TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B
TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y
LinCMOS DUAL OPERATIONAL AMPLIFIERS
SLOS002I – JUNE 1983 – REVISED MARCH 2001
D
D
D
D
D
D
D, P, OR PW PACKAGE
(TOP VIEW)
A-Suffix Versions Offer 5-mV VIO
B-Suffix Versions Offer 2-mV VIO
Wide Range of Supply Voltages
1.4 V to 16 V
True Single-Supply Operation
Common-Mode Input Voltage Includes the
Negative Rail
Low Noise . . . 30 nV/√Hz Typ at f = 1 kHz
(High-Bias Versions)
1OUT
1IN –
1IN +
VDD – /GND
1
8
2
7
3
6
4
5
VDD
2OUT
2IN –
2IN +
symbol (each amplifier)
description
+
IN +
The TLC252, TLC25L2, and TLC25M2 are
OUT
IN –
–
low-cost, low-power dual operational amplifiers
designed to operate with single or dual supplies.
These devices utilize the Texas Instruments
silicon gate LinCMOS process, giving them stable input offset voltages that are available in selected grades
of 2, 5, or 10 mV maximum, very high input impedances, and extremely low input offset and bias currents.
Because the input common-mode range extends to the negative rail and the power consumption is extremely
low, this series is ideally suited for battery-powered or energy-conserving applications. The series offers
operation down to a 1.4-V supply, is stable at unity gain, and has excellent noise characteristics.
These devices have internal electrostatic-discharge (ESD) protection circuits that prevent catastrophic failures
at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.1. However, care should be exercised
in handling these devices as exposure to ESD may result in a degradation of the device parametric
performance.
AVAILABLE OPTIONS
TA
0°C to 70°C
VIOmax
AT 25°C
PACKAGED DEVICES
SMALL OUTLINE
(D)
PLASTIC DIP
(P)
TSSOP
(PW)
CHIP FORM
(Y)
10 mV
5 mV
2 mV
TLC252CD
TLC252ACD
TLC252BCD
TLC252CP
TLC252ACP
TLC252BCP
TLC252CPW
TLC252ACPW
TLC252BCPW
TLC252Y
—
—
10 mV
5 mV
2 mV
TLC25L2CD
TLC25L2ACD
TLC25L2BCD
TLC25L2CP
TLC25L2ACP
TLC25L2BCP
TLC25L2CPW
TLC25L2ACPW
TLC25L2BCPW
TLC25L2Y
—
—
10 mV
5 mV
2 mV
TLC25M2CD
TLC25M2ACD
TLC25M2BCD
TLC25M2CP
TLC25M2ACP
TLC25M2BCP
—
—
—
TLC25M2Y
—
—
The D package is available taped and reeled. Add the suffix R to the device type (e.g., TLC252CDR). Chips are tested at 25°C.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
LinCMOS is a trademark of Texas Instruments.
Copyright 2001, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
1
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B
TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y
LinCMOS DUAL OPERATIONAL AMPLIFIERS
SLOS002I – JUNE 1983 – REVISED MARCH 2001
description (continued)
Because of the extremely high input impedance and low input bias and offset currents, applications for the
TLC252/ 25_2 series include many areas that have previously been limited to BIFET and NFET product types.
Any circuit using high-impedance elements and requiring small offset errors is a good candidate for
cost-effective use of these devices. Many features associated with bipolar technology are available with
LinCMOS operational amplifiers without the power penalties of traditional bipolar devices. General
applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal
buffering are all easily designed with the TLC252 / 25_2 series devices. Remote and inaccessible equipment
applications are possible using their low-voltage and low-power capabilities. The TLC252 / 25_2 series is well
suited to solve the difficult problems associated with single-battery and solar-cell-powered applications. This
series includes devices that are characterized for the commercial temperature range and are available in 8-pin
plastic dip and the small-outline package. The device is also available in chip form.
The TLC252 / 25_2 series is characterized for operation from 0°C to 70°C.
equivalent schematic (each amplifier)
VDD
IN +
IN –
8
3, 5
ESDProtective
Network
2, 6
ESDProtective
Network
1, 7
VDD – /GND
2
4
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
OUT
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B
TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y
LinCMOS DUAL OPERATIONAL AMPLIFIERS
SLOS002I – JUNE 1983 – REVISED MARCH 2001
TLC252Y, TLC25L2Y, and TLC25M2Y chip information
These chips, properly assembled, display characteristics similar to the TLC252 / 25_2. Thermal compression
or ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with
conductive epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
(5)
(4)
(3)
VDD
(8)
(3)
+
1IN +
(6)
(2)
–
1IN –
2OUT
60
(1)
1OUT
(2)
+
(7)
–
(5)
(6)
2IN +
2IN –
(4)
VDD – /GND
CHIP THICKNESS: 15 TYPICAL
(1)
(7)
BONDING PADS: 4 × 4 MINIMUM
TJMAX = 150°C
(8)
TOLERANCES ARE ± 10%.
73
ALL DIMENSIONS ARE IN MILS.
PIN (4) IS INTERNALLY CONNECTED
TO BACKSIDE OF CHIP.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
3
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B
TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y
LinCMOS DUAL OPERATIONAL AMPLIFIERS
SLOS002I – JUNE 1983 – REVISED MARCH 2001
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†
Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 V
Differential input voltage, VID (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 18 V
Input voltage range, VI (any input) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.3 V to 18 V
Duration of short circuit at (or below) 25°C free-air temperature (see Note 3) . . . . . . . . . . . . . . . . . . unlimited
Continuous total dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values, except differential voltages, are with respect to VDD – /GND.
2. Differential voltages are at IN+, with respect to IN –.
3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure the maximum dissipation
rating is not exceeded.
DISSIPATION RATING TABLE
TA ≤ 25°C
POWER RATING
DERATING FACTOR
ABOVE TA = 25°C
TA = 70°C
POWER RATING
D
725 mW
5.8 mW/°C
464 mW
P
1000 mW
8.0 mW/°C
640 mW
PW
525 mW
4.2 mW/°C
336 mW
PACKAGE
recommended operating conditions
MIN
Supply voltage, VDD
Common mode input voltage,
Common-mode
voltage VIC
VDD = 1.4 V
VDD = 5 V
VDD = 10 V
VDD = 16 V
Operating free-air temperature, TA
4
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
MAX
1.4
16
0
0.2
– 0.2
4
– 0.2
9
– 0.2
14
0
70
UNIT
V
V
°C
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B
TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y
LinCMOS DUAL OPERATIONAL AMPLIFIERS
SLOS002I – JUNE 1983 – REVISED MARCH 2001
electrical characteristics at specified free-air temperature, VDD = 1.4 V (unless otherwise noted)
PARAMETER
TLC25_2C
VIO
Input
offset
voltage
TLC25_2AC
TLC252_C
TEST CONDITIONS†
2V
VO = 0
0.2
V,
RS = 50 Ω
TLC25_2BC
MIN
TLC25L2_C
MAX
MIN
TYP
TLC25M2_C
MAX
MIN
TYP
MAX
25°C
10
10
10
0°C to
70°C
12
12
12
25°C
5
5
5
0°C to
70°C
6.5
6.5
6.5
25°C
2
2
2
0°C to
70°C
3
3
3
αVIO
Average temperature
coefficient of input
offset voltage
IIO
Input offset current
VO = 0.2 V
0°C to
70°C
IIB
Input bias current
VO = 0.2 V
0°C to
70°C
25°C
to
70°C
1
25°C
1
VICR
Common-mode input
voltage range
VOM
Peak output voltage
swing‡
AVD
Large-signal
differential voltage
amplification
CMRR
Common-mode
rejection ratio
IDD
Supply current
1
60
1
0 to
0.2
VID = 100 mV
25°C
450
VO = 100 to 300 mV,
RS = 50 Ω
25°C
60
1
25°C
700
1
700
600
450
20
77
60
77
375
25
60
34
pA
60
0 to
0.2
450
mV
60
300
60
0 to
0.2
300
1
600
10
60
60
UNIT
µV/°C
1
300
600
25°C
25°C
1
300
25°C
VO = 0.2 V,
VIC = VICRmin
VO = 0.2 V,
No load
TYP
pA
V
700
mV
20
V/mV
77
dB
200
250
µA
† All characteristics are measured under open-loop conditions with zero common-mode input voltage unless otherwise specified. Unless otherwise
noted, an output load resistor is connected from the output to ground and has the following value: for low bias RL = 1 MΩ, for medium bias
RL = 100 kΩ, and for high bias RL = 10 kΩ.
‡ The output swings to the potential of VDD – /GND.
operating characteristics, VDD = 1.4 V, TA = 25°C
PARAMETER
TEST CONDITIONS
B1
Unity-gain bandwidth
AV = 40 dB,
CL = 10 pF,
RS = 50 Ω
SR
Slew rate at unity gain
Overshoot factor
TLC252_C
MIN
TYP
TLC25L2_C
MAX
MIN
TYP
12
12
See Figure 1
0.1
See Figure 1
30%
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
MAX
TLC25M2_C
MIN
TYP
MAX
UNIT
12
kHz
0.001
0.01
V/µs
35%
35%
5
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B
TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y
LinCMOS DUAL OPERATIONAL AMPLIFIERS
SLOS002I – JUNE 1983 – REVISED MARCH 2001
electrical characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA†
TLC252C, TLC252AC,
TLC252BC
MIN
TLC252C
VIO
Input offset voltage
VO = 1.4 V,,
RS = 50 Ω,
VIC = 0,,
RL = 10 kΩ
VIC = 0,,
RL = 10 kΩ
Full range
TLC252BC
VO = 1.4 V,,
RS = 50 Ω,
VIC = 0,,
RL = 10 kΩ
Full range
IIO
Input offset current (see Note 4)
VO = 2
2.5
5V
V,
VIC = 2
2.5
5V
IIB
Input bias current (see Note 4)
VO = 2
2.5
5V
V,
VIC = 2
2.5
5V
VOH
VOL
Low-level output voltage
VID = 100 mV,
RL = 10 kΩ
VID = – 100 mV,
IOL = 0
CMRR
kSVR
IDD
Large-signal
L
i
l differential
diff
ti l voltage
lt
am
lification
amplification
Common-mode rejection ratio
VO = 0.25 V to 2 V,
RL = 10 kΩ
VIC = VICRmin
Supply-voltage
S
l
lt
rejection
j ti ratio
ti
(∆VDD /∆VDD)
VDD = 5 V to 10 V,
Supply current (two amplifiers)
VO = 2
2.5
5V
V,
No load
VO = 1.4 V
VIC = 2
2.5
5V
V,
0.23
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
mV
2
3
µV/°C
25°C to 70°C
1.8
25°C
0.1
60
70°C
7
300
25°C
0.6
60
70°C
40
600
25°C
– 0.2
to
4
Full range
– 0.2
to
3.5
– 0.3
to
4.2
pA
pA
V
V
25°C
3.2
3.8
0°C
3
3.8
70°C
3
3.8
V
25°C
0
50
0°C
0
50
0
50
25°C
5
23
0°C
4
27
70°C
4
20
25°C
65
80
0°C
60
84
70°C
60
85
25°C
65
95
0°C
60
94
70°C
60
96
mV
V/mV
dB
dB
25°C
1.4
3.2
0°C
1.6
3.6
70°C
1.2
2.6
† Full range is 0°C to 70°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
6
5
6.5
70°C
AVD
10
0.9
25°C
Common-mode input voltage
g
range (see Note 5)
High-level output voltage
1.1
UNIT
12
25°C
VO = 1.4 V,,
RS = 50 Ω,
Average temperature coefficient of
input offset voltage
MAX
Full range
TLC252AC
αVIO
VICR
25°C
TYP
mA
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B
TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y
LinCMOS DUAL OPERATIONAL AMPLIFIERS
SLOS002I – JUNE 1983 – REVISED MARCH 2001
electrical characteristics at specified free-air temperature, VDD = 10 V (unless otherwise noted)
PARAMETER
TA†
TEST CONDITIONS
TLC252C, TLC252AC,
TLC252BC
MIN
TLC252C
VIO
Input offset voltage
VO = 1.4 V,,
RS = 50 Ω,
VIC = 0,,
RL = 10 kΩ
Full range
TLC252BC
VO = 1.4 V,,
RS = 50 Ω,
VIC = 0,,
RL = 10 kΩ
Full range
IIO
Input offset current (see Note 4)
VO = 2
2.5
5V
V,
VIC = 2
2.5
5V
IIB
Input bias current (see Note 4)
VO = 2
2.5
5V
V,
VIC = 2
2.5
5V
VOH
VOL
Low-level output voltage
RL = 10 kΩ
VID = – 100 mV,
IOL = 0
0.29
CMRR
kSVR
IDD
Large-signal
L
i
l differential
diff
ti l voltage
lt
am
lification
amplification
Common-mode rejection ratio
VO = 1 V to 6 V,
RL = 10 kΩ
VIC = VICRmin
Supply-voltage
S
l
lt
rejection
j ti ratio
ti
(∆VDD /∆VDD)
VDD = 5 V to 10 V,
Supply current (two amplifiers)
VO = 5 V
V,
No load
VO = 1.4 V
VIC = 5 V,
V
mV
2
3
µV/°C
2
25°C
0.1
60
70°C
7
300
25°C
0.6
60
70°C
50
600
25°C
– 0.2
to
9
Full range
– 0.2
to
8.5
– 0.3
to
9.2
pA
pA
V
V
25°C
8
8.5
0°C
8
8.5
70°C
7.8
8.4
V
25°C
0
50
0°C
0
50
0
50
70°C
AVD
5
6.5
25°C to 70°C
VID = 100 mV,
10
0.9
25°C
Common-mode input voltage
g
range (see Note 5)
High-level output voltage
1.1
UNIT
12
25°C
VO = 1.4 V,,
RS = 50 Ω,
Average temperature coefficient of input
offset voltage
MAX
Full range
TLC252AC
αVIO
VICR
25°C
VIC = 0,,
RL = 10 kΩ
TYP
25°C
10
36
0°C
7.5
42
70°C
7.5
32
25°C
65
85
0°C
60
88
70°C
60
88
25°C
65
95
0°C
60
94
70°C
60
96
mV
V/mV
dB
dB
25°C
1.9
4
0°C
2.3
4.4
70°C
1.6
3.4
mA
† Full range is 0°C to 70°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
7
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B
TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y
LinCMOS DUAL OPERATIONAL AMPLIFIERS
SLOS002I – JUNE 1983 – REVISED MARCH 2001
operating characteristics, VDD = 5 V
PARAMETER
TEST CONDITIONS
TA
TLC252C, TLC252AC,
TLC252BC
MIN
VI(PP)
( )=1V
SR
Slew rate at unity gain
RL = 10 kΩ,,
See Figure 1
CL = 20 pF,,
VI(PP)
( ) = 2.5 V
Vn
BOM
B1
φm
Equivalent input noise voltage
Maximum output-swing bandwidth
Unity-gain bandwidth
Phase margin
f = 1 kHz,
VO = VOH,
See Figure
VI = 10 mV,
VI = 10 mV,
mV
See Figure 3
RS = 20 Ω,
F
CL = 20 pF,
CL = 20 pF,
f = B1,
See Figure 2
RL = 100 kΩ,
kΩ
See Figure 3
CL = 20 pF,
pF
TYP
25°C
3.6
0°C
4
70°C
3
25°C
2.9
0°C
3.1
70°C
2.5
25°C
25
25°C
320
0°C
340
70°C
260
25°C
1.7
0°C
2
70°C
1.3
25°C
46°
0°C
47°
70°C
43°
UNIT
MAX
V/µs
nV/√Hz
kHz
MHz
operating characteristics, VDD = 10 V
PARAMETER
TEST CONDITIONS
TA
TLC252C, TLC252AC,
TLC252BC
MIN
VI(PP)
( )=1V
SR
Slew rate at unity gain
RL = 10 kΩ,,
See Figure 1
CL = 20 pF,,
VI(PP)
( ) = 5.5 V
Vn
Equivalent input noise voltage
f = 1 kHz,
RS = 20 Ω,
See Figure 2
BOM
Maximum output-swing bandwidth
VO = VOH,
See Figure 1
CL = 20 pF,
F
RL = 100 kΩ,
kΩ
B1
φm
8
Unity-gain bandwidth
Phase margin
VI = 10 mV,
mV
VI = 10 mV,
See Figure 3
CL = 20 pF,
f = B1,
POST OFFICE BOX 655303
See Figure 3
pF
CL = 20 pF,
• DALLAS, TEXAS 75265
TYP
25°C
5.3
0°C
5.9
70°C
4.3
25°C
4.6
0°C
5.1
70°C
3.8
25°C
25
25°C
200
0°C
220
70°C
140
25°C
2.2
0°C
2.5
70°C
1.8
25°C
49°
0°C
50°
70°C
46°
UNIT
MAX
V/µs
nV/√Hz
kHz
MHz
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B
TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y
LinCMOS DUAL OPERATIONAL AMPLIFIERS
SLOS002I – JUNE 1983 – REVISED MARCH 2001
electrical characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted)
PARAMETER
TA†
TEST CONDITIONS
TLC25L2C
TLC25L2AC
TLC25L2BC
MIN
VIO
Input offset voltage
VO = 1.4 V,,
RS = 50 Ω,
VIC = 0,,
RL = 1 MΩ
Full range
TLC252AC
VO = 1.4 V,,
RS = 50 Ω,
VIC = 0,,
RL = 1 MΩ
Full range
TLC252BC
VO = 1.4 V,,
RS = 50 Ω,
VIC = 0,,
RL = 1 MΩ
αVIO
Average temperature coefficient of
input offset voltage
IIO
Input offset current (see Note 4)
VO = 2
2.5
5V
V,
VIC = 2
2.5
5V
IIB
Input bias current (see Note 4)
VO = 2
2.5
5V
V,
VIC = 2
2.5
5V
VICR
VOH
VOL
AVD
CMRR
kSVR
IDD
25°C
TLC252C
Low-level output voltage
Large-signal
L
i
l differential
diff
ti l voltage
lt
amplification
am
lification
Common-mode rejection ratio
VID = 100 mV,
VDD = 5 V to 10 V,
Supply current (two amplifiers)
VO = 2
2.5
5V
V,
No load
10
5
6.5
0.204
3
µV/°C
1.1
25°C
0.1
60
70°C
7
300
25°C
0.6
60
70°C
50
600
RL = 1 MΩ
VO = 1.4 V
VIC = 2
2.5
5V
V,
mV
2
25°C to 70°C
VIC = VICRmin
S
l
lt
j ti ratio
ti
Supply-voltage
rejection
(∆VDD /∆VDD)
1.1
Full range
IOL = 0
VO = 0.25 V to 2 V,
MAX
0.9
25°C
RL = 1 MΩ
VID = – 100 mV,
TYP
12
25°C
25°C
– 0.2
to
4
Full range
– 0.2
to
3.5
Common-mode input voltage
g
range (see Note 5)
High-level output voltage
UNIT
– 0.3
to
4.2
pA
pA
V
V
25°C
3.2
4.1
0°C
3
4.1
70°C
3
4.2
V
25°C
0
50
0°C
0
50
70°C
0
50
25°C
50
700
0°C
50
700
70°C
50
380
25°C
65
94
0°C
60
95
70°C
60
95
25°C
70
97
0°C
60
97
70°C
60
98
mV
V/mV
dB
dB
25°C
20
34
0°C
24
42
70°C
16
28
µA
† Full range is 0°C to 70°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
9
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B
TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y
LinCMOS DUAL OPERATIONAL AMPLIFIERS
SLOS002I – JUNE 1983 – REVISED MARCH 2001
electrical characteristics at specified free-air temperature, VDD = 10 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA†
TLC25L2C
TLC25L2AC
TLC25L2BC
MIN
VIO
Input offset voltage
VO = 1.4 V,,
RS = 50 Ω,
VIC = 0,,
RL = 1 MΩ
Full range
TLC252AC
VO = 1.4 V,,
RS = 50 Ω,
VIC = 0,,
RL = 1 MΩ
Full range
TLC252BC
VO = 1.4 V,,
RS = 50 Ω,
VIC = 0,,
RL = 1 MΩ
αVIO
Average temperature coefficient of
input offset voltage
IIO
Input offset current (see Note 4)
VO = 5 V
V,
VIC = 5 V
IIB
Input bias current (see Note 4)
VO = 5 V
V,
VIC = 5 V
VICR
VOH
VOL
AVD
CMRR
kSVR
IDD
25°C
TLC252C
Low-level output voltage
Large-signal
L
i
l differential
diff
ti l voltage
lt
amplification
am
lification
Common-mode rejection ratio
RL = 1 MΩ
VID = – 100 mV,
IOL = 0
VO = 1 V to 6 V,
RL = 1 MΩ
VIC = VICRmin
S
l
lt
j ti ratio
ti
Supply-voltage
rejection
(∆VDD /∆VDD)
VDD = 5 V to 10 V,
Supply current (two amplifiers)
VO = 5 V
V,
No load
VO = 1.4 V
VIC = 5 V,
V
MAX
1.1
10
0.9
25°C
0.235
Full range
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
mV
2
3
µV/°C
1
25°C
0.1
60
70°C
8
300
25°C
0.7
60
70°C
50
600
25°C
– 0.2
to
9
Full range
– 0.2
to
8.5
– 0.3
to
9.2
pA
pA
V
V
25°C
8
8.9
0°C
7.8
8.9
70°C
7.8
8.9
V
25°C
0
50
0°C
0
50
70°C
0
50
25°C
50
860
0°C
50
1025
70°C
50
660
25°C
65
97
0°C
60
97
70°C
60
97
25°C
70
97
0°C
60
97
70°C
60
98
mV
V/mV
dB
dB
25°C
29
46
0°C
36
66
70°C
22
40
† Full range is 0°C to 70°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
10
5
6.5
25°C to 70°C
VID = 100 mV,
TYP
12
25°C
Common-mode input voltage
g
range (see Note 5)
High-level output voltage
UNIT
µA
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B
TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y
LinCMOS DUAL OPERATIONAL AMPLIFIERS
SLOS002I – JUNE 1983 – REVISED MARCH 2001
operating characteristics, VDD = 5 V
PARAMETER
TEST CONDITIONS
TA
TLC25L2C
TLC25L2AC
TLC25L2BC
MIN
VI(PP)
( )=1V
SR
Slew rate at unity gain
RL = 1 MΩ,,
See Figure 1
CL = 20 pF,,
VI(PP)
( ) = 2.5 V
Vn
BOM
B1
φm
Equivalent input noise voltage
Maximum
M
i
output-swing
t t
i
bandwidth
Unity-gain bandwidth
Phase margin
f = 1 kHz,
VO = VOH,
See Figure
VI = 10 mV,
VI = 10 mV,
mV
See Figure 3
RS = 20 Ω,
CL = 20 pF,
F
CL = 20 pF,
f = B1,
See Figure 2
RL = 1 MΩ,
MΩ
See Figure 3
CL = 20 pF,
pF
TYP
25°C
0.03
0°C
0.04
70°C
0.03
25°C
0.03
0°C
0.03
70°C
0.02
25°C
68
25°C
5
0°C
6
70°C
4.5
25°C
85
0°C
100
70°C
65
25°C
34°
0°C
36°
70°C
30°
UNIT
MAX
V/µs
nV/√Hz
kHz
MHz
operating characteristics, VDD = 10 V
PARAMETER
TEST CONDITIONS
TA
TLC25L2C
TLC25L2AC
TLC25L2BC
MIN
VI(PP)
( )=1V
SR
Slew rate at unity gain
RL = 1 MΩ,,
See Figure 1
CL = 20 pF,,
VI(PP)
( ) = 5.5 V
Vn
Equivalent input noise voltage
f = 1 kHz,
RS = 20 Ω,
See Figure 2
BOM
Maximum
M
i
output-swing
t t
i
bandwidth
VO = VOH,
See Figure 1
CL = 20 pF,
F
RL = 1 MΩ,
MΩ
B1
φm
Unity-gain bandwidth
Phase margin
VI = 10 mV,
mV
VI = 10 mV,
See Figure 3
CL = 20 pF,
f = B1,
POST OFFICE BOX 655303
See Figure 3
pF
CL = 20 pF,
• DALLAS, TEXAS 75265
TYP
25°C
0.05
0°C
0.05
70°C
0.04
25°C
0.04
0°C
0.05
70°C
0.04
25°C
68
25°C
1
0°C
1.3
70°C
0.9
25°C
110
0°C
125
70°C
90
25°C
38°
0°C
40°
70°C
34°
UNIT
MAX
V/µs
nV/√Hz
kHz
MHz
11
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B
TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y
LinCMOS DUAL OPERATIONAL AMPLIFIERS
SLOS002I – JUNE 1983 – REVISED MARCH 2001
electrical characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA†
TLC25M2C
TLC25M2AC
TLC25M2BC
MIN
VIO
Input offset voltage
VO = 1.4 V,,
RS = 50 Ω,
VIC = 0,,
RL = 100 kΩ
Full range
TLC252AC
VO = 1.4 V,,
RS = 50 Ω,
VIC = 0,,
RL = 100 kΩ
Full range
TLC252BC
VO = 1.4 V,,
RS = 50 Ω,
VIC = 0,,
RL = 100 kΩ
αVIO
Average temperature coefficient of
input offset voltage
IIO
Input offset current (see Note 4)
VO = 2
2.5
5V
V,
VIC = 2
2.5
5V
IIB
Input bias current (see Note 4)
VO = 2
2.5
5V
V,
VIC = 2
2.5
5V
VICR
VOH
VOL
AVD
CMRR
kSVR
IDD
25°C
TLC252C
Low-level output voltage
Large-signal
L
i
l differential
diff
ti l voltage
lt
amplification
am
lification
Common-mode rejection ratio
VID = 100 mV,
RL = 100 kΩ
VID = – 100 mV,
IOL = 0
VO = 0.25 V to 2 V,
RL = 100 kΩ
VIC = VICRmin
S
l
lt
j ti ratio
ti
Supply-voltage
rejection
(∆VDD /∆VDD)
VDD = 5 V to 10 V,
Supply current (two amplifiers)
VO = 2
2.5
5V
V,
No load
VO = 1.4 V
VIC = 2
2.5
5V
V,
TYP
MAX
1.1
10
12
25°C
0.9
0.22
Full range
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
mV
2
3
µV/°C
25°C to 70°C
1.7
25°C
0.1
60
70°C
7
300
25°C
0.6
60
70°C
40
600
25°C
– 0.2
to
4
Full range
– 0.2
to
3.5
– 0.3
to
4.2
pA
pA
V
V
25°C
3.2
3.9
0°C
3
3.9
70°C
3
4
V
25°C
0
50
0°C
0
50
70°C
0
50
25°C
25
170
0°C
15
200
70°C
15
140
25°C
65
91
0°C
60
91
70°C
60
92
25°C
70
93
0°C
60
92
70°C
60
94
mV
V/mV
dB
dB
25°C
210
560
0°C
250
640
70°C
170
440
† Full range is 0°C to 70°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
12
5
6.5
25°C
Common-mode input voltage
g
range (see Note 5)
High-level output voltage
UNIT
µA
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B
TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y
LinCMOS DUAL OPERATIONAL AMPLIFIERS
SLOS002I – JUNE 1983 – REVISED MARCH 2001
electrical characteristics at specified free-air temperature, VDD = 10 V (unless otherwise noted)
PARAMETER
TA†
TEST CONDITIONS
TLC25M2C
TLC25M2AC
TLC25M2BC
MIN
VIO
Input offset voltage
VO = 1.4 V,,
RS = 50 Ω,
VIC = 0,,
RL = 100 kΩ
Full range
TLC252AC
VO = 1.4 V,,
RS = 50 Ω,
VIC = 0,,
RL = 100 kΩ
Full range
TLC252BC
VO = 1.4 V,,
RS = 50 Ω,
VIC = 0,,
RL = 100 kΩ
αVIO
Average temperature coefficient of
input offset voltage
IIO
Input offset current (see Note 4)
VO = 5 V
V,
VIC = 5 V
IIB
Input bias current (see Note 4)
VO = 5 V
V,
VIC = 5 V
VICR
VOH
VOL
AVD
CMRR
kSVR
IDD
25°C
TLC252C
Low-level output voltage
Large-signal
L
i
l differential
diff
ti l voltage
lt
amplification
am
lification
Common-mode rejection ratio
VID = 100 mV,
VID = – 100 mV,
VO = 1 V to 6 V,
VDD = 5 V to 10 V,
Supply current (two amplifiers)
VO = 5 V
V,
No load
MAX
1.1
10
0.9
5
6.5
25°C
0.224
Full range
3
µV/°C
2.1
25°C
0.1
60
70°C
7
300
25°C
0.7
60
70°C
50
600
RL = 100 kΩ
IOL = 0
RL = 100 kΩ
VO = 1.4 V
VIC = 5 V,
V
mV
2
25°C to 70°C
VIC = VICRmin
S
l
lt
j ti ratio
ti
Supply-voltage
rejection
(∆VDD /∆VDD)
TYP
12
25°C
25°C
– 0.2
to
9
Full range
– 0.2
to
8.5
Common-mode input voltage
g
range (see Note 5)
High-level output voltage
UNIT
– 0.3
to
9.2
pA
pA
V
V
25°C
8
8.7
0°C
7.8
8.7
70°C
7.8
8.7
V
25°C
0
50
0°C
0
50
70°C
0
50
25°C
25
275
0°C
15
320
70°C
15
230
25°C
65
94
0°C
60
94
70°C
60
94
25°C
70
93
0°C
60
92
70°C
60
94
mV
V/mV
dB
dB
25°C
285
600
0°C
345
800
70°C
220
560
µA
† Full range is 0°C to 70°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
13
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B
TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y
LinCMOS DUAL OPERATIONAL AMPLIFIERS
SLOS002I – JUNE 1983 – REVISED MARCH 2001
operating characteristics, VDD = 5 V
PARAMETER
TEST CONDITIONS
TA
TLC25M2C
TLC25M2AC
TLC25M2BC
MIN
VI(PP)
( )=1V
SR
Slew rate at unity gain
RL = 100 kΩ,,
See Figure 1
CL = 20 pF,,
VI(PP)
( ) = 2.5 V
Vn
BOM
B1
φm
Equivalent input noise voltage
Maximum output-swing bandwidth
Unity-gain bandwidth
Phase margin
f = 1 kHz,
VO = VOH,
See Figure
VI = 10 mV,
VI = 10 mV,
mV
See Figure 3
RS = 20 Ω,
CL = 20 pF,
F
CL = 20 pF,
f = B1,
See Figure 2
RL = 100 kΩ,
kΩ
See Figure 3
CL = 20 pF,
pF
TYP
25°C
0.43
0°C
0.46
70°C
0.36
25°C
0.40
0°C
0.43
70°C
0.34
25°C
32
25°C
55
0°C
60
70°C
50
25°C
525
0°C
600
70°C
400
25°C
40°
0°C
41°
70°C
39°
UNIT
MAX
V/µs
nV/√Hz
kHz
MHz
operating characteristics, VDD = 10 V
PARAMETER
TEST CONDITIONS
TA
TLC25M2C
TLC25M2AC
TLC25M2BC
MIN
VI(PP)
( )=1V
SR
Slew rate at unity gain
RL = 100 kΩ,,
See Figure 1
CL = 20 pF,,
VI(PP)
( ) = 5.5 V
Vn
Equivalent input noise voltage
f = 1 kHz,
RS = 20 Ω,
See Figure 2
BOM
Maximum output-swing bandwidth
VO = VOH,
See Figure 1
CL = 20 pF,
F
RL = 100 kΩ,
kΩ
B1
φm
14
Unity-gain bandwidth
Phase margin
VI = 10 mV,
mV
VI = 10 mV,
See Figure 3
CL = 20 pF,
f = B1,
POST OFFICE BOX 655303
See Figure 3
pF
CL = 20 pF,
• DALLAS, TEXAS 75265
TYP
25°C
0.62
0°C
0.67
70°C
0.51
25°C
0.56
0°C
0.61
70°C
0.46
25°C
32
25°C
35
0°C
40
70°C
30
25°C
635
0°C
710
70°C
510
25°C
43°
0°C
44°
70°C
42°
UNIT
MAX
V/µs
nV/√Hz
kHz
MHz
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B
TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y
LinCMOS DUAL OPERATIONAL AMPLIFIERS
SLOS002I – JUNE 1983 – REVISED MARCH 2001
electrical characteristics, VDD = 5 V, TA = 25°C
PARAMETER
TEST CONDITIONS
VO = 1.4 V,
RS = 50 Ω,
TLC252Y
MIN
VIC = 0 V,
See Note 6
TLC25L2Y
TYP
MAX
1.1
10
MIN
TLC25M2Y
TYP
MAX
1.1
10
MIN
TYP
MAX
1.1
10
UNIT
VIO
Input offset voltage
αVIO
Average temperature
coefficient of input
offset voltage
IIO
Input offset current
(see Note 4)
VO = VDD/2, VIC = VDD/2
0.1
60
0.1
60
0.1
60
pA
IIB
Input bias current
(see Note 4)
VO = VDD/2, VIC = VDD/2
0.6
60
0.6
60
0.6
60
pA
VICR
Common-mode input
voltage range
(see Note 5)
VOH
High-level output
voltage
VID = 100 mV, See Note 6
VOL
Low-level output
voltage
VID = – 100 mV, IOL = 0
AVD
Large-signal
differential voltage
amplification
VO = 0.25 V, See Note 6
CMRR
Common-mode
rejection ratio
kSVR
IDD
1.8
1.1
mV
µV/°C
1.7
– 0.2
to
4
– 0.3
to
4.2
– 0.2
to
4
– 0.3
to
4.2
– 0.2
to
4
– 0.3
to
4.2
V
3.2
3.8
3.2
4.1
3.2
3.9
V
0
50
0
50
0
50
mV
5
23
50
700
25
170
V/mV
VIC = VICRmin
65
80
65
94
65
91
dB
Supply-voltage
rejection ratio
(∆VDD /∆VIO)
VDD = 5 V to 10 V,
VO = 1.4 V
65
95
70
97
70
93
dB
Supply current
VO = VDD/2,
VIC = VDD/2, No load
1.4
3.2
0.02
0.034
0.21
0.56
mA
operating characteristics, VDD = 5 V, TA = 25°C
PARAMETER
TEST CONDITIONS
TLC252Y
MIN
TYP
TLC25L2Y
MAX
MIN
TYP
TLC25M2Y
MAX
MIN
TYP
MAX
UNIT
Slew rate at
unity gain
CL = 20 pF,,
See Note 6
VI(PP) = 1 V
VI(PP) = 2.5 V
3.6
0.03
0.43
2.9
0.03
0.40
Vn
Equivalent input
noise voltage
f = 1 kHz,
RS = 20 Ω
2.5
68
32
nV√/Hz
BOM
Maximum outputswing bandwidth
VO = VOH,
RL = 10 kΩ
CL = 20 pF,
320
5
55
kHz
B1
Unity-gain
bandwidth
VI = 10 mV,
CL = 20 pF
1.7
0.085
0.525
MHz
φm
Phase margin
f = B1,
CL = 20 pF
VI = 10 mV,
46°
34°
40°
V/µs
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
6. For low-bias mode, RL = 1 MΩ; for medium-bias mode, RL = 100 kΩ, and for high-bias mode, RL = 10 kΩ.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
15
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B
TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y
LinCMOS DUAL OPERATIONAL AMPLIFIERS
SLOS002I – JUNE 1983 – REVISED MARCH 2001
PARAMETER MEASUREMENT INFORMATION
single-supply versus split-supply test circuits
Because the TLC252, TLC25L2, and TLC25M2 are optimized for single-supply operation, circuit configurations
used for the various tests often present some inconvenience since the input signal, in many cases, must be
offset from ground. This inconvenience can be avoided by testing the device with split supplies and the output
load tied to the negative rail. A comparison of single-supply versus split-supply test circuits is shown below. The
use of either circuit gives the same result.
VDD +
VDD
–
–
VO
VI
+
CL
VO
VI
+
CL
RL
RL
VDD –
(a) SINGLE SUPPLY
(b) SPLIT SUPPLY
Figure 1. Unity-Gain Amplifier
2 kΩ
2 kΩ
VDD
VDD
20 Ω
–
–
VO
1/2 VDD
VO
+
+
20 Ω
20 Ω
20 Ω
VDD–
(a) SPLIT SUPPLY
(a) SINGLE SUPPLY
Figure 2. Noise-Test Circuit
10 kΩ
10 kΩ
VDD+
VDD
100 Ω
VI
VI
100 Ω
VO
+
VO
1/2 VDD
–
–
CL
+
CL
VDD–
(a) SINGLE SUPPLY
(a) SPLIT SUPPLY
Figure 3. Gain-of-100 Inverting Amplifier
16
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B
TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y
LinCMOS DUAL OPERATIONAL AMPLIFIERS
SLOS002I – JUNE 1983 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
IDD
Supply current
AVD
Large-signal differential voltage amplification
Phase shift
vs Supplyy voltage
g
vs Free-air temperature
4
5
Low bias
vs Frequency
6
Medium bias
vs Frequency
7
High bias
vs Frequency
8
Low bias
vs Frequency
6
Medium bias
vs Frequency
7
High bias
vs Frequency
8
SUPPLY CURRENT
vs
FREE-AIR TEMPERATURE
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
10000
10000
High-Bias Versions
1000
Medium-Bias Versions
100
Low-Bias Versions
10
1000
Medium-Bias Versions
100
Low-Bias Versions
10
0
0
0
2
4
6
8
VDD = 10 V
VIC = 0 V
VO = 2 V
No Load
High-Bias Versions
I DD – Supply Current – µ A
I DD – Supply Current – µ A
VO = VIC = 0.2 VDD
No Load
TA = 25°C
10
12
14
16
18
20
0
10
20
30
40
50
60
70
80
TA – Free-Air Temperature – °C
VDD – Supply Voltage – V
Figure 4
Figure 5
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
17
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B
TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y
LinCMOS DUAL OPERATIONAL AMPLIFIERS
SLOS002I – JUNE 1983 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS
LOW-BIAS LARGE-SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
AND PHASE SHIFT
vs
FREQUENCY
VDD = 10 V
RL = 1 MΩ
TA = 25°C
106
105
30°
AVD (left scale)
104
60°
103
90°
Phase Shift
(right scale)
102
ÁÁ
ÁÁ
ÁÁ
0°
120°
101
150°
1
180°
Phase Shift
AVD
AVD – Low-Bias Large-Signal Differential
Voltage Amplification
107
0.1
0.1
1
10
100
1k
10 k
100 k
Frequency – Hz
Figure 6
MEDIUM-BIAS LARGE-SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
AND PHASE SHIFT
vs
FREQUENCY
ÁÁ
ÁÁ
VDD = 10 V
RL = 100 kΩ
TA = 25°C
106
105
30°
AVD (left scale)
104
60°
103
90°
Phase Shift
(right scale)
102
120°
101
150°
1
180°
0.1
1
10
100
1k
10 k
100 k
Frequency – Hz
Figure 7
18
0°
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
1M
Phase Shift
AVD
A
VD – Medium-Bias Large-Signal Differential
Voltage Amplification
107
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B
TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y
LinCMOS DUAL OPERATIONAL AMPLIFIERS
SLOS002I – JUNE 1983 – REVISED MARCH 2001
TYPICAL CHARACTERISTICS
HIGH-BIAS LARGE-SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
AND PHASE SHIFT
vs
FREQUENCY
ÁÁ
ÁÁ
VDD = 10 V
RL = 10 kΩ
TA = 25°C
106
105
0°
30°
104
60°
Phase Shift (right scale)
103
90°
102
120°
Phase Shift
AVD
AVD – High-Bias Large-Signal Differential
Voltage Amplification
107
AVD (left scale)
101
150°
1
180°
0.1
10
100
1k
10 k
100 k
1M
10 M
Frequency – Hz
Figure 8
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
19
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B
TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y
LinCMOS DUAL OPERATIONAL AMPLIFIERS
SLOS002I – JUNE 1983 – REVISED MARCH 2001
APPLICATION INFORMATION
latch-up avoidance
Junction-isolated CMOS circuits have an inherent parasitic PNPN structure that can function as an SCR. Under
certain conditions, this SCR may be triggered into a low-impedance state, resulting in excessive supply current.
To avoid such conditions, no voltage greater than 0.3 V beyond the supply rails should be applied to any pin.
In general, the operational amplifier supplies should be applied simultaneously with, or before, application of
any input signals.
output stage considerations
The amplifier’s output stage consists of a source-follower-connected pullup transistor and an open-drain
pulldown transistor. The high-level output voltage (VOH) is virtually independent of the IDD selection and
increases with higher values of VDD and reduced output loading. The low-level output voltage (VOL) decreases
with reduced output current and higher input common-mode voltage. With no load, VOL is essentially equal to
the potential of VDD – /GND.
supply configurations
Even though the TLC252 / 25_2C series is characterized for single-supply operation, it can be used effectively
in a split-supply configuration if the input common-mode voltage (VICR), output swing (VOL and VOH), and supply
voltage limits are not exceeded.
circuit layout precautions
The user is cautioned that whenever extremely high circuit impedances are used, care must be exercised in
layout, construction, board cleanliness, and supply filtering to avoid hum and noise pickup, as well as excessive
dc leakages.
20
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
PACKAGE OPTION ADDENDUM
www.ti.com
26-Aug-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
TLC252ACD
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
252AC
TLC252ACDG4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
252AC
TLC252ACP
OBSOLETE
SOIC
D
8
TBD
Call TI
Call TI
TLC252BCD
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
252BC
TLC252BCDG4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
252BC
TLC252BCP
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
TLC252BCP
TLC252BCPE4
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
TLC252BCP
TLC252CD
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
252C
TLC252CDG4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
252C
TLC252CDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
252C
TLC252CDRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
252C
TLC252CP
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
TLC252CP
TLC252CPE4
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
TLC252CP
TLC252CPWR
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
P252
TLC252CPWRG4
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
P252
TLC25L2ACD
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
25L2AC
TLC25L2ACDG4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
25L2AC
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
26-Aug-2013
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
TLC25L2BCD
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
25L2BC
TLC25L2BCDG4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
25L2BC
TLC25L2BCDR
PREVIEW
SOIC
D
8
TBD
Call TI
Call TI
TLC25L2BCP
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
0 to 70
TLC25L2BC
TLC25L2BCPE4
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
0 to 70
TLC25L2BC
TLC25L2CD
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
25L2C
TLC25L2CDG4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
25L2C
TLC25L2CDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
25L2C
TLC25L2CDRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
25L2C
TLC25L2CP
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
TLC25L2CP
TLC25L2CPE4
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
TLC25L2CP
TLC25L2CPSR
OBSOLETE
SO
PS
8
TBD
Call TI
Call TI
TLC25L2CPSRG4
OBSOLETE
SO
PS
8
TBD
Call TI
Call TI
TLC25L2CPWRG4
OBSOLETE
TSSOP
PW
8
TBD
Call TI
Call TI
TLC25M2ACD
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
25M2AC
TLC25M2ACDG4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
25M2AC
TLC25M2ACP
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
TLC25M2AC
TLC25M2ACPE4
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
TLC25M2AC
TLC25M2BCD
OBSOLETE
SOIC
D
8
TBD
Call TI
Call TI
TLC25M2BCP
OBSOLETE
PDIP
P
8
TBD
Call TI
Call TI
Addendum-Page 2
P25L2
P25L2
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
26-Aug-2013
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
TLC25M2CD
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
25M2C
TLC25M2CDG4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
25M2C
TLC25M2CDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
25M2C
TLC25M2CDRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 70
25M2C
TLC25M2CP
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
0 to 70
TLC25M2CP
TLC25M2CPE4
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
0 to 70
TLC25M2CP
TLC25M2CPWLE
OBSOLETE
TSSOP
PW
8
TBD
Call TI
Call TI
0 to 70
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Addendum-Page 3
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
26-Aug-2013
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 4
PACKAGE MATERIALS INFORMATION
www.ti.com
17-Aug-2012
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
TLC252CDR
Package Package Pins
Type Drawing
SOIC
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
D
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
TLC252CDR
SOIC
D
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
TLC252CPWR
TSSOP
PW
8
2000
330.0
12.4
7.0
3.6
1.6
8.0
12.0
Q1
TLC25L2CDR
SOIC
D
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
TLC25L2CPWR
TSSOP
PW
8
2000
330.0
12.4
7.0
3.6
1.6
8.0
12.0
Q1
TLC25M2CDR
SOIC
D
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
17-Aug-2012
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TLC252CDR
SOIC
D
8
2500
340.5
338.1
20.6
TLC252CDR
SOIC
D
8
2500
367.0
367.0
35.0
TLC252CPWR
TSSOP
PW
8
2000
367.0
367.0
35.0
TLC25L2CDR
SOIC
D
8
2500
340.5
338.1
20.6
TLC25L2CPWR
TSSOP
PW
8
2000
367.0
367.0
35.0
TLC25M2CDR
SOIC
D
8
2500
340.5
338.1
20.6
Pack Materials-Page 2
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