MSCSM120HM31CTBL2NG
Full Bridge SiC MOSFET Power Module
Product Overview
The MSCSM120HM31CTBL2NG device is a full bridge 1200 V/79 A silicon carbide (SiC) MOSFET power module.
+VBUS2
G3 S3
0/VBUS2
S4
G4
OUT2
T2
T1
+VBUS1
G1 S1
0/VBUS1
S2 G2
OUT1
All ratings at TJ = 25 °C, unless otherwise specified.
Caution: These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed.
© 2021 Microchip Technology Inc.
and its subsidiaries
Datasheet
DS00004080A-page 1
MSCSM120HM31CTBL2NG
Features
The following are the key features of MSCSM120HM31CTBL2NG device:
•
SiC Power MOSFET
– Low RDS(on)
– High speed switching
•
SiC Schottky Diode
– Zero reverse recovery
– Zero forward recovery
– Temperature independent switching behavior
– Positive temperature coefficient on VF
•
•
•
•
•
•
Very low stray inductance
Ultra-low weight and profile
Kelvin source for easy drive
Si3N4 substrate with thick copper for improved thermal performance
Internal thermistor for temperature monitoring
Extended temperature range
Benefits
The following are the benefits of MSCSM120HM31CTBL2NG device:
•
•
•
•
•
•
•
•
High efficiency converter
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
Low profile
RoHS compliant
Solderable terminals both for power and signal for easy PCB mounting
Very integrated power conversion system
Application
The following are the applications of MSCSM120HM31CTBL2NG device:
•
•
•
High reliability power systems
High Efficiency AC/DC and DC/AC converters
Motor control
© 2021 Microchip Technology Inc.
and its subsidiaries
Datasheet
DS00004080A-page 2
MSCSM120HM31CTBL2NG
Electrical Specifications
1.
Electrical Specifications
This section provides the electrical specifications of the MSCSM120HM31CTBL2NG device.
1.1
SiC MOSFET Characteristics (Per SiC MOSFET)
The following table lists the absolute maximum ratings of MSCSM120HM31CTBL2NG device.
Table 1-1. Absolute Maximum Ratings
Symbol
Parameter
Maximum Ratings
Unit
VDSS
Drain-Source voltage
1200
V
ID
Continuous drain current
TH = 25 °C
79
A
TH = 80 °C
63
IDM
Pulsed drain current
160
VGS
Gate-Source voltage
–10/25
V
RDS(on)
Drain-Source ON resistance
31
mΩ
PD
Power dissipation
310
W
TH = 25 °C
The following table lists the electrical characteristics of MSCSM120HM31CTBL2NG device.
Table 1-2. Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
IDSS
Zero gate voltage
drain current
VGS = 0 V; VDS = 1200 V
—
10
100
µA
RDS(on)
Drain–Source on
resistance
VGS = 20 V
TJ = 25 °C
—
25
31
mΩ
ID = 40 A
TJ = 175 °C
—
40
—
VGS(th)
Gate threshold
voltage
VGS = VDS; ID = 1 mA
1.8
2.8
—
V
IGSS
Gate–Source
leakage current
VGS = 20 V; VDS = 0 V
—
—
150
nA
© 2021 Microchip Technology Inc.
and its subsidiaries
Datasheet
DS00004080A-page 3
MSCSM120HM31CTBL2NG
Electrical Specifications
The following table lists the dynamic characteristics of MSCSM120HM31CTBL2NG device.
Table 1-3. Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input capacitance
VGS = 0 V
—
3020
—
pF
Coss
Output capacitance
VDS = 1000 V
—
270
—
Crss
Reverse transfer
capacitance
f = 1 MHz
—
25
—
Qg
Total gate charge
VGS = –5 V/20 V
—
232
—
Qgs
Gate-Source charge
VBus = 800 V
—
41
—
Qgd
Gate-Drain charge
ID = 40 A
—
50
—
Td(on)
Turn-on delay time
VGS = –5 V/20 V
—
30
—
Tr
Rise time
VBus = 600 V
—
30
—
Turn-off delay time
ID = 50 A
—
50
—
Tf
Fall time
RGon = 8 Ω; RGoff = 4.7 Ω
25
—
Eon
Turn-on energy
VGS = –5 V/20 V
TJ = 150 °C
—
0.99
—
Eoff
Turn-off energy
VBus = 600 V
TJ = 150 °C
—
0.66
—
—
0.88
—
Ω
—
0.483
—
°C/W
Td(off)
nC
ns
mJ
ID = 50 A
RGon = 8 Ω
RGoff = 4.7 Ω
RGint
Internal gate resistance
RthJH
Junction-to-heatsink thermal resistance
λ = 3.4 W/mK
The following table lists the body diode ratings and characteristics of MSCSM120HM31CTBL2NG device.
Table 1-4. Body Diode Ratings and Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VSD
Diode forward voltage
VGS = 0 V; ISD = 40 A
—
4
—
V
VGS = –5 V; ISD = 40 A
—
4.2
—
trr
Reverse recovery time
ISD = 40 A; VGS = –5 V
—
90
—
ns
Qrr
Reverse recovery charge
VR = 800 V; diF/dt = 1000 A/µs
—
550
—
nC
Irr
Reverse recovery current
—
13.5
—
A
© 2021 Microchip Technology Inc.
and its subsidiaries
Datasheet
DS00004080A-page 4
MSCSM120HM31CTBL2NG
Electrical Specifications
1.2
SiC Diode Ratings and Characteristics (Per SiC Diode)
The following table lists the SiC diode ratings and characteristics of MSCSM120HM31CTBL2NG device.
Table 1-5. SiC Diode Ratings and Characteristics (Per SiC Diode)
Symbol Characteristic
VRRM
Peak repetitive reverse voltage
IRM
Reverse leakage
current
VR = 1200 V
Min
Typ
Max
Unit
—
—
1200
V
TJ = 25 °C
—
10
200
μA
TJ = 175 °C
—
150
—
TH = 100 °C
—
30
—
A
TJ = 25 °C
—
1.5
1.8
V
TJ = 175 °C
—
2.1
—
IF
DC forward current
VF
Diode forward
voltage
IF = 30 A
QC
Total capacitive
charge
VR = 600 V
—
130
—
nC
C
Total capacitance
f = 1 MHz, VR = 400 V
—
141
—
pF
f = 1 MHz, VR = 800 V
—
105
—
—
0.854
—
RthJH
1.3
Test Conditions
Junction-to-heatsink thermal
resistance
λpaste = 3.4 W/mK
°C/W
Thermal and Package Characteristics
The following table lists the thermal and package characteristics of MSCSM120HM31CTBL2NG device.
Table 1-6. Thermal and Package Characteristics
Symbol
Characteristic
Min
Typ
Max
Unit
VISOL
RMS isolation voltage, any terminal to case t = 1 min,
50 Hz/60 Hz
2500
—
—
V
TJ
Operating junction temperature range
–55
—
175
°C
TJOP
Recommended junction temperature under switching
conditions
–55
—
TJmax–25
TSTG
Storage case temperature
–55
—
125
TC
Operating case temperature
–55
—
125
Torque
Mounting torque
1.5
—
2
N.m
Wt
Package weight
—
21.5
—
g
© 2021 Microchip Technology Inc.
and its subsidiaries
To heatsink
M4
Datasheet
DS00004080A-page 5
MSCSM120HM31CTBL2NG
Electrical Specifications
The following table lists the temperature sensor NTC of MSCSM120HM31CTBL2NG device.
Table 1-7. Temperature Sensor NTC
Symbol
Characteristic
Min
Typ
Max
Unit
R25
Resistance at 25°C
—
—
50
—
kΩ
ΔR25/R25
—
—
—
5
—
%
B25/85
T25 = 298.15 K
—
—
3952
—
K
ΔB/B
—
TC = 100°C
—
4
—
%
Note: See APT0406—Using NTC Temperature Sensor Integrated into Power Module for more information.
Typical SiC MOSFET Performance Curve
This section shows the typical SiC MOSFET performance curves of MSCSM120HM31CTBL2NG device.
Figure 1-1. Junction-to-Heatsink Thermal Impedance
ZTHJH (°C/W)
1
0.1
0.01
0.001
1
2
3
4
5
6
7
Ri (°C/W)
0.013
0.080
0.028
0.058
0.012
0.242
0.050
taui (s)
0.011
0.004
0.018
0.052
0.042
0.066
0.112
0.01
0.1
1
time (s)
Figure 1-2. Output Characteristics, TJ = 25 °C
Figure 1-3. Output Characteristics,
TJ = 175 °C
p
100
100
IDS, Drain Source Current (A)
VGS=20V
IDS, Drain Source Current (A)
1.4
75
VGS=20V
VGS=18V
50
25
TJ=25°C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
75
VGS=18V
50
25
3.5
and its subsidiaries
0
1
2
3
4
5
VDS, Drain Source Voltage (V)
VDS, Drain Source Voltage (V)
© 2021 Microchip Technology Inc.
TJ=175°C
0
Datasheet
DS00004080A-page 6
MSCSM120HM31CTBL2NG
Electrical Specifications
Figure 1-5. Transfer Characteristics
100
1.6
VGS=20V
ID=50A
1.4
1.2
1
0.8
25
50
75
100
125
175
150
IDS, Drain Source Current (A)
RDSon , Drain Source ON resistance
Figure 1-4. Normalized RDS(on) vs. Temperature
75
TJ=175°C
50
25
TJ=25°C
0
2
TJ, Junction Temperature (°C)
Figure 1-6. Switching Energy
Rg
g vs. gy
1.50
Losses (mJ)
Losses (mJ)
1.00
Eoff
VGS=-5/20V
ID= 50A
VBUS = 600V
TJ = 150°C
10
12
14
VGS=-5/20V
RGon=8Ω
RGoff=4.7Ω
VBUS= 600V
TJ = 150°C
16
18
Eon
1.0
0.5
0.0
0
20
25
50
75
100
Current (A)
Gate resistance (Ω)
Figure 1-8. Capacitance vs. Drain Source Voltage
Figure 1-9. Gate Charge vs. Gate Source Voltage
20
Ciss
1000
Coss
100
Crss
10
0
200
400
600
800
1000
VGS, Gate to Source Voltage (V)
10000
C, Capacitance (pF)
12
Eoff
0.50
8
10
2.0
Eon
6
8
Figure 1-7. Switching Energy
vs.
g
gyCurrent
g
1.5
4
6
VGS, Gate Source Voltage (V)
1.25
0.75
4
15
10
5
0
-5
0
VDS, Drain source Voltage (V)
© 2021 Microchip Technology Inc.
and its subsidiaries
TJ = 25°C
ID = 40A
VDS = 800V
50
100
150
200
250
Gate Charge (nC)
Datasheet
DS00004080A-page 7
MSCSM120HM31CTBL2NG
Electrical Specifications
Figure 1-10. Body Diode Characteristics, TJ = 25 °C
Figure 1-11. 3rd Quadrant Characteristics, TJ = 25 °C
-5
-5 -4.5 -4 -3.5 -3 -2.5 -2 -1.5 -1
-4
-3
-2
-1
0
0
VGS=-5V
-20
VGS=0V
-40
VGS=-2V
-60
-80
TJ=25°C
IDS, Drain source current (A)
IDS, Drain source current (A)
0
-20
VGS=0V
-40
-60
-80
VGS=20V
VGS=18V
-100
TJ=25°C
-100
VDS, Drain source voltage (V)
VDS, Drain source voltage (V)
Figure 1-12. Body Diode Characteristics, TJ = 175 °C Figure 1-13. 3rd Quadrant Characteristics, TJ = 175 °C
-4.5
-4
-3.5
-3
-2.5
-2
-1.5
-1
-5
-4
-3
-2
-1
0
0
VGS=-5V
-20
VGS=-2V
-40
VGS=0V
-60
-80
TJ=175°C
I DS, Drain source current (A)
IDS, Drain source current (A)
0
-100
TJ=175°C
-20
VGS=0V
-40
VGS=18V
-60
-80
VGS=20V
-100
VDS, Drain source voltage (V)
VDS, Drain source voltage (V)
Figure 1-14. Operating Frequency vs. Drain Current
200
VBUS=600V
D=50%
RGon=8Ω
RGoff=4.7Ω
TJ=150°C
TH=75°C
175
Frequency (kHz)
150
125
100
Hard
switching
75
50
25
0
10
20
30
40
50
60
70
ID , Drain Current (A)
© 2021 Microchip Technology Inc.
and its subsidiaries
Datasheet
DS00004080A-page 8
MSCSM120HM31CTBL2NG
Electrical Specifications
1.5
Typical SiC Diode Performance Curves
This section shows the typical SiC diode performance curves of MSCSM120HM31CTBL2NG device.
Figure 1-15. Junction-to-Heatsink Thermal Impedance
ZTHJH (°C/W)
1
0.1
0.001
1
2
3
4
5
6
7
Ri (°C/W)
0.033
0.200
0.066
0.122
0.023
0.345
0.065
taui (s)
0.011
0.002
0.011
0.034
0.030
0.059
0.117
0.01
0.1
1
time (s)
Figure 1-16. Forward Characteristics
Figure 1-17. Capacitance vs. Reverse Voltage
2
50
40
C, Capacitance (nF)
IF Forward Current (A)
60
TJ=25°C
30
TJ=175°C
20
10
1.5
1
0.5
0
0
0.5
1
1.5
2
2.5
3
0
3.5
0.1
and its subsidiaries
10
100
1000
VR Reverse Voltage
VF Forward Voltage (V)
© 2021 Microchip Technology Inc.
1
Datasheet
DS00004080A-page 9
MSCSM120HM31CTBL2NG
Package Specifications
2.
Package Specifications
The following section shows the package specification of MSCSM120HM31CTBL2NG device.
Package Outline
The following figure shows the package outline drawing of MSCSM120HM31CTBL2NG device. The dimensions in
the following figure are in millimeters.
Figure 2-1. Package Outline Drawing
6,1 ±0,3
1 ±0,3
12°
1,5 ±0,5
A
6x
A
8 :1
4,4 ±0,2
13,4 ±0,5
8,8 ±0,5
17,7 ±0,5
17,3 ±0,5
2,54 ±0,25
10,5 ±0,5
2,54 ±0,25
0
0,3 ±0,5
10,5 ±0,5
17,3 ±0,5
43,6 ±1
4 X 9,3 ±0,5
14,1 ±0,5
1 ±0,1
0,5 ±0,1
6,1 ±0,3
7,8 ±0,5
0,8 ±0,1
2,54 ±0,15
0
9,5 ±0,2
3,8 ±0,5
35,7 ±1
2.1
7,62 ±0,25
8 ±0,5
13,4 ±0,5
2,54
13 ±0,5
© 2021 Microchip Technology Inc.
and its subsidiaries
Datasheet
2 ±0,3
3,8 ±0,5
8,2 ±0,5
DS00004080A-page 10
MSCSM120HM31CTBL2NG
Revision History
3.
Revision History
Revision
Date
Description
A
07/2021
Initial revision
© 2021 Microchip Technology Inc.
and its subsidiaries
Datasheet
DS00004080A-page 11
MSCSM120HM31CTBL2NG
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Datasheet
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MSCSM120HM31CTBL2NG
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ISBN: 978-1-5224-8448-6
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Datasheet
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MSCSM120HM31CTBL2NG
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Datasheet
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China - Chengdu
Tel: 86-28-8665-5511
China - Chongqing
Tel: 86-23-8980-9588
China - Dongguan
Tel: 86-769-8702-9880
China - Guangzhou
Tel: 86-20-8755-8029
China - Hangzhou
Tel: 86-571-8792-8115
China - Hong Kong SAR
Tel: 852-2943-5100
China - Nanjing
Tel: 86-25-8473-2460
China - Qingdao
Tel: 86-532-8502-7355
China - Shanghai
Tel: 86-21-3326-8000
China - Shenyang
Tel: 86-24-2334-2829
China - Shenzhen
Tel: 86-755-8864-2200
China - Suzhou
Tel: 86-186-6233-1526
China - Wuhan
Tel: 86-27-5980-5300
China - Xian
Tel: 86-29-8833-7252
China - Xiamen
Tel: 86-592-2388138
China - Zhuhai
Tel: 86-756-3210040
India - Bangalore
Tel: 91-80-3090-4444
India - New Delhi
Tel: 91-11-4160-8631
India - Pune
Tel: 91-20-4121-0141
Japan - Osaka
Tel: 81-6-6152-7160
Japan - Tokyo
Tel: 81-3-6880- 3770
Korea - Daegu
Tel: 82-53-744-4301
Korea - Seoul
Tel: 82-2-554-7200
Malaysia - Kuala Lumpur
Tel: 60-3-7651-7906
Malaysia - Penang
Tel: 60-4-227-8870
Philippines - Manila
Tel: 63-2-634-9065
Singapore
Tel: 65-6334-8870
Taiwan - Hsin Chu
Tel: 886-3-577-8366
Taiwan - Kaohsiung
Tel: 886-7-213-7830
Taiwan - Taipei
Tel: 886-2-2508-8600
Thailand - Bangkok
Tel: 66-2-694-1351
Vietnam - Ho Chi Minh
Tel: 84-28-5448-2100
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Denmark - Copenhagen
Tel: 45-4485-5910
Fax: 45-4485-2829
Finland - Espoo
Tel: 358-9-4520-820
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
Germany - Garching
Tel: 49-8931-9700
Germany - Haan
Tel: 49-2129-3766400
Germany - Heilbronn
Tel: 49-7131-72400
Germany - Karlsruhe
Tel: 49-721-625370
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Germany - Rosenheim
Tel: 49-8031-354-560
Israel - Ra’anana
Tel: 972-9-744-7705
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Italy - Padova
Tel: 39-049-7625286
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Norway - Trondheim
Tel: 47-72884388
Poland - Warsaw
Tel: 48-22-3325737
Romania - Bucharest
Tel: 40-21-407-87-50
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
Sweden - Gothenberg
Tel: 46-31-704-60-40
Sweden - Stockholm
Tel: 46-8-5090-4654
UK - Wokingham
Tel: 44-118-921-5800
Fax: 44-118-921-5820
© 2021 Microchip Technology Inc.
and its subsidiaries
Datasheet
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