TPD1E04U04DPLR

Product Folder Order Now Support & Community Tools & Software Technical Documents TPD1E04U04 SLVSDG4B – MARCH 2016 – REVISED AUGUST 2016 TPD1E04U04 1-Channel ESD Protection Diode with Low RDYN for HDMI 2.0 and USB 3.0 1 Features 3 Description • The TPD1E04U04 is a unidirectional TVS ESD protection diode for HDMI 2.0 and USB 3.0 circuit protection. The TPD1E04U04 is rated to dissipate ESD strikes above the maximum level specified in the IEC 61000-4-2 international standard (Level 4). • • • • • • • • • • IEC 61000-4-2 Level 4 ESD Protection – ±16-kV Contact Discharge – ±16-kV Air Gap Discharge IEC 61000-4-4 EFT Protection – 80 A (5/50 ns) IEC 61000-4-5 Surge Protection – 2.5 A (8/20 µs) IO Capacitance: 0.5-pF (Typ), 0.65-pF (Max) Ultra-low ESD Clamping Voltage – 8.9 V at 16-A TLP – –4.6 V at –16-A TLP Low RDYN – 0.25 Ω IO to GND – 0.18 Ω GND to IO DC Breakdown Voltage: 5 V (Minimum) Ultra-low Leakage Current: 10 nA (Maximum) Supports High Speed Interfaces up to 6 Gbps Industrial Temperature Range: –40°C to +125°C Industry Standard 0402 and 0201 Packages This device features a 0.5-pF IO capacitance making it ideal for protecting high-speed interfaces up to 6 Gbps such as HDMI 2.0 and USB 3.0. The low dynamic resistance and ultra-low clamping voltage ensure system level protection against transient events for sensitive SoCs. The TPD1E04U04 is offered in the industry standard 0402 (DPY) and 0201 (DPL) packages. Device Information(1) PART NUMBER PACKAGE BODY SIZE (NOM) TPD1E04U04 X1SON (2) 0.60 mm × 1.00 mm TPD1E04U04 X2SON (2) 0.60 mm × 0.30 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Typical HDMI 2.0 Application 2 Applications TMDS_D2+ • TMDS_D1+ • TMDS_D2- TMDS_D1TMDS_D0+ HDMI Controller End Equipment – Set-Top Boxes – Laptops and Desktops – TV and Monitors – Mobile and Tablets – DVR and NVR Interfaces – HDMI 2.0 – HDMI 1.4b – USB 3.0 – DisplayPort 1.2 – PCI Express 3.0 TMDS_D0TMDS_CK+ TMDS_CK- HDMI Connector 1 CEC UTILITY DDC_CLK DDC_DAT HOTPLUG_DET 1 1 1 2 2 2 1 1 1 1 2 2 2 2 TPD1E04U04 (x8) GND 1 1 1 2 2 2 1 1 1 2 2 2 TPD1E05U06 (x5) Copyright © 2016, Texas Instruments Incorporated 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. TPD1E04U04 SLVSDG4B – MARCH 2016 – REVISED AUGUST 2016 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 4 6.1 6.2 6.3 6.4 6.5 6.6 6.7 4 4 4 4 4 5 6 Absolute Maximum Ratings ...................................... ESD Ratings ............................................................ ESD Ratings—IEC Specification ............................. Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Typical Characteristics .............................................. Detailed Description .............................................. 9 7.1 Overview ................................................................... 9 7.2 Functional Block Diagram ......................................... 9 7.3 Feature Description................................................... 9 7.4 Device Functional Modes........................................ 10 8 Application and Implementation ........................ 11 8.1 Application Information............................................ 11 8.2 Typical Application ................................................. 11 9 Power Supply Recommendations...................... 13 10 Layout................................................................... 13 10.1 Layout Guidelines ................................................. 13 10.2 Layout Example .................................................... 14 11 Device and Documentation Support ................. 15 11.1 11.2 11.3 11.4 11.5 11.6 Documentation Support ....................................... Receiving Notification of Documentation Updates Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 15 15 15 15 15 15 12 Mechanical, Packaging, and Orderable Information ........................................................... 15 4 Revision History Changes from Revision A (April 2016) to Revision B Page • Added new DPL package ....................................................................................................................................................... 1 • Added DPL Package information in the Absolute Maximum Ratings table............................................................................ 4 • Added Thermal information for DPL package in the Thermal Information table .................................................................... 4 • Changed Vbr min spec from 5 V to 4.5 V in the Electrical Characteristics table ................................................................... 5 Changes from Original (March 2016) to Revision A • 2 Page Changed device status from Product Preview to Production Data ....................................................................................... 1 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TPD1E04U04 TPD1E04U04 www.ti.com SLVSDG4B – MARCH 2016 – REVISED AUGUST 2016 5 Pin Configuration and Functions DPL Package 2-Pin X2SON Top View 1 2 DPY Package 2-Pin X1SON Top View 1 2 Pin Functions PIN NO. NAME TYPE 1 IO I/O 2 GND Ground DESCRIPTION ESD Protected Channel Ground. Connect to ground Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TPD1E04U04 3 TPD1E04U04 SLVSDG4B – MARCH 2016 – REVISED AUGUST 2016 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN Electrical fast transient Peak pulse MAX UNIT IEC 61000-4-4 (5/50 ns) 80 A IEC 61000-4-5 power (tp - 8/20 µs) - DPY Package 19 W IEC 61000-4-5 power (tp - 8/20 µs) - DPL Package 16 W 2.5 A TA IEC 61000-4-5 current (tp - 8/20 µs) Operating free-air temperature –40 125 °C Tstg Storage temperature –65 155 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6.2 ESD Ratings VALUE V(ESD) (1) (2) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±2500 Charged-device model (CDM), per JEDEC specification JESD22C101 (2) ±1000 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 ESD Ratings—IEC Specification VALUE V(ESD) Electrostatic discharge IEC 61000-4-2 contact discharge ±16000 IEC 61000-4-2 air-gap discharge ±16000 UNIT V 6.4 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN VIO Input pin voltage TA Operating free-air temperature MAX UNIT 0 3.6 V –40 125 °C 6.5 Thermal Information THERMAL METRIC (1) TPD1E04U04 TPD1E04U04 DPY (X1SON) DPL (X2SON) 2 PINS 2 PINS UNIT RθJA Junction-to-ambient thermal resistance 683.6 574 °C/W RθJC(top) Junction-to-case (top) thermal resistance 494.2 332.2 °C/W RθJB Junction-to-board thermal resistance 568.7 237.6 °C/W ψJT Junction-to-top characterization parameter 217.4 150.2 °C/W ψJB Junction-to-board characterization parameter 568.7 238.2 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A N/A °C/W (1) 4 For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TPD1E04U04 TPD1E04U04 www.ti.com SLVSDG4B – MARCH 2016 – REVISED AUGUST 2016 6.6 Electrical Characteristics over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP 4.5 6.2 MAX UNIT VRWM Reverse stand-off voltage IIO < 10 nA VBR Breakdown voltage, IO pin to GND TA = 25°C (1) VF Forward diode voltage, GND to IO pin IIO = 1 mA, TA = 25°C 0.8 V VHOLD Holding voltage IIO = 1 mA 5.3 V IPP = 1 A, TLP, from IO to GND 5.3 IPP = 16 A, TLP, from IO to GND 8.9 IPP = 1 A, TLP, from GND to IO 1.3 IPP = 16 A, TLP, from GND to IO 4.6 VCLAMP Clamping voltage ILEAK Leakage current, any IO to GND RDYN CL (1) Dynamic resistance Line capacitance VIO = 2.5 V 0.1 IO to GND 0.25 GND to IO 0.18 VIO = 0 V, f = 1 MHz, IO to GND, TA = 25°C 0.5 3.6 V 7.5 V V 10 nA Ω 0.65 pF Measured as the maximum voltage before device snaps back into VHOLD voltage. Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TPD1E04U04 5 TPD1E04U04 SLVSDG4B – MARCH 2016 – REVISED AUGUST 2016 www.ti.com 30 30 25 25 20 20 Current (A) Current (A) 6.7 Typical Characteristics 15 10 15 10 5 5 0 0 -5 -5 0 2 4 6 8 Voltage (V) 10 12 0 14 1 2 3 D012 Figure 1. Positive TLP Curve 4 5 Voltage (V) 6 7 8 D014 Figure 2. Negative TLP Curve 50 5 45 0 40 -5 35 -10 Voltage (V) Voltage (V) 30 25 20 15 10 -15 -20 -25 -30 5 -35 0 -40 -5 -10 -10 0 10 20 30 40 50 Time (ns) 60 70 80 90 -45 -10 100 0 10 Figure 3. 8-kV IEC Waveform 30 40 50 Time (ns) 60 70 80 90 100 D007 Figure 4. –8-kV IEC Waveform 0.8 3 Power Current 2.7 16 2.4 14 2.1 12 1.8 10 1.5 8 1.2 6 0.9 4 0.6 2 0.3 0.7 0.6 Capacitance (pF) 18 Current (A) 20 Power (W) 20 D006 0.5 0.4 0.3 0.2 0 -5 0 5 10 15 20 25 30 Time (µs) 35 40 45 50 0 55 -40qC 25qC 125qC 0.1 0 0 0.4 D010 Figure 5. Surge Curve (tp = 8/20µs), IO Pin to GND 6 Submit Documentation Feedback 0.8 1.2 1.6 2 2.4 Voltage Bias (V) 2.8 3.2 3.6 D011 Figure 6. Capacitance vs Bias Voltage Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TPD1E04U04 TPD1E04U04 www.ti.com SLVSDG4B – MARCH 2016 – REVISED AUGUST 2016 Typical Characteristics (continued) 1000 1 0.8 0.6 0.4 Current (mA) Leakage Current (pA) 800 600 400 0.2 0 -0.2 -0.4 200 -0.6 -0.8 0 -40 -25 -10 5 20 35 50 65 Temperature (qC) 80 95 -1 -1 110 125 0 D017 Figure 7. Leakage Current vs Temperature VBIAS = 0 V VBIAS = 1.8 V VBIAS = 3.3 V Insertion Loss (dB) Capacitance (pF) 0.6 0.5 0.4 0.3 0.2 0.1 0 1G 2G 3G 4G 5G 6G 7G Frequency (Hz) 8G 9G 2 3 Voltage (V) 4 5 6 D009 Figure 8. DC Voltage Sweep I-V Curve 0.8 0.7 1 10G 1 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 -11 -12 50M 100M D016 Figure 9. Capacitance vs Frequency 1G Frequency (Hz) 10G D008 Figure 10. Insertion Loss Figure 11. HDMI2.0 6-Gbps TP2 Eye Diagram (Bare Board) Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TPD1E04U04 7 TPD1E04U04 SLVSDG4B – MARCH 2016 – REVISED AUGUST 2016 www.ti.com Typical Characteristics (continued) Figure 12. HDMI2.0 6-Gbps TP2 Eye Diagram (With TPD1E04U04) 8 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TPD1E04U04 TPD1E04U04 www.ti.com SLVSDG4B – MARCH 2016 – REVISED AUGUST 2016 7 Detailed Description 7.1 Overview The TPD1E04U04 is a unidirectional ESD Protection Diode with ultra-low capacitance designed for HDMI 2.0 and USB 3.0. This device can dissipate ESD strikes above the maximum level specified by the IEC 61000-4-2 International Standard. The extremely low clamping voltage and low RDYN make this device ideal for supporting the next-generation small feature size SoCs. The low capacitance also makes this device ideal for protecting any high-speed signal pins on these sensitive interface pins. 7.2 Functional Block Diagram I/O GND 7.3 Feature Description 7.3.1 IEC 61000-4-2 ESD Protection The IO pins can withstand ESD events up to ±16-kV contact and ±16-kV air gap. An ESD-surge clamp diverts the current to ground. 7.3.2 IEC 61000-4-4 EFT Protection The IO pins can withstand an electrical fast transient burst of up to 80 A (5/50 ns waveform, 4 kV with 50-Ω impedance). An ESD-surge clamp diverts the current to ground. 7.3.3 IEC 61000-4-5 Surge Protection The IO pins can withstand surge events up to 2.5 A and 19 W (8/20 µs waveform). An ESD-surge clamp diverts this current to ground. 7.3.4 IO Capacitance The capacitance between each IO pin to ground is 0.5-pF (typical) and 0.65-pF (maximum). This device supports data rates up to 6 Gbps. 7.3.5 Ultra-Low ESD Clamping Voltage The IO pins feature an ESD clamp that is capable of clamping the voltage to 8.9 V (ITLP = 16 A) and –4.6 V (ITLP = –16 A). 7.3.6 Low RDYN The IO pins feature an ESD clamp that has an extremely low RDYN of 0.25 Ω (IO to GND) and 0.18 Ω (GND to IO) which prevents system damage during ESD events. 7.3.7 DC Breakdown Voltage The DC breakdown voltage of each IO pin is a minimum of 5 V. This ensures that sensitive equipment is protected from surges above the reverse standoff voltage of 3.6 V. Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TPD1E04U04 9 TPD1E04U04 SLVSDG4B – MARCH 2016 – REVISED AUGUST 2016 www.ti.com Feature Description (continued) 7.3.8 Ultra Low Leakage Current The IO pins feature an ultra-low leakage current of 10 nA (maximum) with a bias of 2.5 V. 7.3.9 Supports High Speed Interfaces This device is capable of supporting high speed interfaces up to 6 Gbps, because of the very low IO capacitance. 7.3.10 Industrial Temperature Range This device features an industrial operating range of –40°C to +125°C. 7.3.11 Easy Flow-Through Routing Package The layout of this device makes it simple and easy to add protection to an existing layout. The packages offers flow-through routing, requiring minimal modification to an existing layout. 7.4 Device Functional Modes The TPD1E04U04 is a passive integrated circuit that triggers when voltages are above VBR or below VF. During ESD events, voltages as high as ±16-kV (air) can be directed to ground via the internal diode network. When the voltages on the protected line fall below the trigger levels of TPD1E04U04 (usually within 10s of nano-seconds) the device reverts to passive. 10 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TPD1E04U04 TPD1E04U04 www.ti.com SLVSDG4B – MARCH 2016 – REVISED AUGUST 2016 8 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 8.1 Application Information The TPD1E04U04 is a diode type TVS which is used to provide a path to ground for dissipating ESD events on high-speed signal lines between a human interface connector and a system. As the current from ESD passes through the TVS, only a small voltage drop is present across the diode. This is the voltage presented to the protected IC. The low RDYN of the triggered TVS holds this voltage, VCLAMP, to a safe level for the protected IC. 8.2 Typical Application TMDS_D2+ TMDS_D2TMDS_D1+ TMDS_D1- TMDS_D0TMDS_CK+ TMDS_CK- HDMI Connector HDMI Controller TMDS_D0+ CEC UTILITY DDC_CLK DDC_DAT HOTPLUG_DET 1 1 1 1 1 1 1 1 1 1 1 1 1 2 2 2 2 2 2 2 2 2 2 2 2 2 TPD1E04U04 (x8) GND TPD1E05U06 (x5) Copyright © 2016, Texas Instruments Incorporated Figure 13. HDMI 2.0 ESD Schematic 8.2.1 Design Requirements For this design example eight TPD1E04U04 devices and five TPD1E05U06 devices are being used in a HDMI 2.0 application. This provides a complete ESD protection scheme. Given the HDMI 2.0 application, the parameters listed in Table 1 are known. Table 1. Design Parameters DESIGN PARAMETER VALUE Signal range on TMDS lines 0 V to 3.6 V Operating frequency on TMDS lines up to 3 GHz Signal range on control lines 0 V to 5.5 V Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TPD1E04U04 11 TPD1E04U04 SLVSDG4B – MARCH 2016 – REVISED AUGUST 2016 www.ti.com 8.2.2 Detailed Design Procedure 8.2.2.1 Signal Range The TPD1E04U04 supports signal ranges between 0 V and 3.6 V, which supports the TMDS pairs on the HDMI 2.0 application. The TPD1E05U06 supports signal ranges between 0 V and 5.5 V, which supports the control lines. 8.2.2.2 Operating Frequency The TPD1E04U04 has a 0.5-pF (typical) capacitance, which supports the HDMI 2.0 data rates of 6-Gbps. The TPD1E05U06 has a 0.5-pF (typical) capacitance as well, which easily supports the control line data rates. 8.2.3 Application Curves Figure 14. HDMI2.0 6-Gbps TP2 Eye Diagram (Bare Board) Figure 15. HDMI2.0 6-Gbps TP2 Eye Diagram (With TPD1E04U04) 12 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TPD1E04U04 TPD1E04U04 www.ti.com SLVSDG4B – MARCH 2016 – REVISED AUGUST 2016 9 Power Supply Recommendations This device is a passive ESD device so there is no need to power it. Take care not to violate the recommended IO specification (0 V to 3.6 V) to ensure the device functions properly. 10 Layout 10.1 Layout Guidelines • • • The optimum placement is as close to the connector as possible. – EMI during an ESD event can couple from the trace being struck to other nearby unprotected traces, resulting in early system failures. – The PCB designer must minimize the possibility of EMI coupling by keeping any unprotected traces away from the protected traces which are between the TVS and the connector. Route the protected traces as straight as possible. Eliminate any sharp corners on the protected traces between the TVS and the connector by using rounded corners with the largest radii possible. – Electric fields tend to build up on corners, increasing EMI coupling. Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TPD1E04U04 13 TPD1E04U04 SLVSDG4B – MARCH 2016 – REVISED AUGUST 2016 www.ti.com 10.2 Layout Example Legend Top Layer VIA to GND Plane TPD1E04U04 (x8) GND TMDS_D2+ GND TMDS_D2TMDS_D1+ GND TMDS_D1TMDS_D0+ GND TMDS_D0TMDS_CK+ GND TMDS_CKCEC UTILITY DDC_CLK DDC_DAT GND 5V_OUT HOTPLUG_DET TMDS_D2+ TMDS_D2GND TMDS_D1+ TMDS_D1GND TMDS_D0+ TMDS_D0GND TMDS_CK+ TMDS_CKGND CEC UTILITY GND DDC_CLK DDC_DAT GND 5V_SUPPLY HOTPLUG_DET GND TPD1E05U06 (x5) Figure 16. HDMI2.0 Type-A Transmitter Port ESD Layout 14 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TPD1E04U04 TPD1E04U04 www.ti.com SLVSDG4B – MARCH 2016 – REVISED AUGUST 2016 11 Device and Documentation Support 11.1 Documentation Support 11.1.1 Related Documentation For related documentation see the following: • TPD1E04U04 Evaluation Module User's Guide • Picking ESD Diodes for Ultra High-Speed Data Lines 11.2 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document. 11.3 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 11.4 Trademarks E2E is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. 11.5 Electrostatic Discharge Caution This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 11.6 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 12 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TPD1E04U04 15 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) TPD1E04U04DPLR ACTIVE X2SON DPL 2 15000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 K TPD1E04U04DPLT ACTIVE X2SON DPL 2 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 K TPD1E04U04DPYR ACTIVE X1SON DPY 2 10000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 3K TPD1E04U04DPYT ACTIVE X1SON DPY 2 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 3K (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of