APT30M17JLL

APT30M17JLL 300V 135A 0.017Ω POWER MOS 7 ® R MOSFET G S D S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 SO 2 T- 27 "UL Recognized" ISOTOP ® • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package D G S All Ratings: TC = 25°C unless otherwise specified. APT30M17JLL UNIT Volts Amps 300 135 540 ±30 ±40 694 5.56 -55 to 150 300 135 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 3600 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 300 0.017 100 500 ±100 3 5 (VGS = 10V, ID = 67.5A) Ohms µA nA Volts 4-2004 050-7157 Rev A Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT30M17JLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 150V ID = 135A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 150V ID = 135A @ 25°C RG = 0.6Ω 6 INDUCTIVE SWITCHING @ 25°C VDD = 200V, VGS = 15V ID = 135A, RG = 5Ω 6 INDUCTIVE SWITCHING @ 125°C VDD = 200V, VGS = 15V ID = 135A, RG = 5Ω MIN TYP MAX UNIT 14100 3285 185 230 85 105 19 31 44 13 1120 1250 1325 1460 MIN TYP MAX UNIT Amps Volts ns µC V/ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy ns µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr rr dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 2 135 540 1.3 620 14 5 MIN TYP MAX (Body Diode) (VGS = 0V, IS = - ID135A) Reverse Recovery Time (IS = -ID135A, dl S/dt = 100A/µs) Reverse Recovery Charge (IS = -ID135A, dl S/dt = 100A/µs) Peak Diode Recovery dv/ dt 5 Q THERMAL CHARACTERISTICS Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient UNIT °C/W 0.18 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 0.40mH, RG = 25Ω, Peak IL = 135A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID135A di/dt ≤ 700A/µs VR ≤ 300V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.20 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.16 0.9 0.7 0.12 0.5 0.08 0.3 0.04 0.1 0 0.05 10-5 10-4 SINGLE PULSE Note: PDM t1 t2 Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t2 050-7157 Rev A 4-2004 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10 Typical Performance Curves ID, DRAIN CURRENT (AMPERES) Junction temp. (°C) RC MODEL 350 VGS =15 & 10V 300 250 200 150 100 6.5V 50 0 8V APT30M17JLL 0.0268 0.0456F 7.5V Power (watts) 0.109 0.765F 7V 0.0426 Case temperature. (°C) 23.5F 6V 5.5V FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 400 ID, DRAIN CURRENT (AMPERES) 350 300 250 200 150 100 50 0 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @