MMBT5551

MMBT5551 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT5401) Ideal for Medium Power Amplification and Switching B E A C B TOP VIEW E SOT-23 Dim A C Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0° Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8° B C D E G H J K L M a Mechanical Data · · · · · · · · Case: SOT-23, Molded Plastic Case material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking (See Page 2): K4N Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approx.) D G H K J L M C B E All Dimensions in mm @ TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG MMBT5551 180 160 6.0 200 300 417 -55 to +150 Unit V V V mA mW °C/W °C Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Characteristic Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Small Signal Current Gain Current Gain-Bandwidth Product Noise Figure Notes: @ TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min 180 160 6.0 ¾ ¾ 80 80 30 ¾ ¾ ¾ 50 100 ¾ Max ¾ ¾ ¾ 50 50 ¾ 250 ¾ 0.15 0.20 1.0 Unit V V V nA mA nA Test Condition IC = 100mA, IE = 0 IC = 1.0mA, IB = 0 IE = 10mA, IC = 0 VCB = 120V, IE = 0 VCB = 120V, IE = 0, TA = 100°C VEB = 4.0V, IC = 0 IC = 1.0mA, VCE = 5.0V IC = 10mA, VCE = 5.0V IC = 50mA, VCE = 5.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 10V, f = 1.0MHz, IE = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 10mA, f = 100MHz VCE = 5.0V, IC = 200mA, RS = 1.0kW, f = 1.0kHz hFE VCE(SAT) VBE(SAT) ¾ V V Cobo hfe fT NF 6.0 250 300 8.0 pF ¾ MHz dB 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration test pulse used to minimize self-heating effect. DS30061 Rev. 4 - 2 1 of 2 www.diodes.com MMBT5551 Ordering Information Device MMBT5551-7 Notes: (Note 3) Packaging SOT-23 Shipping 3000/Tape & Reel 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K4N K4N = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L March 3 2001 M Apr 4 2002 N May 5 2003 P Jun 6 2004 R Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D DS30061 Rev. 4 - 2 2 of 2 www.diodes.com YM MMBT5551