MSCGLQ50DH120CTBL2NG
Asymmetrical Bridge High-Speed IGBT4 Power Module
Product Overview
The MSCGLQ50DH120CTBL2NG device is a 1200 V, 50 A asymmetrical bridge high-speed IGBT4 power module.
+VBUS2
0/VBUS2
E4
G4
OUT2
T2
T1
+VBUS1
G1 E1
0/VBUS1
OUT1
All ratings at TJ = 25°C, unless otherwise specified.
Caution: These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed.
© 2021 Microchip Technology Inc.
and its subsidiaries
Datasheet
DS00004102A-page 1
MSCGLQ50DH120CTBL2NG
Features
The following are the key features of MSCGLQ50DH120CTBL2NG device:
•
High speed IGBT4
– Low voltage drop
– Low leakage current
– Low switching losses
•
SiC Schottky Diode
– Zero reverse recovery
– Zero forward recovery
– Temperature independent switching behavior
– Positive temperature coefficient on VF
•
•
•
•
•
•
Very low stray inductance
Ultra low weight and profile
Kelvin source for easy drive
Si3N4 substrate with thick copper for improved thermal performance
Internal thermistor for temperature monitoring
Extended temperature range
Benefits
The following are the benefits of MSCGLQ50DH120CTBL2NG device:
•
•
•
•
•
•
•
•
High efficiency converter
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction-to-heatsink thermal resistance
Low profile
RoHS Compliant
Solderable terminals both for power and signal for easy PCB mounting
Very integrated power conversion system
Application
The following are the applications of MSCGLQ50DH120CTBL2NG device:
•
•
•
High reliability power systems
High Efficiency AC/DC and DC/AC converters
Motor control
© 2021 Microchip Technology Inc.
and its subsidiaries
Datasheet
DS00004102A-page 2
MSCGLQ50DH120CTBL2NG
Electrical Specifications
1.
Electrical Specifications
This section provides the electrical specifications of MSCGLQ50DH120CTBL2NG device.
1.1
IGBT4 Characteristics (Per IGBT)
The following table lists the absolute maximum ratings of MSCGLQ50DH120CTBL2NG device.
Table 1-1. Absolute Maximum Ratings
Symbol
Parameter
Maximum Ratings
Unit
VCES
Collector-Emitter voltage
1200
V
IC
Continuous collector current
TH = 25°C
110
A
TH = 100°C
50
TH = 25°C
180
ICM
Pulsed collector current
VGE
Gate-Emitter voltage
PD
Power dissipation
TH = 25 °C
±20
V
375
W
The following table lists the electrical characteristics of MSCGLQ50DH120CTBL2NG device.
Table 1-2. Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
ICES
Zero gate voltage
collector current
VGE = 0 V
VCE = 1200 V
—
—
25
µA
VCE(sat)
Collector emitter
saturation voltage
VGE = 15 V
TJ = 25°C
1.7
2.05
2.4
V
IC = 50 A
TJ = 150°C
—
2.6
—
VGE(th)
Gate threshold
voltage
VGE = VCE
IC = 1.7 mA
5.3
5.8
6.3
V
IGES
Gate-Emitter
leakage current
VGE = 20 V
VCE = 0 V
—
—
150
nA
© 2021 Microchip Technology Inc.
and its subsidiaries
Datasheet
DS00004102A-page 3
MSCGLQ50DH120CTBL2NG
Electrical Specifications
The following table lists the dynamic characteristics of MSCGLQ50DH120CTBL2NG device.
Table 1-3. Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input capacitance
VGE = 0 V
—
2770
—
pF
Coes
Output capacitance
VCE = 25 V
—
185
—
Cres
Reverse transfer
capacitance
f = 1 MHz
—
160
—
Qg
Total gate charge
VGE = 15 V
—
230
—
nC
—
30
—
ns
VCE = 960 V
IC = 50 A
Td(on)
Turn-on delay time
VGE = ±15 V
Tr
Rise time
VBus = 600 V
—
49
—
Turn-off delay time
IC = 50 A
—
366
—
Tf
Fall time
RG = 10 Ω
48
—
Eon
Turn-on switching
energy
VGE = ±15 V
Eoff
Turn-off switching
energy
Td(off)
TJ = 150°C
TJ = 150°C
—
2.8
—
TJ = 150°C
—
2.8
—
—
4
—
—
190
—
0.4
mJ
VBus = 600 V
IC = 50 A
RG = 10 Ω
RG
Integrated gate resistor
ISC
Short circuit data
VGE ≤ 15 V
Tj = 150°C
Ω
A
VBus = 900 V
tp ≤ 10 μs
RthJH
Junction-to-heatsink thermal
resistance
© 2021 Microchip Technology Inc.
and its subsidiaries
ƛpaste = 3.4 W/mK
Datasheet
—
°C/W
DS00004102A-page 4
MSCGLQ50DH120CTBL2NG
Electrical Specifications
1.2
Chopper SiC Diode Ratings and Characteristics (Per SiC Diode)
The following table lists the chopper SiC diode ratings and characteristics of MSCGLQ50DH120CTBL2NG device.
Table 1-4. Chopper SiC Diode Ratings and Characteristics
Symbol
Characteristic
VRRM
Peak repetitive reverse voltage
IRM
Reverse leakage current VR = 1200 V
IF
DC forward current
VF
Diode forward voltage
IF = 30 A
Min
Typ
Max
Unit
—
—
1200
V
TJ = 25°C
—
10
200
μA
TJ = 175°C
—
150
—
TH = 100°C
—
30
—
A
TJ = 25°C
—
1.5
1.8
V
TJ = 175°C
—
2.1
—
QC
Total capacitive charge
VR = 600 V
—
130
—
nC
C
Total capacitance
f = 1 MHz
VR = 400 V
—
141
—
pF
f = 1 MHz
VR = 800 V
—
105
—
—
0.854
—
RthJH
1.3
Test Conditions
Junction-to-heatsink thermal
resistance
ƛpaste = 3.4 W/mK
°C/W
IGBT Parallel SiC Diode Ratings and Characteristics (Per SiC Diode)
The following table lists the IGBT parallel SiC diode ratings and characteristics of MSCGLQ50DH120CTBL2NG
device.
Table 1-5. IGBT Parallel SiC Diode Ratings and Characteristics
Symbol
Characteristic
VRRM
Peak repetitive reverse voltage
IRM
Reverse leakage current VR = 1200 V
IF
DC forward current
VF
Diode forward voltage
Test Conditions
IF = 10 A
Min
Typ
Max
Unit
—
—
1200
V
TJ = 25°C
—
10
200
μA
TJ = 175°C
—
50
—
TH = 110°C
—
10
—
A
TJ = 25°C
—
1.5
1.8
V
TJ = 175°C
—
2.1
—
QC
Total capacitive charge
VR = 600 V
—
48
—
nC
C
Total capacitance
f = 1 MHz
VR = 400 V
—
55
—
pF
f = 1 MHz
VR = 800 V
—
43
—
—
1.63
—
RthJH
Junction-to-heatsink thermal
resistance
© 2021 Microchip Technology Inc.
and its subsidiaries
ƛpaste = 3.4 W/mK
Datasheet
°C/W
DS00004102A-page 5
MSCGLQ50DH120CTBL2NG
Electrical Specifications
1.4
Thermal and Package Characteristics
The following table lists the thermal and package characteristics of MSCGLQ50DH120CTBL2NG device.
Table 1-6. Thermal and Package Characteristics
Symbol
Characteristic
Min
Typ
Max
Unit
VISOL
RMS isolation voltage, any terminal to case t = 1 min,
50 Hz/60 Hz
2500
—
—
V
TJ
Operating junction temperature range
–55
—
175
°C
TJOP
Recommended junction temperature under switching
conditions
–55
—
TJmax–25
TSTG
Storage case temperature
–55
—
125
TC
Operating case temperature
–55
—
125
Torque
Mounting torque
1.5
—
2
N.m
Wt
Package weight
—
21.5
—
g
To heatsink
M4
The following table lists the temperature sensor NTC of MSCGLQ50DH120CTBL2NG device.
Table 1-7. Temperature Sensor NTC
Symbol
Characteristic
Min
Typ
Max
Unit
R25
Resistance at 25 °C
—
50
—
kΩ
ΔR25/R25
—
—
5
—
%
B25/85
T25 = 298.15 K
—
3952
—
K
ΔB/B
—
—
4
—
%
TC = 100°C
Note: See APT0406—Using NTC Temperature Sensor Integrated into Power Module for more information.
© 2021 Microchip Technology Inc.
and its subsidiaries
Datasheet
DS00004102A-page 6
MSCGLQ50DH120CTBL2NG
Electrical Specifications
1.5
Typical IGBT4 Performance Curve (Per IGBT)
This section shows the typical IGBT 4 performance curves of MSCGLQ50DH120CTBL2NG device.
Figure 1-1. Junction-to-Heatsink Thermal Impedance
Figure 1-2. Output Characteristics (VGE = 15 V)
© 2021 Microchip Technology Inc.
and its subsidiaries
Figure 1-3. Output Characteristics
Datasheet
DS00004102A-page 7
MSCGLQ50DH120CTBL2NG
Electrical Specifications
Figure 1-4. Transfer Characteristics
Figure 1-5. Energy losses vs. Collector Current
Figure 1-6. Switching Energy Losses vs. Gate
Resistance
Figure 1-7. Operating Frequency vs. Collector
Current
© 2021 Microchip Technology Inc.
and its subsidiaries
Datasheet
DS00004102A-page 8
MSCGLQ50DH120CTBL2NG
Electrical Specifications
1.6
Typical Chopper SiC Diode Performance Curve (Per SiC Diode)
This section shows the typical chopper SiC diode performance curves of MSCGLQ50DH120CTBL2NG device.
Figure 1-8. Junction-to-Heatsink Thermal Impedance
Figure 1-9. Forward Characteristics
© 2021 Microchip Technology Inc.
and its subsidiaries
Figure 1-10. Capacitance vs. Reverse Voltage
Datasheet
DS00004102A-page 9
MSCGLQ50DH120CTBL2NG
Electrical Specifications
1.7
Typical IGBT Parallel SiC Diode Performance Curve (Per SiC Diode)
This section shows the typical IGBT parallel SiC diode performance curves of MSCGLQ50DH120CTBL2NG device.
Figure 1-11. Junction-to-Heatsink Thermal Impedance
Figure 1-12. Forward Characteristics
© 2021 Microchip Technology Inc.
and its subsidiaries
Figure 1-13. Capacitance vs. Reverse Voltage
Datasheet
DS00004102A-page 10
MSCGLQ50DH120CTBL2NG
Package Specifications
2.
Package Specifications
The following section shows the package specification of MSCGLQ50DH120CTBL2NG device.
Package Outline
The following figure shows the package outline drawing of MSCGLQ50DH120CTBL2NG device. The dimensions in
the following figure are in millimeters.
Figure 2-1. Package Outline Drawing
6,1 ±0,3
1 ±0,3
6,1 ±0,3
1,5 ±0,5
A
4,4 ±0,2
13,4 ±0,5
6x
A
8 :1
8,8 ±0,5
17,7 ±0,5
2,54 ±0,25
17,3 ±0,5
2,54 ±0,25
10,5 ±0,5
0
0,3 ±0,5
10,5 ±0,5
17,3 ±0,5
43,6 ±1
4 X 9,3 ±0,5
7,8 ±0,5
1 ±0,1
0,5 ±0,1
14,1 ±0,5
12
°
0,8 ±0,1
2,54 ±0,15
0
9,5 ±0,2
3,8 ±0,5
35,7 ±1
2.1
7,62 ±0,25
8 ±0,5
13,4 ±0,5
2,54
13 ±0,5
© 2021 Microchip Technology Inc.
and its subsidiaries
Datasheet
3,8 ±0,5
2 ±0,3
8,2 ±0,5
DS00004102A-page 11
MSCGLQ50DH120CTBL2NG
Revision History
3.
Revision History
Revision
Date
Description
A
07/2021
Initial Revision
© 2021 Microchip Technology Inc.
and its subsidiaries
Datasheet
DS00004102A-page 12
MSCGLQ50DH120CTBL2NG
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Datasheet
DS00004102A-page 13
MSCGLQ50DH120CTBL2NG
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Datasheet
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MSCGLQ50DH120CTBL2NG
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