-3PS-3L Tube 50 Package Information TO-3PS-3L COMMON DIMENSIONS SYMBOL mm MIN NOM MAX A 3.36 3.56 3.76 A1 1.25 1.30 1.40 A2 1.39 1.54 1.69 b 0.75 0.80 0.90 b2 1.17 1.27 1.42 c 0.45 0.50 0.60 D 15.45 15.70 15.95 D1 9.00 9.20 9.40 E 9.88 10.00 10.20 e 2.54 L 13.20 13.40 13.60 L1 - 3.00 3.30 ĭP1 Q www.hymexa.com BSC 3.20 3.88 11 REF 4.00 4.12 V1.0 HY3215P/M/B/PS/PM Device Per Unit Package Type Unit Quantity TO-3PM-3S Tube 50 Package Information TO-3PM-3S www.hymexa.com 12 V1.0 HY3215P/M/B/PS/PM Classification Profile Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 qC 150 qC 60-120 seconds 150 qC 200 qC 60-120 seconds 3 qC/second max. 3qC/second max. 183 qC 60-150 seconds 217 qC 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5qC of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 qC/second max. 6 qC/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak (Tp)* package body Temperature Time 25qC to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. www.hymexa.com 13 V1.0 HY3215P/M/B/PS/PM Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 3 Package Thickness