RS3M

www.msksemi.com RS3A THRU RS3M Semiconductor Compiance Features


For surface mounted application Glass passivated junction chip Built-in strain relief, ideal for automated placement Plastic material used carries Underwriters Laboratory Classification 94V-O Fast switching for high efficiency High temperature soldering: O 260 C /10 seconds at terminals


Mechanical Data

SMB Cases: Molded plastic Terminals: Solder plated Polarity: Indicated by cathode band Packing: 16mm tape per E1A STD RS-481 Weight: 0.09 gram


Maximum Ratings and Electrical Characteristics Rating at 25℃ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current See Fig. 1 @TL=75OC Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 3.0A Maximum DC Reverse Current @ TA =25℃ at Rated DC Blocking Voltage @ TA=125℃ Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Symbol RS 3A RS 3B VRRM VRMS VDC 50 100 35 70 50 100 200 RS 3G RS 3J RS 3K RS 3M Units 200 400 600 800 1000 V 140 280 420 560 700 V 400 600 800 1000 V I(AV) 3.0 A IFSM 100 A VF 1.3 V IR 10 250 60 50.0 15.0 uA uA nS pF ℃/W ℃/W -55 to +150 -55 to +150 ℃ ℃ Trr Cj Typical Thermal Resistance (Note 3) RθJA Operating Temperature Range RθJL TJ TSTG Storage Temperature Range RS 3D 150 250 500 Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied VR=4.0 Volts 3. Thermal Resistance from Junction to Ambient and from Junction to Lead Mounted on P.C.B. with 0.6”x0.6” ( 16 x 16 mm ) Copper Pad Areas. www.msksemi.com RS3A THRU RS3M Semiconductor FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 150 PEAK FORWARD SURGE CURRENT. (A) AVERAGE FORWARD CURRENT. (A) 3.0 RESISTIVE OR INDUCTIVE LOAD 2.5 2.0 1.0 P.C.B. MOUNTED 0.6 X 0.6" (16X16mm) COPPER PAD AREAS 0 0 50 100 75 50 25 0 150 100 Tj=Tj max. 8.3ms Single Half Sine Wave JEDEC Method 125 200 1 10 o LEAD TEMPERATURE. ( C) FIG.4- TYPICAL REVERSE CHARACTERISTICS 100 100 INSTANTANEOUS REVERSE CURRENT. ( A) Tj=125 0C 10 Tj=25 0C Pulse Width=300 s 1% Duty Cycle 1 0.1 0.4 100 NUMBER OF CYCLES AT 60Hz FIG.3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT. (A) Compiance Tj=-40 0C 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Tj=125 0C 10 Tj=75 0C 1 Tj=25 0C 0.1 0.01 0 FORWARD VOLTAGE. (V) 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FIG.5- TYPICAL JUNCTION CAPACITANCE 100 JUNCTION CAPACITANCE.(pF) Tj=25 0C f=1.0MHz Vsig=50mVp-p 10 1 10 100 REVERSE VOLTAGE. (V) www.msksemi.com RS3A THRU RS3M Semiconductor Compiance PACKAGE MECHANICAL DATA A Dimensions B C Ref. H F G D E L J K Millimeters Min. Max. Min. Max. A 4.25 4.75 0.167 0.187 B 3.30 3.94 0.130 0.155 C 1.85 2.21 0.073 0.087 D 0.76 1.52 0.030 0.060 E 5.08 5.59 0.200 0.220 F 0.051 0.203 0.002 0.008 G 0.15 0.31 0.006 0.012 H 2.11 2.44 0.083 0.096 J 6.80 L 0.270 2.60 K DO-214AA (SMB) Inches 2.40 0.100 0.090 REEL SPECIFICATION P/N RS3A THRU RS3M PKG QTY SMB 3000 www.msksemi.com RS3A THRU RS3M Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your MSKSEMI Semiconductor representative nearest you before using any MSKSEMI Semiconductor products described or contained herein in such applications. ■ MSKSEMI Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described orcontained herein. ■ Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’sproducts orequipment. ■ MSKSEMI Semiconductor. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with someprobability. It is possiblethat these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits anderror prevention circuitsfor safedesign, redundant design, and structural design. ■ In the event that any or all MSKSEMI Semiconductor products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from theauthorities concerned in accordance with the above law. ■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of MSKSEMI Semiconductor. ■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. MSKSEMI Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. Whendesigning equipment, referto the "Delivery Specification" for the MSKSEMI Semiconductor productthat you intend to use. www.msksemi.com