AOTF11N70

AOT11N70/AOTF11N70 700V,11A N-Channel MOSFET General Description Product Summary The AOT11N70 & AOTF11N70 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 800V@150℃ 11A RDS(ON) (at VGS=10V) < 0.87Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT11N70L & AOTF11N70L Top View D TO-220F TO-220 G D G S G D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT11N70 Drain-Source Voltage VDS 700 Gate-Source Voltage ±30 Continuous Drain Current VGS TC=25°C TC=100°C AOTF11N70 V 11 ID Units V 11* 7.2 7.2* A Pulsed Drain Current C IDM Avalanche Current C IAR 4 A Repetitive avalanche energy C EAR 120 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D EAS dv/dt 240 5 mJ V/ns W 43 271 PD TJ, TSTG -55 to 150 W/ oC °C 300 °C 0.4 TL Symbol RθJA RθCS AOT11N70 65 AOTF11N70 65 Units °C/W 0.5 0.46 -2.5 °C/W °C/W Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev 0: March 2010 50.0 2.1 www.aosmd.com Page 1 of 6 AOT11N70/AOTF11N70 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 700 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 800 V ID=250µA, VGS=0V 0.8 V/ oC VDS=700V, VGS=0V 1 VDS=560V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5.5A gFS Forward Transconductance VDS=40V, ID=5.5A VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM 3.8 4.5 nΑ V 0.72 0.87 Ω 1 V Maximum Body-Diode Continuous Current 11 A Maximum Body-Diode Pulsed Current 43 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss ±100 µA Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz Gate Source Charge Qgd Gate Drain Charge 17 S 0.72 1430 1793 2150 pF 116 146 190 pF 8.4 10.5 15 pF VGS=0V, VDS=0V, f=1MHz 1.8 3.6 5.4 Ω 30 37.5 45 nC VGS=10V, VDS=560V, ID=11A 7.8 10 12 nC 12 15 22 nC SWITCHING PARAMETERS Qg Total Gate Charge Qgs 3 tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=11A,dI/dt=100A/µs,VDS=100V 320 400 480 Qrr Body Diode Reverse Recovery Charge IF=11A,dI/dt=100A/µs,VDS=100V 7.2 9 11 VGS=10V, VDS=350V, ID=11A, RG=25Ω 42 ns 74 ns 103 ns 62 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using