APT30M30JLL

APT30M30JLL 300V POWER MOS 7 R MOSFET ® Symbol 27 2 T- D G SO "UL Recognized" ISOTOP ® D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg 88A 0.030Ω G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT30M30JLL UNIT Drain-Source Voltage 300 Volts ID Continuous Drain Current @ TC = 25°C 88 IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 520 Watts Linear Derating Factor 4.16 W/°C VDSS PD TJ,TSTG 1 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS 1 Amps 352 -55 to 150 °C 300 Amps 88 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 50 4 mJ 3000 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 300 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 44A) TYP MAX Volts 0.030 Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) Downloaded from Elcodis.com electronic components distributor Ohms µA ±100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 7-2004 Characteristic / Test Conditions 050-7154 Rev B Symbol DYNAMIC CHARACTERISTICS Symbol APT30M30JLL Test Conditions Characteristic MIN TYP Ciss Input Capacitance Coss Output Capacitance VDS = 25V 1895 Reverse Transfer Capacitance f = 1 MHz 110 VGS = 10V 140 VDD = 150V 41 Crss Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time tr ID = 88A @ 25°C tf 19 VDD = 150V RG = 0.6Ω Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 9 INDUCTIVE SWITCHING @ 25°C 6 815 VDD = 200V, VGS = 15V 6 ns 35 ID = 88A @ 25°C Fall Time nC 15 VGS = 15V Turn-off Delay Time pF 70 RESISTIVE SWITCHING Rise Time td(off) UNIT 7030 VGS = 0V 3 MAX ID = 88A, RG = 5Ω 1185 INDUCTIVE SWITCHING @ 125°C 850 VDD = 200V, VGS = 15V ID = 88A, RG = 5Ω µJ 1250 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN Characteristic / Test Conditions TYP MAX 88 UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -88A, dl S/dt = 100A/µs) 450 ns Q Reverse Recovery Charge (IS = -88A, dl S/dt = 100A/µs) 10.0 µC rr dv/ dt Peak Diode Recovery dv/ 352 (Body Diode) 1.3 (VGS = 0V, IS = -88A) dt 5 Amps Volts 5 V/ns MAX UNIT THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP 0.24 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 0.77mH, RG = 25Ω, Peak IL = 88A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID88A di/dt ≤ 700A/µs VR ≤ 300V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and inforation contained herein. 0.9 0.20 0.7 0.15 Note: 0.10 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7154 Rev B 7-2004 0.25 0.5 0.3 t1 t2 Duty Factor D = t1/t2 0.05 0.1 0 Peak TJ = PDM x ZθJC + TC 0.05 10-5 SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Downloaded from Elcodis.com electronic components distributor °C/W 1.0 Typical Performance Curves 0.0528 0.0203F 0.0651 0.173F 0.123 0.490F Case temperature ID, DRAIN CURRENT (AMPERES) Junction temp. ( ”C) Power (Watts) APT30M30JLL 250 RC MODEL VGS =15 &10V 8V 200 7.5V 150 7V 100 6.5 6V 50 5.5V 0 VDS> ID (ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @