APT5510B2FLL APT5510LFLL
550V 49A 0.100Ω
POWER MOS 7
®
R
FREDFET
B2FLL
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
T-MAX™
TO-264
LFLL
• Increased Power Dissipation • Easier To Drive • Popular T-MAX™ or TO-264 Package • FAST RECOVERY BODY DIODE
D G S
All Ratings: TC = 25°C unless otherwise specified.
APT5510 UNIT Volts Amps
550 49 196 ±30 ±40 568 4.55 -55 to 150 300 49 35
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
550 49 0.100 250 1000 ±100 3 5
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 24.5A)
Ohms µA nA Volts
3-2003 050-7189 Rev A
Zero Gate Voltage Drain Current (VDS = 550, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 440, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT5510B2FLL - LFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 275V ID = 49A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 275V ID = 49A @ 25°C RG = 0.6Ω 6 INDUCTIVE SWITCHING @ 25°C VDD = 367V, VGS = 15V ID = 49A, RG = 5Ω 6 INDUCTIVE SWITCHING @ 125°C VDD = 367V VGS = 15V ID = 49A, RG = 5Ω
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
5823 1124 81 124 34 64 16 12 33 5 697 577 1025 664
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt
nC
ns
µJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns
49 196 1.3 15
Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C MIN
(Body Diode) (VGS = 0V, IS = -49A)
5
dv/
t rr
Reverse Recovery Time (IS = -49A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -49A, di/dt = 100A/µs) Peak Recovery Current (IS = -49A, di/dt = 100A/µs) Characteristic Junction to Case Junction to Ambient
260 600 1.9 5.7 15 23
TYP MAX
Q rr IRRM
µC
Amps
THERMAL CHARACTERISTICS
Symbol RθJC RθJA UNIT °C/W
0.22 40
4 Starting Tj = +25°C, L = 2.08mH, RG = 25Ω, Peak IL = 49A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID49A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20.
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.25
Z JC, THERMAL IMPEDANCE (°C/W) θ
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.20
0.9
0.7 0.15 0.5 0.10 0.3 0.05 0.1 0.05 0 10-5 10-4 Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC
050-7189 Rev A
3-2003
SINGLE PULSE 1.0
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves
140
RC MODEL
APT5510B2FLL - LFLL
VGS =15 & 10V
ID, DRAIN CURRENT (AMPERES)
Junction temp. ( ”C) 0.0144 0.00575F
120 100
7.5V
7V 80 60 40 20 0 6.5V
Power (Watts)
0.0763
0.0186F
6V 5.5V 5V
0.130 Case temperature
0.278F
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 140 120 100 80 60 40 20 0
VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @
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