SBT5551F

Semiconductor SBT5551F NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE(sat)=0.5V(MAX.) • Complementary pair with SBT5401F Ordering Information Type NO. SBT5551F Marking FNF Package Code SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1 2.9±0.1 1.90 BSC 3 0.4±0.05 0.9±0.1 2 0.15±0.05 PIN Connections 1. Base 2. Emitter 3. Collector 0~0.1 KST-2097-000 1 SBT5551F Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 180 160 6 600 200 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Collector-Emitter saturation voltage Collector-Emitter saturation voltage Base-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Collector output capacitance (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE (1) hFE (2) hFE (3) VCE(sat)(1) VBE(sat)(1) fT Cob * Test Condition IC=100µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=120V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=10V, IC=10mA VCB=10V, IE=0, f=1MHz Min. Typ. Max. 180 160 6 80 80 30 100 0.2 0.5 1 1 400 6 250 100 100 Unit V V V nA nA V V V V MHz pF VCE(sat)(2)* * VBE(sat)(2)* * : Pulse Tester : Pulse Width ≤300µs, Duty Cycle ≤2.0% KST-2097-000 2 SBT5551F Electrical Characteristic Curves Fig. 1 hFE - IC Fig. 2 IC - VBE Fig. 3 fT - IC v Fig. 4 VCE(sat), VBE(sat) - IC Fig. 5 Cob - VCB KST-2097-000 3