CSD13201W10

Product Folder Sample & Buy Support & Community Tools & Software Technical Documents CSD13201W10 SLPS306A – MAY 2012 – REVISED SEPTEMBER 2015 CSD13201W10 N-Channel NexFET™ Power MOSFET 1 Features • • • • • • • 1 Product Summary Ultra-Low Qg and Qgd Small Footprint (1 mm × 1 mm) Low Profile 0.62-mm Height Pb-Free RoHS Compliant Halogen-Free Gate-Source Voltage Clamp TA = 25°C TYPICAL VALUE Drain-to-Source Voltage 12 V Qg Gate Charge Total (4.5 V) 2.3 nC Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage 2 Applications • • • UNIT VDS 0.3 nC VGS = 1.8 V 38 VGS = 2.5 V 29 VGS = 4.5 V 26 0.8 mΩ mΩ V Device Information(1) Battery Management Load Switch Battery Protection PART NUMBER PACKAGE MEDIA CSD13201W10 1 mm × 1 mm Wafer Level Package 7-inch reel QTY SHIP 3000 Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet. 3 Description This 12-V, 26-mΩ, N-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Top View Absolute Maximum Ratings TA = 25°C VALUE UNIT VDS Drain-to-Source Voltage 12 V VGS Gate-to-Source Voltage ±8 V ID Continuous Drain Current, TA = 25°C(1) 1.6 A IDM Pulsed Drain Current, TA = 25°C(2) 20.2 A PD Power Dissipation(1) 1.2 W TJ, Tstg Operating Junction and Storage Temperature Range –55 to 150 °C (1) RθJA = 105°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 PCB. (2) Pulse width ≤ 300 μs, duty cycle ≤ 2% RDS(on) vs VGS Gate Charge 5 TC = 25°C Id = 1A TC = 125ºC Id = 1A 55 VGS - Gate-to-Source Voltage (V) RDS(on) - On-State Resistance - mΩ 60 50 45 40 35 30 25 20 15 10 0 1 2 3 4 5 6 VGS - Gate-to- Source Voltage - V 7 8 G001 ID = 1A VDS = 6V 4 3 2 1 0 0 0.5 1 1.5 Qg - Gate Charge - nC (nC) 2 2.5 G001 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD13201W10 SLPS306A – MAY 2012 – REVISED SEPTEMBER 2015 www.ti.com Table of Contents 1 2 3 4 5 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Specifications......................................................... 1 1 1 2 3 5.1 Electrical Characteristics........................................... 3 5.2 Thermal Information .................................................. 3 5.3 Typical MOSFET Characteristics.............................. 4 6 Device and Documentation Support.................... 7 6.1 6.2 6.3 6.4 7 Community Resources.............................................. Trademarks ............................................................... Electrostatic Discharge Caution ................................ Glossary .................................................................... 7 7 7 7 Mechanical, Packaging, and Orderable Information ............................................................. 8 7.1 CSD13201W10 Package Dimensions ...................... 8 7.2 Land Pattern Recommendation ................................ 9 7.3 Tape and Reel Information ....................................... 9 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Original (May 2012) to Revision A Page • Added part number to title ..................................................................................................................................................... 1 • Enhanced Description ........................................................................................................................................................... 1 • Added Device and Documentation Support section. ............................................................................................................. 7 2 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: CSD13201W10 CSD13201W10 www.ti.com SLPS306A – MAY 2012 – REVISED SEPTEMBER 2015 5 Specifications 5.1 Electrical Characteristics TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA IDSS Drain-to-source leakage current VGS = 0 V, VDS = 9.6 V IGSS Gate-to-source leakage current VDS = 0 V, VGS = 8 V VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA RDS(on) Drain-to-source on resistance gfs Transconductance 12 0.65 V 1 μA 100 nA V 0.8 1.1 VGS = 1.8 V, ID = 1 A 38 53 VGS = 2.5 V, ID = 1 A 29 39 VGS = 4.5 V, ID = 1 A 26 34 VDS = 6 V, ID = 1 A 23 mΩ S DYNAMIC CHARACTERISTICS CISS Input capacitance 385 COSS Output capacitance CRSS Reverse transfer capacitance Rg Series gate resistance Qg Gate charge total (4.5 V) 2.3 Qgd Gate charge gate-to-drain 0.3 nC Qgs Gate charge gate-to-source 0.5 nC Qg(th) Gate charge at Vth 0.3 nC QOSS Output charge 1.8 nC td(on) Turn on delay time 3.9 ns tr Rise time 5.9 ns td(off) Turn off delay time 14.4 ns tf Fall time 9.7 ns VGS = 0 V, VDS = 6 V, ƒ = 1 MHz 462 pF 245 294 pF 18.1 22.6 pF Ω 3 VDS = 6 V, ID = 1 A VDS = 6.0 V, VGS = 0 V VDS = 6 V, VGS = 4.5 V, ID = 1 A RG = 20 Ω 2.9 nC DIODE CHARACTERISTICS VSD Diode forward voltage Qrr Reverse recovery charge trr Reverse recovery time IS = 1 A, VGS = 0 V 0.7 VDS= 6 V, IS = 1 A, di/dt = 100 A/μs 1 V 2.4 nC 11.5 ns 5.2 Thermal Information (TA = 25°C unless otherwise stated) MAX UNIT RθJA Thermal resistance junction-to-ambient (minimum Cu area) THERMAL METRIC MIN TYP 228.6 °C/W RθJA Thermal resistance junction-to-ambient (1 in2 Cu area) 131.1 °C/W Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: CSD13201W10 3 CSD13201W10 SLPS306A – MAY 2012 – REVISED SEPTEMBER 2015 www.ti.com Max RθJA = 228.6°C/W when mounted on minimum pad area of 2 oz. Cu. Max RθJA = 131.1°C/W when mounted on 1 inch2 of 2 oz. Cu. 5.3 Typical MOSFET Characteristics TA = 25°C (unless otherwise noted) Figure 1. Transient Thermal Impedance 4 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: CSD13201W10 CSD13201W10 www.ti.com SLPS306A – MAY 2012 – REVISED SEPTEMBER 2015 Typical MOSFET Characteristics (continued) TA = 25°C (unless otherwise noted) 10 VDS = 5V 9 IDS - Drain-to-Source Current - A IDS - Drain-to-Source Current - A 10 8 7 6 5 4 3 VGS =6V VGS =4.5V VGS =1.5V 2 1 0 0 1 2 3 4 VDS - Drain-to-Source Voltage - V 8 6 4 TC = 125°C TC = 25°C TC = −55°C 2 0 0.5 5 1 1.5 VGS - Gate-to-Source Voltage - V G001 Figure 2. Saturation Characteristics Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd ID = 1A VDS = 6V 4 C − Capacitance − nF VGS - Gate-to-Source Voltage (V) 0.5 3 2 1 0.4 0.3 0.2 0.1 0 0.5 1 1.5 Qg - Gate Charge - nC (nC) 2 0 2.5 0 2 G001 Figure 4. Gate Charge 4 6 8 10 VDS - Drain-to-Source Voltage - V 12 G001 Figure 5. Capacitance 1.5 60 RDS(on) - On-State Resistance - mΩ ID = 250uA VGS(th) - Threshold Voltage - V G001 Figure 3. Transfer Characteristics 5 0 2 1.2 0.9 0.6 0.3 0 −75 −25 25 75 125 TC - Case Temperature - ºC Figure 6. Threshold Voltage vs Temperature 175 TC = 25°C Id = 1A TC = 125ºC Id = 1A 55 50 45 40 35 30 25 20 15 10 0 1 G001 2 3 4 5 6 VGS - Gate-to- Source Voltage - V 7 8 G001 Figure 7. On Resistance vs Gate Voltage Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: CSD13201W10 5 CSD13201W10 SLPS306A – MAY 2012 – REVISED SEPTEMBER 2015 www.ti.com Typical MOSFET Characteristics (continued) TA = 25°C (unless otherwise noted) 1.8 1.6 10 VGS = 1.8V VGS = 2.5V VGS = 4.5V ID =1A ISD − Source-to-Drain Current - A Normalized On-State Resistance 2 1.4 1.2 1 0.8 0.6 0.4 −75 −25 25 75 125 TC - Case Temperature - ºC TC = 25°C TC = 125°C 1 0.1 0.01 0.001 0.0001 175 0 0.2 0.4 0.6 0.8 VSD − Source-to-Drain Voltage - V G001 Figure 8. On Resistance vs Temperature 1 G001 Figure 9. Typical Diode Forward Voltage − IDS - Drain- to- Source Current - A 2.0 1.5 1.0 0.5 0.0 −50 Figure 10. Maximum Safe Operating Area 6 −25 0 25 50 75 100 125 TC - Case Temperature - ºC 150 175 G001 Figure 11. Maximum Drain Current vs Temperature Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: CSD13201W10 CSD13201W10 www.ti.com SLPS306A – MAY 2012 – REVISED SEPTEMBER 2015 6 Device and Documentation Support 6.1 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 6.2 Trademarks E2E is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. 6.3 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 6.4 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: CSD13201W10 7 CSD13201W10 SLPS306A – MAY 2012 – REVISED SEPTEMBER 2015 www.ti.com 7 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 7.1 CSD13201W10 Package Dimensions Pin 1 Mark 1 Solder Ball Ø 0.31 ±0.075 2 2 1 A 1.00 0.50 +0.00 –0.10 A B B 1.00 +0.00 –0.10 0.50 Side View Bottom View 0.04 0.62 Max 0.38 Top View 0.62 Max Seating Plate Front View M0151-01 NOTE: All dimensions are in mm (unless otherwise specified) Pin Configuration Table 8 POSITION DESIGNATION A2 Source A1 Gate B1, B2 Drain Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: CSD13201W10 CSD13201W10 www.ti.com SLPS306A – MAY 2012 – REVISED SEPTEMBER 2015 7.2 Land Pattern Recommendation Ø 0.25 1 2 0.50 A B 0.50 M0152-01 NOTE: All dimensions are in mm (unless otherwise specified) Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: CSD13201W10 9 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) CSD13201W10 ACTIVE DSBGA YZB 4 3000 RoHS & Green SNAGCU Level-1-260C-UNLIM -55 to 150 201 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of