APTM20HM20STG

APTM20HM20STG Full bridge Series & parallel diodes MOSFET Power Module VBUS CR1A CR3A VDSS = 200V RDSon = 20mΩ typ @ Tj = 25°C ID = 89A @ Tc = 25°C Applicatio n • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Q1 CR1B CR3B Q3 G1 S1 CR2A O UT1 OUT2 CR4A G3 S3 Q2 CR2B CR4B Q4 G2 S2 NTC1 0/VBUS NTC2 G4 S4 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant G3 S3 G4 S4 OUT2 VBUS 0/VBUS O UT1 S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM20HM20STG – Rev 4 Max ratings 200 89 66 356 ±30 24 357 89 50 2500 Unit V A V mΩ W A July, 2006 APTM20HM20STG All ratings @ Tj = 25°C unless otherwise specified Symbol IDSS RDS(on) VGS(th) IGSS Electrical Characteristics Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V T j = 25°C T j = 125°C Min Typ VGS = 10V, ID = 44.5A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0 V 20 3 Max 100 500 24 5 ±100 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 75A Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 75A R G = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 75A, R G = 5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 75A, R G = 5 Ω Min Typ 6850 2180 97 112 43 47 28 56 81 99 463 455 608 531 Max Unit pF nC ns µJ µJ Diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Test Conditions VR=200V IF = 30A IF = 60A IF = 30A IF = 30A VR = 133V di/dt = 200A/µs Tj = 25°C Tj = 125°C Tc = 85°C Min 200 Typ Max 250 500 Unit V µA A trr Qrr Reverse Recovery Time Reverse Recovery Charge Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 24 48 33 150 ns nC www.microsemi.com 2–6 APTM20HM20STG – Rev 4 July, 2006 Tj = 125°C 30 1.1 1.4 0.9 1.15 V APTM20HM20STG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Transistor Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.35 1.2 150 125 100 4.7 160 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle I D, Drain Current (A) 200 150 100 50 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) RDS (on) vs Drain Current 1.2 1.15 1.1 1.05 1 0.95 0.9 0 20 40 60 80 100 I D, Drain Current (A) 120 VGS =20V 7.5V 7V 6.5V 6V 5.5V T J=25°C TJ =125°C TJ =-55°C 2 3 4 5 6 7 8 9 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 100 I D, DC Drain Current (A) RDS(on) Drain to Source ON Resistance Normalized to V GS=10V @ 44.5A 80 60 40 20 0 25 July, 2006 4–6 APTM20HM20STG – Rev 4 VGS =10V 50 75 100 125 TC, Case Temperature (°C) 150 www.microsemi.com APTM20HM20STG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Ciss Coss 2.5 2.0 1.5 1.0 0.5 0.0 ON resistance vs Temperature VGS=10V ID= 44.5A -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area 1000 I D, Drain Current (A) 100 limited by RDSon 100µs 1ms 10 Single pulse T J=150°C T C=25°C 10ms DC line 1 1 10 100 1000 VDS , Drain to Source Voltage (V) 10000 VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 12 VDS=40V ID=75A 10 TJ=25°C VDS=100V 8 6 4 2 0 0 25 50 75 VDS=160V 1000 Crss 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 100 125 Gate Charge (nC) July, 2006 www.microsemi.com 5–6 APTM20HM20STG – Rev 4 APTM20HM20STG Delay Times vs Current Rise and Fall times vs Current 90 80 td(on) and td(off) (ns) 160 140 td(off) t r and tf (ns) VDS=133V RG=5Ω TJ=125°C L=100µH 70 60 50 40 30 20 10 0 25 50 75 100 120 100 80 60 40 20 0 150 0 VDS=133V RG=5Ω T J=125°C L=100µH tf tr td(on) 125 25 50 75 100 125 150 ID, Drain Current (A) Switching Energy vs Current ID, Drain Current (A) 1200 1000 Eon and Eoff (µJ) Switching Energy vs Gate Resistance 1500 Switching Energy (µJ) 1250 1000 750 500 250 Eoff VDS=133V ID=75A T J=125°C L=100µH 800 600 400 200 0 0 VDS=133V RG=5Ω T J=125°C L=100µH Eon Eoff Eoff Eon 25 50 75 100 125 150 0 5 10 15 20 25 30 35 40 I D, Drain Current (A) Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 Operating Frequency vs Drain Current 300 Frequency (kHz) 250 200 150 100 50 0 10 20 30 40 50 60 70 ID, Drain Current (A) 80 ZCS Hard switching VDS=133V D=50% RG=5Ω T J=125°C T C=75°C ZVS IDR, Reverse Drain Current (A) 350 100 T J=150°C 10 TJ=25°C 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 VSD, Source to Drain Voltage (V) July, 2006 Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM20HM20STG – Rev 4 M icrosemi reserves the right to change, without notice, the specifications and information contained herein