LL4151

BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE FEATURES Silicon epitaxial planar diode High speed switching diode 500 mW power dissipation LL4151 REVERSE VOLTAGE : 50 V CURRENT: 0.15 A MINI-MELF Cathode indification φ .5±0.1 1 3.4 +0.3 -0.1 0.4±0.1 MECHANICAL DATA Case: MINI-MELF,glass case Polarity: Color band denotes cathode Weight: 0.031 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at ２５ ambient temperature unless otherwise specified. MAXIMUM RATINGS LL4151 Reverse voltage Peak reverse voltage Average forw ard rectified current half w ave rectification w ith resistive load VR=0V Forw ard surge current @ tP=1µ s Pow er dissipation @ TA=２５ Junction temperature Storage temperature range UNITS V V mA A mW VR VRM IF(AV) IFSM Ptot TJ TSTG MIN 75.0 - 50 75 1501) 2.0 5001) 175 -55 --- +175 1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature. ELECTRICAL CHARACTERISTICS Forw ard voltage @ IF=50mA Leakage current @ VR=50V @ VR=50V TJ =150 Capacitance @ V R=0V,f=1MHz,VHF=50mV Reverse breakdown voltage tested with 5μA pulses Reverse recovery time from IF=10mA to IR=10mA to IR=1mA f rom IF=10mA to IR=1mA, VR=6V. RL=100Ω. Thermal resistance junction to ambient Rectification efficiency @ 100MHz,V RF=2V VF IR IR CJ V(BR)R trr RθJA ηv TYP 0.8 - MAX 1.0 50 50 2.0 4 2 5001) - UNITS V nA μA pF V ns ns K/W - 0.45 - 1)Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. www.galaxycn.com Document Number 0268023 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES FIG.1 -- ADMISSIBLE POWER DISSIPATION NNNNNN VERSUS AMBIENT TEMPERATURE LL4151 FIG.2 -- FORWARD CHARACTERISTICS mW 1000 900 800 mA 10 3 10 2 Ptot 700 600 500 400 300 200 100 0 0 100 200℃ I F 10 T J =100 T J =25 1 10 -1 TA 10 -2 0 1 VF 2V FIG.3 -- ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION A 100 IFRM 10 V=tp/T IFRM T=1/fp tp n=0 0.1 1 T 0.2 0.5 0.1 10 -5 10 -4 10 -3 10 -2 10 -1 1 10S tp www.galaxycn.com Document Number 0268023 BLGALAXY ELECTRICAL 2. RATINGS AND CHARACTERISTIC CURVES FIG.4 -- RECTIFICATION EFFICIENCY JJJJJJJJMEASUREMENT CIRCUIT LL4151 FIG.5 -- RELATIVE CAPACITANCE VERSUS JJJJJJJJJJJJJJ VOLTAGE 1.1 D.U.T. 60 VRF=2V 2nF 5K VO Ctot(V R ) Ctot(OV) 1.0 T J =25 f=1MHz 0.9 0.8 0.7 0 2 4 6 8 1 0V VR FIG.6 -- LEAKAGE CURRENT VERSUS JUNCTION TEMPERATUREFF FIG.7 -- DYNAMIC FORWARD RESISTANCE FFFVERSUS FORWARD CURRENT nA 10 4 10 4 TJ=25℃ f=1MHz 10 3 10 3 r 10 2 F 10 2 10 10 V R =50V 1 0 10 0 20 0 ℃ 1 10 -2 10 -1 1 10 IF 10 2 mA www.galaxycn.com Document Number 0268023 BLGALAXY ELECTRICAL 3.