AOTF360A70L

AOT360A70L/AOTF360A70L/AOB360A70L 700V, a MOS5 TM N-Channel Power Transistor General Description Product Summary • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery VDS @ Tj,max 800V IDM 48A RDS(ON),max < 0.36Ω Qg,typ 22.5nC Eoss @ 400V 2.8mJ Applications 100% UIS Tested 100% Rg Tested • Flyback for SMPS • Charger ,PD Adapter, TV, lighting. D TO-263 D2PAK TO-220F TO-220 D G D S S G D AOT360A70L G S G AOB360A70L AOTF360A70L S Orderable Part Number Package Type Form Minimum Order Quantity AOB360A70L AOT360A70L AOTF360A70L TO263 TO220 Green TO220F Green Tape&Reel Tube Tube 800 1000 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage Gate-Source Voltage (dynamic) AC( f>1Hz) TC=25°C Continuous Drain Current Pulsed Drain Current Avalanche Current C TC=100°C C AOTF360A70L Units V VGS ±20 V VGS ±30 12 V 12* 7.6 7.6* IDM 48 A IAR 3.4 A Repetitive avalanche energy C EAR 5.8 mJ Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C EAS 50 100 20 mJ Power Dissipation B L=1mH 700 ID AOT(B)360A70L Derate above 25°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D dv/dt PD W 1.25 0.23 W/°C TL RqCS Maximum Case-to-sink A Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature. Rev2.0: September 2023 29.5 TJ, TSTG Symbol RqJA V/ns 156 -55 to 150 °C 300 °C AOT(B)360A70L AOTF360A70L Units 65 65 °C/W 0.5 0.8 --4.2 °C/W °C/W www.aosmd.com Page 1 of 6 AOT360A70L/AOTF360A70L/AOB360A70L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250μA, VGS=0V, TJ=25°C 700 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) VDS=5V, ID=250mA RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance gFS Forward Transconductance VDS=10V, ID=6A VSD Diode Forward Voltage IS=6A,VGS=0V IS Maximum Body-Diode Continuous Current ISM Maximum Body-Diode Pulsed Current Output Capacitance Co(er) Effective output capacitance, energy H related Crss Effective output capacitance, time I related Reverse Transfer Capacitance Rg Gate resistance Co(tr) 800 ID=250μA, VGS=0V 0.6 V o V/ C VDS=700V, VGS=0V 1 VDS=560V, TJ=125°C 10 ±100 3.4 VGS=10V, ID=6A VGS=0V, VDS=100V, f=1MHz mA nA 4 4.6 V 0.316 0.36 Ω S 1.2 V 12 A 48 A 10 0.86 C DYNAMIC PARAMETERS Ciss Input Capacitance Coss ID=250μA, VGS=0V, TJ=150°C 1360 pF 34 pF 32 pF 147 pF 1.7 pF 2 Ω 22.5 nC 9 nC VGS=0V, VDS=0 to 480V, f=1MHz VGS=0V, VDS=100V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=480V, ID=6A Qgs Gate Source Charge Qgd Gate Drain Charge 6.3 nC Td(on) Turn-On DelayTime 24.5 ns Tr Turn-On Rise Time Td(off) Turn-Off DelayTime Tf 17 ns 34.5 ns Turn-Off Fall Time 13 ns Trr Body Diode Reverse Recovery Time 310 ns Irm Peak Reverse Recovery Current 24.5 Qrr Body Diode Reverse Recovery Charge A mC VGS=10V, VDS=400V, ID=6A, RG=5W IF=6A, dI/dt=100A/ms, VDS=400V 4.8 A. The value of R qJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R qJA is the sum of the thermal impedance from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using