APTM20HM10F

APTM20HM10F Full - Bridge MOSFET Power Module VDSS = 200V RDSon = 10mW max @ Tj = 25°C ID = 175A @ Tc = 25°C Application · · · · Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features · Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration · · OUT1 G1 S1 VBUS 0/VBUS G2 S2 · Benefits · · · · S3 G3 OUT2 S4 G4 Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 200 175 131 700 ±30 10 694 89 50 2500 Unit V A V mW W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM20HM10F– Rev 1 May, 2004 Tc = 25°C APTM20HM10F All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 375µA VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V Min 200 Tj = 25°C Tj = 125°C 3 Typ Max 375 1500 10 5 ±150 Unit V µA mW V nA VGS = 10V, ID = 87.5A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Switching Energy u Turn-off Switching Energy v Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 150A Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 150A RG = 2.5W Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 150A, RG = 2.5Ω Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 150A, RG = 2.5Ω Min Typ 13.7 4.36 0.2 224 86 94 28 56 81 99 926 910 1216 1062 µJ µJ ns Max Unit nF nC Source - Drain diode ratings and characteristics Symbol Characteristic Continuous Source current IS (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery w trr Qrr Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25°C Tc = 80°C VGS = 0V, IS = - 150A IS = -150A VR = 133V diS/dt = 200A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 2.14 5.8 Min Typ Max 175 131 1.3 8 220 420 Unit A V V/ns ns µC APTM20HM10F– Rev 1 May, 2004 u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. w dv/dt numbers reflect the limitations of the circuit rather than the device itself. VR £ VDSS Tj £ 150°C IS £ - 150A di/dt £ 700A/µs APT website – http://www.advancedpower.com 2–6 APTM20HM10F Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle ID, Drain Current (A) 400 300 200 100 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 1.15 1.1 1.05 1 0.95 0.9 0 40 80 120 160 200 ID, Drain Current (A) 240 VGS=20V 7.5V 7V 6.5V 6V 5.5V 300 200 TJ=25°C TJ=125°C T J=-55°C 100 0 2 3 4 5 6 7 8 9 VGS, Gate to Source Voltage (V) RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 200 180 160 140 120 100 80 60 40 20 0 25 50 75 100 125 TC, Case Temperature (°C) 150 VGS=10V ID, DC Drain Current (A) Normalized to VGS=10V @ 87.5A APT website – http://www.advancedpower.com 4–6 APTM20HM10F– Rev 1 May, 2004 APTM20HM10F RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Ciss 10000 Coss 1 ID, Drain Current (A) 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area limited by RDSon ON resistance vs Temperature VGS=10V ID= 87.5A 1000 100µs 100 1ms 10 Single pulse TJ=150°C 10ms DC line 1 10 100 1000 VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 12 VDS=40V ID=150A 10 TJ=25°C VDS=100V 8 6 4 2 0 0 50 100 150 200 250 Gate Charge (nC) VDS=160V 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) APT website – http://www.advancedpower.com 5–6 APTM20HM10F– Rev 1 May, 2004 APTM20HM10F Delay Times vs Current 90 80 td(on) and td(off) (ns) 70 60 50 40 30 20 10 0 50 100 150 200 250 300 ID, Drain Current (A) Switching Energy vs Current VDS=133V RG=2.5Ω TJ=125°C L=100µH Rise and Fall times vs Current 160 140 VDS=133V RG=2.5Ω TJ=125°C L=100µH td(off) tr and tf (ns) tf 120 100 80 60 40 20 0 0 tr td(on) 50 100 150 200 250 300 ID, Drain Current (A) Switching Energy vs Gate Resistance 2.5 2 1.5 1 0.5 0 0 50 100 150 200 250 300 ID, Drain Current (A) Operating Frequency vs Drain Current 300 Frequency (kHz) 250 200 150 100 50 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) VDS=133V D=50% RG=2.5Ω TJ=125°C 3 Switching Energy (mJ) 2.5 2 1.5 1 0 5 10 15 20 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 VDS=133V ID=150A TJ=125°C L=100µH Eon and Eoff (mJ) VDS=133V RG=2.5Ω TJ=125°C L=100µH Eon Eoff Eoff Eon IDR, Reverse Drain Current (A) 350 100 TJ=150°C TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM20HM10F– Rev 1 May, 2004