APT5513B2FLL

APT5513B2FLL APT5513LFLL 550V 41A 0.130Ω POWER MOS 7 ® R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg • Increased Power Dissipation • Easier To Drive • Popular T-MAX™ or TO-264 Package • FAST RECOVERY BODY DIODE T-MAX™ TO-264 LFLL D G S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified. APT5513 UNIT Volts Amps 550 41 164 ±30 ±40 500 4.0 -55 to 150 300 41 35 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 1600 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 550 41 0.130 250 1000 ±100 3 5 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 20.5A) Ohms µA nA Volts 3-2003 050-7193 Rev A Zero Gate Voltage Drain Current (VDS = 550V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 440V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD dv/ dt APT5513B2FLL - LFLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 275V ID = 41A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 275V ID = 41A @ 25°C RG = 0.6Ω 6 INDUCTIVE SWITCHING @ 25°C VDD = 367V, VGS = 15V ID = 41A, RG = 5Ω 6 INDUCTIVE SWITCHING @ 125°C VDD = 367V VGS = 15V ID = 41A, RG = 5Ω Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 MIN TYP MAX UNIT pF 4268 838 60 98 25 55 14 11 30 5 517 431 796 501 MIN TYP MAX Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery 1 2 nC ns µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts V/ns ns 41 164 1.3 15 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C MIN (Body Diode) (VGS = 0V, IS = -41A) d v/ 5 dt t rr Reverse Recovery Time (IS = -41A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -41A, di/dt = 100A/µs) Peak Recovery Current (IS = -41A, di/dt = 100A/µs) Characteristic Junction to Case Junction to Ambient 250 500 2.16 5.57 15.5 22.4 TYP MAX Q rr IRRM µC Amps THERMAL CHARACTERISTICS Symbol RθJC RθJA UNIT °C/W 0.25 40 4 Starting Tj = +25°C, L = 1.90mH, RG = 25Ω, Peak IL = 41A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID41A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.30 Z JC, THERMAL IMPEDANCE (°C/W) θ APT Reserves the right to change, without notice, the specifications and information contained herein. 0.25 0.9 0.20 0.7 0.5 0.3 0.1 0.05 0.15 Note: PDM t1 t2 3-2003 0.10 050-7193 Rev A 0.05 SINGLE PULSE Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0 10-5 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 1.0 Typical Performance Curves 120 RC MODEL APT5513B2FLL - LFLL VGS =15 & 10V ID, DRAIN CURRENT (AMPERES) Junction temp. ( ”C) 0.0526 0.000456F 100 7.5V 7V 80 Power (Watts) 60 6.5V 6V 5.5V 5V 0.107 0.0121F 40 20 0 0.0898 Case temperature 0.338F RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 120 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @