FP100R12N2T7
EconoPIM™2 module
Preliminary datasheet
EconoPIM™2 module with TRENCHSTOP™IGBT7 and Emitter Controlled 7 diode and NTC
Features
• Electrical features
- VCES = 1200 V
- IC nom = 100 A / ICRM = 200 A
- Low VCEsat
- Overload operation up to 175°C
- TRENCHSTOPTM IGBT7
• Mechanical features
- Al2O3 substrate with low thermal resistance
- Copper base plate
- Integrated NTC temperature sensor
- Solder contact technology
Potential applications
• Servo drives
• Auxiliary inverters
• Motor drives
Product validation
• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068
Description
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
0.10
2021-03-26
FP100R12N2T7
EconoPIM™2 module
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
3
Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4
Diode, Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5
IGBT, Brake-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
6
Diode, Brake-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
7
NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
8
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
9
Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
10
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
11
Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Datasheet
2
0.10
2021-03-26
FP100R12N2T7
EconoPIM™2 module
1 Package
1
Package
Table 1
Insulation coordination
Parameter
Symbol Note or test condition
Isolation test voltage
VISOL
RMS, f = 50 Hz, t = 1 min
Material of module
baseplate
Values
Unit
2.5
kV
Cu
Internal Isolation
basic insulation (class 1, IEC 61140)
Al2O3
Creepage distance
dCreep
terminal to heatsink
10.0
mm
Clearance
dClear
terminal to heatsink
7.5
mm
Comparative tracking index
CTI
RTI Elec.
RTI
Table 2
> 200
housing
140
°C
Values
Unit
Characteristic values
Parameter
Symbol Note or test condition
Min.
Stray inductance module
LsCE
Typ.
Max.
35
nH
Module lead resistance,
terminals - chip
RAA'+CC'
TC=25°C, per switch
2.5
mΩ
Module lead resistance,
terminals - chip
RCC'+EE'
TC=25°C, per switch
4.3
mΩ
Storage temperature
Tstg
Mounting torque for modul
mounting
M
Weight
G
Note:
2
Table 3
- Mounting according to M5, Screw
valid application note
125
°C
3
6
Nm
180
g
The current under continuous operation is limited to 80A rms in the main AC and DC power terminals and
limited to 50A rms per connector pin.
IGBT, Inverter
Maximum rated values
Parameter
Symbol Note or test condition
Collector-emitter voltage
VCES
Continous DC collector
current
ICDC
Tvj max = 175 °C
Repetitive peak collector
current
ICRM
tP = 1 ms
Gate-emitter peak voltage
VGES
Datasheet
-40
3
Values
Unit
Tvj = 25 °C
1200
V
TC = 95 °C
100
A
200
A
±20
V
0.10
2021-03-26
FP100R12N2T7
EconoPIM™2 module
2 IGBT, Inverter
Table 4
Characteristic values
Parameter
Symbol Note or test condition
Values
Min.
Collector-emitter saturation
voltage
Gate threshold voltage
Gate charge
VCE sat
VGEth
QG
IC = 100 A, VGE = 15 V
Unit
Typ.
Max.
Tvj = 25 °C
1.50
TBD
V
Tvj = 125 °C
1.64
Tvj = 175 °C
1.72
6.45
V
IC = 2.5 mA, VCE = VGE, Tvj = 25 °C
5.15
5.80
VGE = ±15 V, VCE = 600 V
1.8
µC
Internal gate resistor
RGint
Tvj = 25 °C
1.5
Ω
Input capacitance
Cies
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
21.7
nF
Reverse transfer capacitance
Cres
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
0.076
nF
Collector-emitter cut-off
current
ICES
VCE = 1200 V, VGE = 0 V
Gate-emitter leakage current
IGES
VCE = 0 V, VGE = 20 V, Tvj = 25 °C
Turn-on delay time
(inductive load)
tdon
IC = 100 A, VCE = 600 V,
VGE = ±15 V, RGon = 4.3 Ω
Rise time (inductive load)
Turn-off delay time
(inductive load)
Fall time (inductive load)
Turn-on energy loss per
pulse
Turn-off energy loss per
pulse
SC data
Datasheet
tr
tdoff
tf
Eon
Eoff
ISC
Tvj = 25 °C
Tvj = 25 °C
0.171
Tvj = 125 °C
0.185
Tvj = 175 °C
0.190
Tvj = 25 °C
0.050
Tvj = 125 °C
0.055
Tvj = 175 °C
0.058
Tvj = 25 °C
0.324
Tvj = 125 °C
0.433
Tvj = 175 °C
0.494
Tvj = 25 °C
0.093
Tvj = 125 °C
0.183
Tvj = 175 °C
0.245
IC = 100 A, VCE = 600 V,
Lσ = 35 nH, VGE = ±15 V,
RGon = 4.3 Ω, di/dt =
1450 A/µs (Tvj = 175 °C)
Tvj = 25 °C
10.4
Tvj = 125 °C
15.3
Tvj = 175 °C
17.6
IC = 100 A, VCE = 600 V,
Lσ = 35 nH, VGE = ±15 V,
RGoff = 4.3 Ω, dv/dt =
2850 V/µs (Tvj = 175 °C)
Tvj = 25 °C
6.42
Tvj = 125 °C
9.95
Tvj = 175 °C
12.3
VGE ≤ 15 V, VCC = 800 V,
VCEmax=VCES-LsCE*di/dt
tP ≤ 8 µs,
Tvj = 150 °C
370
tP ≤ 7 µs,
Tvj = 175 °C
350
IC = 100 A, VCE = 600 V,
VGE = ±15 V, RGon = 4.3 Ω
IC = 100 A, VCE = 600 V,
VGE = ±15 V, RGoff = 4.3 Ω
IC = 100 A, VCE = 600 V,
VGE = ±15 V, RGoff = 4.3 Ω
4
0.01
mA
100
nA
µs
µs
µs
µs
mJ
mJ
A
0.10
2021-03-26
FP100R12N2T7
EconoPIM™2 module
3 Diode, Inverter
Table 4
Characteristic values (continued)
Parameter
Symbol Note or test condition
Values
Min.
Thermal resistance, junction
to case
RthJC
per IGBT
Thermal resistance, case to
heatsink
RthCH
per IGBT, λgrease= 1 W/(m*K)
Temperature under
switching conditions
Tvj op
Note:
3
Max.
0.371
0.135
-40
K/W
K/W
175
°C
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN
2018-14.
Diode, Inverter
Table 5
Maximum rated values
Parameter
Symbol Note or test condition
Repetitive peak reverse
voltage
VRRM
Continous DC forward
current
IF
Repetitive peak forward
current
I2t - value
Table 6
IFRM
I2t
Values
Unit
1200
V
100
A
200
A
Tvj = 125 °C
1000
A²s
Tvj = 175 °C
930
Tvj = 25 °C
tP = 1 ms
tP = 10 ms, VR = 0 V
Characteristic values
Parameter
Symbol Note or test condition
Values
Min.
Forward voltage
Peak reverse recovery
current
Recovered charge
Datasheet
Typ.
Unit
VF
IRM
Qr
Unit
Typ.
Max.
Tvj = 25 °C
1.72
TBD
Tvj = 125 °C
1.59
Tvj = 175 °C
1.52
VR = 600 V, IF = 100 A,
VGE = -15 V, -diF/dt =
1450 A/µs (Tvj = 175 °C)
Tvj = 25 °C
58.2
Tvj = 125 °C
74.3
Tvj = 175 °C
82.4
VR = 600 V, IF = 100 A,
VGE = -15 V, -diF/dt =
1450 A/µs (Tvj = 175 °C)
Tvj = 25 °C
9.83
Tvj = 125 °C
15.9
Tvj = 175 °C
20.1
IF = 100 A, VGE = 0 V
5
V
A
µC
0.10
2021-03-26
FP100R12N2T7
EconoPIM™2 module
4 Diode, Rectifier
Table 6
Characteristic values (continued)
Parameter
Symbol Note or test condition
Values
Min.
Reverse recovery energy
Erec
VR = 600 V, IF = 100 A,
VGE = -15 V, -diF/dt =
1450 A/µs (Tvj = 175 °C)
Tvj = 25 °C
3.31
Tvj = 125 °C
5.01
Tvj = 175 °C
6.45
Thermal resistance, junction
to case
RthJC
per diode
Thermal resistance, case to
heatsink
RthCH
per diode, λgrease= 1 W/(m*K)
Temperature under
switching conditions
Tvj op
Note:
4
Typ.
Unit
Max.
mJ
0.592
0.148
-40
K/W
K/W
175
°C
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN
2018-14.
Diode, Rectifier
Table 7
Maximum rated values
Parameter
Symbol Note or test condition
Values
Unit
Repetitive peak reverse
voltage
VRRM
Tvj = 25 °C
1600
V
Maximum RMS forward
current per chip
IFRMSM
TC = 110 °C
100
A
Maximum RMS current at
rectifier output
IRMSM
TC = 110 °C
100
A
IFSM
tP = 10 ms
Tvj = 25 °C
745
A
Tvj = 150 °C
515
Tvj = 25 °C
2780
Tvj = 150 °C
1330
Surge forward current
I2t - value
Table 8
I2t
tP = 10 ms
Characteristic values
Parameter
Symbol Note or test condition
Values
Min.
Forward voltage
VF
IF = 100 A
Reverse current
Ir
Tvj = 150 °C, VR = 1600 V
Tvj = 150 °C
Thermal resistance, junction
to case
RthJC
per diode
Thermal resistance, case to
heatsink
RthCH
per diode, λgrease= 1 W/(m*K)
Datasheet
A²s
Typ.
Unit
Max.
1.16
V
1
mA
0.697
6
0.153
K/W
K/W
0.10
2021-03-26
FP100R12N2T7
EconoPIM™2 module
5 IGBT, Brake-Chopper
Table 8
Characteristic values (continued)
Parameter
Symbol Note or test condition
Values
Min.
Temperature under
switching conditions
5
Tvj, op
Typ.
-40
Unit
Max.
150
°C
IGBT, Brake-Chopper
Table 9
Maximum rated values
Parameter
Symbol Note or test condition
Collector-emitter voltage
VCES
Continous DC collector
current
ICDC
Tvj max = 175 °C
Repetitive peak collector
current
ICRM
tP = 1 ms
Gate-emitter peak voltage
VGES
Table 10
Values
Unit
Tvj = 25 °C
1200
V
TC = 115 °C
50
A
100
A
±20
V
Values
Unit
Characteristic values
Parameter
Symbol Note or test condition
Min.
Collector-emitter saturation
voltage
Gate threshold voltage
Gate charge
VCE sat
VGEth
QG
IC = 50 A, VGE = 15 V
Typ.
Max.
Tvj = 25 °C
1.50
TBD
V
Tvj = 125 °C
1.64
Tvj = 175 °C
1.72
6.45
V
IC = 1.28 mA, VCE = VGE, Tvj = 25 °C
VGE = ±15 V, VCE = 600 V
5.15
5.80
0.92
µC
0
Ω
Internal gate resistor
RGint
Tvj = 25 °C
Input capacitance
Cies
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
11.1
nF
Reverse transfer capacitance
Cres
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
0.039
nF
Collector-emitter cut-off
current
ICES
VCE = 1200 V, VGE = 0 V
Gate-emitter leakage current
IGES
VCE = 0 V, VGE = 20 V, Tvj = 25 °C
Turn-on delay time
(inductive load)
tdon
IC = 50 A, VCE = 600 V,
VGE = ±15 V, RGon = 8.2 Ω
Rise time (inductive load)
Datasheet
tr
IC = 50 A, VCE = 600 V,
VGE = ±15 V, RGon = 8.2 Ω
7
Tvj = 25 °C
Tvj = 25 °C
0.060
Tvj = 125 °C
0.062
Tvj = 175 °C
0.063
Tvj = 25 °C
0.036
Tvj = 125 °C
0.040
Tvj = 175 °C
0.042
0.008
mA
100
nA
µs
µs
0.10
2021-03-26
FP100R12N2T7
EconoPIM™2 module
6 Diode, Brake-Chopper
Table 10
Characteristic values (continued)
Parameter
Symbol Note or test condition
Values
Min.
Turn-off delay time
(inductive load)
tdoff
Fall time (inductive load)
Turn-on energy loss per
pulse
Turn-off energy loss per
pulse
SC data
tf
Eon
Eoff
ISC
IC = 50 A, VCE = 600 V,
VGE = ±15 V, RGoff = 8.2 Ω
Tvj = 25 °C
0.290
Tvj = 125 °C
0.380
Tvj = 175 °C
0.420
Tvj = 25 °C
0.110
Tvj = 125 °C
0.200
Tvj = 175 °C
0.270
IC = 50 A, VCE = 600 V,
Lσ = 35 nH, VGE = ±15 V,
RGon = 8.2 Ω, di/dt = 800
A/µs (Tvj = 175 °C)
Tvj = 25 °C
5.35
Tvj = 125 °C
7.04
Tvj = 175 °C
8
IC = 50 A, VCE = 600 V,
Lσ = 35 nH, VGE = ±15 V,
RGoff = 8.2 Ω, dv/dt =
2900 V/µs (Tvj = 175 °C)
Tvj = 25 °C
3.33
Tvj = 125 °C
5.32
Tvj = 175 °C
6.58
VGE ≤ 15 V, VCC = 800 V,
VCEmax=VCES-LsCE*di/dt
tP ≤ 8 µs,
Tvj = 150 °C
190
tP ≤ 7 µs,
Tvj = 175 °C
180
IC = 50 A, VCE = 600 V,
VGE = ±15 V, RGoff = 8.2 Ω
Thermal resistance, junction
to case
RthJC
per IGBT
Thermal resistance, case to
heatsink
RthCH
per IGBT, λgrease= 1 W/(m*K)
Temperature under
switching conditions
Tvj op
Note:
6
Table 11
Max.
µs
µs
mJ
mJ
A
0.580
0.147
-40
K/W
K/W
175
°C
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN
2018-14.
Diode, Brake-Chopper
Maximum rated values
Parameter
Symbol Note or test condition
Repetitive peak reverse
voltage
VRRM
Continous DC forward
current
IF
Repetitive peak forward
current
Datasheet
Typ.
Unit
IFRM
Tvj = 25 °C
tP = 1 ms
8
Values
Unit
1200
V
35
A
70
A
0.10
2021-03-26
FP100R12N2T7
EconoPIM™2 module
7 NTC-Thermistor
Table 11
Maximum rated values (continued)
Parameter
Symbol Note or test condition
I2t - value
I2t
Table 12
tP = 10 ms, VR = 0 V
Values
Unit
Tvj = 150 °C
125
A²s
Tvj = 175 °C
95
Characteristic values
Parameter
Symbol Note or test condition
Values
Min.
Forward voltage
VF
Peak reverse recovery
current
Recovered charge
IRM
Qr
Reverse recovery energy
Erec
Typ.
Max.
Tvj = 25 °C
1.72
TBD
Tvj = 125 °C
1.59
Tvj = 175 °C
1.52
VR = 600 V, IF = 35 A,
VGE = -15 V, -diF/dt = 700
A/µs (Tvj = 175 °C)
Tvj = 25 °C
20.1
Tvj = 125 °C
25.9
Tvj = 175 °C
29.8
VR = 600 V, IF = 35 A,
VGE = -15 V, -diF/dt = 700
A/µs (Tvj = 175 °C)
Tvj = 25 °C
2.66
Tvj = 125 °C
4.73
Tvj = 175 °C
6.94
VR = 600 V, IF = 35 A,
VGE = -15 V, -diF/dt = 700
A/µs (Tvj = 175 °C)
Tvj = 25 °C
0.95
Tvj = 125 °C
1.72
Tvj = 175 °C
2.38
IF = 35 A, VGE = 0 V
Thermal resistance, junction
to case
RthJC
per diode
Thermal resistance, case to
heatsink
RthCH
per diode, λgrease= 1 W/(m*K)
Temperature under
switching conditions
Tvj op
Note:
7
A
µC
mJ
1.11
0.176
-40
V
K/W
K/W
175
°C
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN
2018-14.
NTC-Thermistor
Table 13
Parameter
Characteristic values
Symbol Note or test condition
Values
Min.
Rated resistance
R25
Deviation of R100
ΔR/R
Power dissipation
P25
Datasheet
Unit
TNTC = 25 °C
Typ.
Unit
Max.
5
TNTC = 100 °C, R100 = 493 Ω
TNTC = 25 °C
9
-5
kΩ
5
%
20
mW
0.10
2021-03-26
FP100R12N2T7
EconoPIM™2 module
7 NTC-Thermistor
Table 13
Parameter
Characteristic values (continued)
Symbol Note or test condition
Values
Min.
Typ.
Unit
Max.
B-value
B25/50
R2 = R25 exp[B25/50(1/T2-1/(298,15 K))]
3375
K
B-value
B25/80
R2 = R25 exp[B25/80(1/T2-1/(298,15 K))]
3411
K
B-value
B25/100
R2 = R25 exp[B25/100(1/T2-1/(298,15 K))]
3433
K
Note:
Datasheet
Specification according to the valid application note.
10
0.10
2021-03-26
FP100R12N2T7
EconoPIM™2 module
8 Characteristics diagrams
8
Characteristics diagrams
output characteristic (typical), IGBT, Inverter
IC = f(VCE)
VGE = 15 V
output characteristic (typical), IGBT, Inverter
IC = f(VCE)
Tvj = 175 °C
200
200
175
175
150
150
125
125
100
100
75
75
50
50
25
25
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
transfer characteristic (typical), IGBT, Inverter
IC = f(VGE)
VCE = 20 V
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
switching losses (typical), IGBT, Inverter
E = f(IC)
RGoff = 4.3 Ω, RGon = 4.3 Ω, VCE = 600 V, VGE = ± 15 V
200
60
55
175
50
150
45
40
125
35
100
30
25
75
20
50
15
10
25
5
0
0
5
Datasheet
0.5
6
7
8
9
10
11
12
13
0
11
25
50
75
100
125
150
175
200
0.10
2021-03-26
FP100R12N2T7
EconoPIM™2 module
8 Characteristics diagrams
switching losses (typical), IGBT, Inverter
E = f(RG)
IC = 100 A, VCE = 600 V, VGE = ± 15 V
transient thermal impedance , IGBT, Inverter
Zth = f(t)
80
1
70
60
50
40
0.1
30
20
10
0
0
5
10
15
20
25
30
35
40
0.01
0.001
45
Voltage slope (typical), IGBT, Inverter
dv/dt = f(RG)
IC = 100 A, VCE = 600 V, VGE = ±15 V, Tvj = 25 °C
0.01
0.1
1
10
reverse bias safe operating area (RBSOA), IGBT,
Inverter
IC = f(VCE)
RGoff = 4.3 Ω, VGE = ±15 V, Tvj = 175 °C
7
250
225
6
200
5
175
150
4
125
3
100
75
2
50
1
25
0
0
0
Datasheet
5
10
15
20
25
30
35
40
45
0
12
200
400
600
800
1000
1200
1400
0.10
2021-03-26
FP100R12N2T7
EconoPIM™2 module
8 Characteristics diagrams
capacity characteristic (typical), IGBT, Inverter
C = f(VCE)
f = 100 kHz, VGE = 0 V, Tvj = 25 °C
gate charge characteristic (typical), IGBT, Inverter
VGE = f(QG)
IC = 100 A, Tvj = 25 °C
1000
15
10
100
5
10
0
1
-5
0.1
-10
0.01
-15
0
10
20
30
40
50
60
70
80
90
100
0.0
forward characteristic of (typical), Diode, Inverter
IF = f(VF)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
switching losses (typical), Diode, Inverter
Erec = f(IF)
RGon = 4.3 Ω, VCE = 600 V
200
8
175
7
150
6
125
5
100
4
75
3
50
2
25
1
0
0
0.0
Datasheet
0.2
0.5
1.0
1.5
2.0
2.5
0
13
25
50
75
100
125
150
175
200
0.10
2021-03-26
FP100R12N2T7
EconoPIM™2 module
8 Characteristics diagrams
switching losses (typical), Diode, Inverter
Erec = f(RG)
VCE = 600 V, IF = 100 A
transient thermal impedance , Diode, Inverter
Zth = f(t)
8
1
7
6
5
4
0.1
3
2
1
0
0
5
10
15
20
25
30
35
40
0.01
0.001
45
forward characteristic of (typical), Diode, Rectifier
IF = f(VF)
0.01
0.1
1
10
transient thermal impedance , Diode, Rectifier
Zth = f(t)
200
1
175
150
125
100
0.1
75
50
25
0
0.0
Datasheet
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0.001
1.6
14
0.01
0.1
1
10
0.10
2021-03-26
FP100R12N2T7
EconoPIM™2 module
8 Characteristics diagrams
output characteristic (typical), IGBT, Brake-Chopper
IC = f(VCE)
VGE = 15 V
100
forward characteristic of (typical), Diode, BrakeChopper
IF = f(VF)
70
90
60
80
50
70
60
40
50
30
40
30
20
20
10
10
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
1.5
2.0
2.5
temperature characteristic (typical), NTC-Thermistor
R = f(TNTC)
100000
10000
1000
100
10
0
Datasheet
25
50
75
100
125
150
175
15
0.10
2021-03-26
FP100R12N2T7
EconoPIM™2 module
9 Circuit diagram
9
Circuit diagram
J
Figure 2
Datasheet
16
0.10
2021-03-26
FP100R12N2T7
EconoPIM™2 module
10 Package outlines
10
Package outlines
Infineon
Figure 3
Datasheet
17
0.10
2021-03-26
FP100R12N2T7
EconoPIM™2 module
11 Module label code
11
Module label code
Module label code
Code format
Data Matrix
Barcode Code128
Encoding
ASCII text
Code Set A
Symbol size
16x16
23 digits
Standard
IEC24720 and IEC16022
IEC8859-1
Code content
Content
Module serial number
Module material number
Production order number
Date code (production year)
Date code (production week)
Digit
1–5
6 - 11
12 - 19
20 – 21
22 – 23
Example
71549
142846
55054991
15
30
Example
71549142846550549911530
71549142846550549911530
Figure 4
2
Datasheet
18
0.10
2021-03-26
Trademarks
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Edition 2021-03-26
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2021 Infineon Technologies AG
All Rights Reserved.
Do you have a question about any
aspect of this document?
Email: erratum@infineon.com
Document reference
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