CHT5551ZPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN SILICON Transistor V OLTAGE 160 Volts APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. C HT5551ZPT CURRENT 0.6 Ampere FEATURE * Small flat package. ( SC-73/SOT-223 ) * Suitable for high packing density. 6.50+0.20 3.00+0.10 SC-73/SOT-223 1.65+0.15 0.90+0.05 2.0+0.3 CONSTRUCTION 3.5+0.2 7.0+0.3 *NPN SILICON Transistor 0.9+0.2 MARKING ZFN 0.70+0.10 0.70+0.10 2.30+0.1 2.0+0.3 0.70+0.10 4.60+0.1 0.27+0.05 0.01~0.10 1 1 Base 3 2 CIRCUIT 1 3 2 Emitter 3 Collector ( Heat Sink ) 2 Dimensions in millimeters SC-73/SOT-223 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-7 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector − − − − Tamb ≤ 25 °C; note 1 − MIN. MAX. 180 160 6.0 600 2.0 +150 150 +150 UNIT V V V mA W °C °C °C −65 − −65 RATING CHARACTERISTIC CURVES ( CHT5551ZPT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL ICBO ICBO IEBO hFE PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain CONDITIONS VCB = 120 V VCB = 120 V,TA=100OC VEB=4.0V IC = 1.0 mA; V CE = 5V IC = 10mA; VCE = 5V IC = 50 mA; VCE =5V − − − 80 80 30 MIN. MAX. 50 50 50 − 250 − UNIT nA uA nA PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 357 UNIT K/W VCEsat collector-emitter saturation voltage base-emitter saturation voltage collector capacitance IC = 1 0 mA; IB = 1.0 m A -5 IC = 0 mA; IB = 5.0 m A IC =10 mA; IB =1.0mA -5 IC = 0 mA; IB = 5.0 m A IE = ie = 0; VCB = 1 0 V; f = 1 MHz VCE=10V,IC=1.0mA,f=1.0KHz − − − − − 50 100 0.15 0.2 1.0 1.0 6.0 200 300 8.0 V V V V pF VBEsat Cob hfe fT F transition frequency noise Þgure IC = 10 mA; VCE = 1 0 V; f = 1.0 MHz MHz dB IC = 200 mA; VCE = 5 V; RS = 1 0 Ω; − f =10Hz to 15.7KHz