FP100R12W3T7B11BPSA1

FP100R12W3T7_B11 EasyPIM™ module Preliminary EasyPIM™ module with TRENCHSTOP™IGBT7 and Emitter Controlled 7 diode and PressFIT / NTC Features • Electrical features - VCES = 1200 V - IC nom = 100 A / ICRM = 200 A - TRENCHSTOPTM IGBT7 - Low VCEsat - Overload operation up to 175°C • Mechanical features - High power density - Compact design - Al2O3 substrate with low thermal resistance - 2.5 kV AC 1 min insulation - PressFIT contact technology Potential applications • • • • • Air conditioning Auxiliary inverters Motor drives Servo drives UPS systems Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description J Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document 0.20 2020-11-13 FP100R12W3T7_B11 EasyPIM™ module Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Diode, Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 IGBT, Brake-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 6 Diode, Brake-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 7 NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 8 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 9 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 10 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Datasheet 2 0.20 2020-11-13 FP100R12W3T7_B11 EasyPIM™ module 1 Package 1 Package Table 1 Insulation Coordination Parameter Symbol Note or test condition Isolation test voltage VISOL Internal Isolation RMS, f = 50 Hz, t = 1 min Values Unit 2.5 kV basic insulation (class 1, IEC 61140) Al2O3 Creepage distance dCreep terminal to heatsink 11.2 mm Creepage distance dCreep terminal to terminal 6.8 mm Clearance dClear terminal to heatsink 9.4 mm Clearance dClear terminal to terminal 5.5 mm Comperative tracking index CTI RTI Elec. RTI Table 2 > 400 housing 140 °C Values Unit Characteristic Values Parameter Symbol Note or test condition Min. Stray inductance module LsCE Typ. Max. 35 nH Module lead resistance, terminals - chip RAA'+CC' TH=25°C, per switch 2.8 mΩ Module lead resistance, terminals - chip RCC'+EE' TH=25°C, per switch 2.2 mΩ Storage temperature Tstg Mounting torque for modul mounting M Weight G Note: 2 Table 3 - Mounting according to M5, valid application note Screw 125 °C 1.3 1.5 Nm 78 g Values Unit Tvj = 25 °C 1200 V TH = 65 °C 100 A 200 A ±20 V The current under continuous operation is limited to 25 A rms per connector pin. IGBT, Inverter Maximum Rated Values Parameter Symbol Note or test condition Collector-emitter voltage VCES Continous DC collector current ICDC Tvj max = 175 °C Repetitive peak collector current ICRM tP = 1 ms Gate-emitter peak voltage VGES Datasheet -40 3 0.20 2020-11-13 FP100R12W3T7_B11 EasyPIM™ module 2 IGBT, Inverter Table 4 Characteristic Values Parameter Symbol Note or test condition Values Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat IC = 100 A, VGE = 15 V Unit Typ. Max. Tvj = 25 °C 1.50 TBD V Tvj = 125 °C 1.64 Tvj = 175 °C 1.72 6.45 V VGEth IC = 2.5 mA, VCE = VGE, Tvj = 25 °C 5.15 5.80 QG VGE = ±15 V, VCE = 600 V 1.8 µC Internal gate resistor RGint Tvj = 25 °C 1.5 Ω Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 21.7 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.076 nF Collector-emitter cut-off current ICES VCE = 1200 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Turn on delay time (inductive load) tdon IC = 100 A, VCE = 600 V, VGE = ±15 V, RGon = 3.3 Ω Rise time (inductive load) Turn off delay time (inductive load) Datasheet tr tdoff Tvj = 125 °C Tvj = 25 °C 0.163 Tvj = 125 °C 0.184 Tvj = 175 °C 0.193 IC = 100 A, VCE = 600 V, VGE = ±15 V, RGon = 3.3 Ω Tvj = 25 °C 0.054 Tvj = 125 °C 0.056 Tvj = 175 °C 0.057 IC = 100 A, VCE = 600 V, VGE = ±15 V, RGoff = 3.3 Ω Tvj = 25 °C 0.328 Tvj = 125 °C 0.410 Tvj = 175 °C 0.459 4 0.009 mA 100 nA µs µs µs 0.20 2020-11-13 FP100R12W3T7_B11 EasyPIM™ module 3 Diode, Inverter Table 4 Characteristic Values (continued) Parameter Symbol Note or test condition Values Min. Fall time (inductive load) Turn-on energy loss per pulse Turn-off energy loss per pulse SC data tf Eon Eoff ISC Thermal resistance, junction to heatsink RthJH Temperature under switching conditions Tvj op Note: 3 Table 5 IC = 100 A, VCE = 600 V, VGE = ±15 V, RGoff = 3.3 Ω Tvj = 25 °C 0.114 Tvj = 125 °C 0.197 Tvj = 175 °C 0.258 IC = 100 A, VCE = 600 V, Lσ = 35 nH, di/dt = 1900 A/µs (Tvj = 175 °C), VGE = ±15 V, RGon = 3.3 Ω Tvj = 25 °C 9.5 Tvj = 125 °C 12.6 Tvj = 175 °C 14.3 IC = 100 A, VCE = 600 V, Lσ = 35 nH, du/dt = 3000 V/µs (Tvj = 175 °C), VGE = ±15 V, RGoff = 3.3 Ω Tvj = 25 °C 6.85 Tvj = 125 °C 10.3 Tvj = 175 °C 12.6 VCC = 800 V, VCEmax=VCES-LsCE*di/dt tP ≤ 8 µs, Tvj = 150 °C 370 tP ≤ 7 µs, Tvj = 175 °C 350 per IGBT, λgrease= 3.3 W/(m*K) Max. µs mJ mJ A 0.510 -40 K/W 175 °C Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. Diode, Inverter Maximum Rated Values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continous DC forward current IF Repetitive peak forward current Datasheet Typ. Unit IFRM Tvj = 25 °C tP = 1 ms 5 Values Unit 1200 V 100 A 200 A 0.20 2020-11-13 FP100R12W3T7_B11 EasyPIM™ module 4 Diode, Rectifier Table 5 Maximum Rated Values (continued) Parameter Symbol Note or test condition I2t - value I2t Table 6 VR = 0 V, tP = 10 ms Values Unit Tvj = 125 °C 970 A²s Tvj = 175 °C 860 Characteristic Values Parameter Symbol Note or test condition Values Min. Forward voltage VF Peak reverse recovery current Recovered charge IRM Qr Reverse recovery energy Erec Thermal resistance, junction to heatsink RthJH Temperature under switching conditions Tvj op Note: 4 Table 7 Unit Typ. Max. Tvj = 25 °C 1.72 TBD Tvj = 125 °C 1.59 Tvj = 175 °C 1.52 VR = 600 V, Tvj = 25 °C VGE = -15 V, Tvj = 125 °C -diF/dt = 1900 A/µs (Tvj = T = 175 °C vj 175 °C) 68.3 VR = 600 V, Tvj = 25 °C VGE = -15 V, Tvj = 125 °C -diF/dt = 1900 A/µs (Tvj = T = 175 °C vj 175 °C) 9.38 VR = 600 V, Tvj = 25 °C VGE = -15 V, Tvj = 125 °C -diF/dt = 1900 A/µs (Tvj = T = 175 °C vj 175 °C) 3.02 per diode, λgrease= 3.3 W/(m*K) 0.870 IF = 100 A, VGE = 0 V V A 84.6 92.8 µC 14.9 19.1 mJ 5.18 6.5 -40 K/W 175 °C Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. Diode, Rectifier Maximum Rated Values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 1600 V Maximum RMS forward current per chip IFRMSM TH = 100 °C 100 A Maximum RMS current at rectifier output IRMSM TH = 100 °C 100 A Datasheet 6 0.20 2020-11-13 FP100R12W3T7_B11 EasyPIM™ module 5 IGBT, Brake-Chopper Table 7 Maximum Rated Values (continued) Parameter Symbol Note or test condition Surge forward current I2t - value IFSM I 2t Table 8 tP = 10 ms tP = 10 ms Values Unit Tvj = 25 °C 1150 A Tvj = 150 °C 880 Tvj = 25 °C 6610 Tvj = 150 °C 3870 A²s Characteristic Values Parameter Symbol Note or test condition Values Min. Typ. Unit Max. Forward voltage VF Tvj = 150 °C, IF = 100 A 1.02 V Reverse current Ir Tvj = 150 °C, VR = 1600 V 1 mA 0.700 K/W Thermal resistance, junction to heatsink RthJH Temperature under switching conditions Tvj, op 5 Table 9 per diode, λgrease = 3.3 W /(m*K) -40 Maximum Rated Values Symbol Note or test condition Collector-emitter voltage VCES Continous DC collector current ICDC Tvj max = 175 °C Repetitive peak collector current ICRM tP = 1 ms Gate-emitter peak voltage VGES Values Unit Tvj = 25 °C 1200 V TH = 80 °C 50 A 100 A ±20 V Values Unit Characteristic Values Parameter Symbol Note or test condition Min. Collector-emitter saturation voltage Gate threshold voltage Datasheet °C IGBT, Brake-Chopper Parameter Table 10 150 VCE sat VGEth IC = 50 A, VGE = 15 V IC = 1.28 mA, VCE = VGE, Tvj = 25 °C 7 Typ. Max. Tvj = 25 °C 1.50 TBD V Tvj = 125 °C 1.64 Tvj = 175 °C 1.72 6.45 V 5.15 5.80 0.20 2020-11-13 FP100R12W3T7_B11 EasyPIM™ module 5 IGBT, Brake-Chopper Table 10 Characteristic Values (continued) Parameter Symbol Note or test condition Values Min. Gate charge QG VGE = ±15 V, VCE = 600 V Typ. Unit Max. 0.92 µC 0 Ω Internal gate resistor RGint Tvj = 25 °C Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 11.1 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.039 nF Collector-emitter cut-off current ICES VCE = 1200 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Turn on delay time (inductive load) tdon IC = 50 A, VCE = 600 V, VGE = ±15 V, RGon = 5.1 Ω Tvj = 25 °C 0.045 Tvj = 125 °C 0.047 Tvj = 175 °C 0.048 IC = 50 A, VCE = 600 V, VGE = ±15 V, RGon = 5.1 Ω Tvj = 25 °C 0.031 Tvj = 125 °C 0.034 Tvj = 175 °C 0.035 IC = 50 A, VCE = 600 V, VGE = ±15 V, RGoff = 5.1 Ω Tvj = 25 °C 0.255 Tvj = 125 °C 0.340 Tvj = 175 °C 0.382 IC = 50 A, VCE = 600 V, VGE = ±15 V, RGoff = 5.1 Ω Tvj = 25 °C 0.107 Tvj = 125 °C 0.195 Tvj = 175 °C 0.255 Rise time (inductive load) Turn off delay time (inductive load) Fall time (inductive load) Datasheet tr tdoff tf 8 Tvj = 25 °C 1 mA 100 nA µs µs µs µs 0.20 2020-11-13 FP100R12W3T7_B11 EasyPIM™ module 6 Diode, Brake-Chopper Table 10 Characteristic Values (continued) Parameter Symbol Note or test condition Values Min. Turn-on energy loss per pulse Turn-off energy loss per pulse SC data Eon Eoff ISC Thermal resistance, junction to heatsink RthJH Temperature under switching conditions Tvj op Note: 6 Table 11 Tvj = 25 °C 3.21 Tvj = 125 °C 4.03 Tvj = 175 °C 4.46 IC = 50 A, VCE = 600 V, Lσ = 35 nH, du/dt = 2900 V/µs (Tvj = 175 °C), VGE = ±15 V, RGoff = 5.1 Ω Tvj = 25 °C 3.23 Tvj = 125 °C 5.22 Tvj = 175 °C 6.45 tP ≤ 8 µs, Tvj = 150 °C 190 tP ≤ 7 µs, Tvj = 175 °C 180 VCC = 800 V, VCEmax=VCES-LsCE*di/dt per IGBT, λgrease= 3.3 W /(m*K) mJ mJ A 0.850 -40 K/W 175 °C Diode, Brake-Chopper Maximum Rated Values Symbol Note or test condition Repetitive peak reverse voltage VRRM Continous DC forward current IF Repetitive peak forward current Datasheet IC = 50 A, VCE = 600 V, Lσ = 35 nH, di/dt = 1200 A/µs (Tvj = 175 °C), VGE = ±15 V, RGon = 5.1 Ω Max. Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. Parameter I2t - value Typ. Unit Values Unit 1200 V 25 A 50 A Tvj = 125 °C 72.5 A²s Tvj = 175 °C 63 Tvj = 25 °C IFRM tP = 1 ms I2t VR = 0 V, tP = 10 ms 9 0.20 2020-11-13 FP100R12W3T7_B11 EasyPIM™ module 7 NTC-Thermistor Table 12 Characteristic Values Parameter Symbol Note or test condition Values Min. Forward voltage VF Peak reverse recovery current IRM Recovered charge Qr Reverse recovery energy Erec Thermal resistance, junction to heatsink RthJH Temperature under switching conditions Tvj op Note: 7 IF = 25 A, VGE = 0 V Typ. Tvj = 25 °C 1.83 Tvj = 125 °C 1.70 Tvj = 175 °C 1.63 VR = 600 V, Tvj = 25 °C VGE = -15 V, Tvj = 125 °C -diF/dt = 1100 A/µs (Tvj = T = 175 °C vj 175 °C) 27.4 VR = 600 V, Tvj = 25 °C VGE = -15 V, Tvj = 125 °C -diF/dt = 1100 A/µs (Tvj = T = 175 °C vj 175 °C) 1.93 VR = 600 V, Tvj = 25 °C VGE = -15 V, Tvj = 125 °C -diF/dt = 1100 A/µs (Tvj = T = 175 °C vj 175 °C) 0.74 per diode, λgrease= 3.3 W /(m*K) 1.86 Unit Max. V A 31.2 34.1 µC 3.51 4.51 mJ 1.42 1.85 -40 K/W 175 °C Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. NTC-Thermistor Table 13 Characteristic Values Parameter Symbol Note or test condition Values Min. Rated resistance R25 Deviation of R100 ΔR/R Power dissipation P25 TNTC = 25 °C TNTC = 100 °C, R100 = 493 Ω Typ. Unit Max. 5 -5 TNTC = 25 °C kΩ 5 % 20 mW B-value B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))] 3375 K B-value B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))] 3411 K B-value B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))] 3433 K Note: Datasheet Specification according to the valid application note. 10 0.20 2020-11-13 FP100R12W3T7_B11 EasyPIM™ module 8 Characteristics diagrams 8 Characteristics diagrams output characteristic (typical), IGBT, Inverter IC = f(VCE) VGE = 15 V output characteristic (typical), IGBT, Inverter IC = f(VCE) Tvj = 175 °C 200 200 175 175 150 150 125 125 100 100 75 75 50 50 25 25 0 0 0 0.5 1 1.5 2 2.5 3 0 transfer characteristic (typical), IGBT, Inverter IC = f(VGE) VCE = 20 V 1 1.5 2 2.5 3 3.5 4 4.5 5 switching losses (typical), IGBT, Inverter E = f(IC) RGoff = 3.3 Ω, RGon = 3.3 Ω, VCE = 600 V, VGE = ± 15 V 200 40 175 35 150 30 125 25 100 20 75 15 50 10 25 5 0 0 5 Datasheet 0.5 6 7 8 9 10 11 12 13 0 11 25 50 75 100 125 150 175 200 0.20 2020-11-13 FP100R12W3T7_B11 EasyPIM™ module 8 Characteristics diagrams switching losses (typical), IGBT, Inverter E = f(RG) IC = 100 A, VCE = 600 V, VGE = ± 15 V switching times (typical), IGBT, Inverter t = f(IC) RGoff = 3.3 Ω, RGon = 3.3 Ω, VCE = 600 V, VGE = ± 15 V, Tvj = 175 °C 65 10 60 55 50 45 1 40 35 30 25 0.1 20 15 10 5 0 0.01 0 5 10 15 20 25 30 35 0 switching times (typical), IGBT, Inverter t = f(RG) IC = 100 A, VCE = 600 V, VGE = ± 15 V, Tvj = 175 °C 25 50 75 100 125 150 175 200 dv/dt (typical), IGBT, Inverter dV/dt = f(RGon) IC = 100 A, VCE = 600 V, VGE = ±15 V, Tvj = 25 °C 10 7 6 5 1 4 3 0.1 2 1 0.01 0 0 Datasheet 5 10 15 20 25 30 35 0 12 5 10 15 20 25 30 35 0.20 2020-11-13 FP100R12W3T7_B11 EasyPIM™ module 8 Characteristics diagrams transient thermal impedance , IGBT, Inverter Zth = f(t) reverse bias safe operating area (RBSOA), IGBT, Inverter IC = f(VCE) RGoff = 3.3 Ω, VGE = ±15.0 V, Tvj = 175 °C 1 250 200 150 0.1 100 50 0 0.01 0.001 0.01 0.1 1 0 10 capacity characteristic (typical), IGBT, Inverter C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C 200 400 600 800 1000 1200 1400 gate charge characteristic (typical), IGBT, Inverter VGE = f(QG) IC = 100 A, Tvj = 25 °C 1000 15 10 100 5 10 0 1 -5 0.1 -10 0.01 -15 0 Datasheet 10 20 30 40 50 60 70 80 90 100 0 13 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0.20 2020-11-13 FP100R12W3T7_B11 EasyPIM™ module 8 Characteristics diagrams forward characteristic (typical), Diode, Inverter IF = f(VF) switching losses (typical), Diode, Inverter Erec = f(IF) VCE = 600 V, RGon = RGon(IGBT) 200 9 8 175 7 150 6 125 5 100 4 75 3 50 2 25 1 0 0 0 0.5 1 1.5 2 2.5 0 switching losses (typical), Diode, Inverter Erec = f(RG) VCE = 600 V, IF = 100 A 25 50 75 100 125 150 175 200 transient thermal impedance , Diode, Inverter Zth = f(t) 8 10 7 6 1 5 4 3 0.1 2 1 0 0.01 0 Datasheet 5 10 15 20 25 30 35 0.001 14 0.01 0.1 1 10 0.20 2020-11-13 FP100R12W3T7_B11 EasyPIM™ module 8 Characteristics diagrams forward characteristic (typical), Diode, Rectifier IF = f(VF) transient thermal impedance , Diode, Rectifier Zth = f(t) 200 1 175 150 125 100 0.1 75 50 25 0 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.001 output characteristic (typical), IGBT, Brake-Chopper IC = f(VCE) VGE = 15 V 50 90 45 80 40 70 35 60 30 50 25 40 20 30 15 20 10 10 5 1 10 0 0 Datasheet 0.1 forward characteristic (typical), Diode, BrakeChopper IF = f(VF) 100 0 0.01 0.5 1 1.5 2 2.5 3 0 15 0.5 1 1.5 2 2.5 0.20 2020-11-13 FP100R12W3T7_B11 EasyPIM™ module 8 Characteristics diagrams temperature characteristic (typical), NTC-Thermistor R = f(TNTC) 100000 10000 1000 100 10 0 Datasheet 25 50 75 100 125 150 175 16 0.20 2020-11-13 FP100R12W3T7_B11 EasyPIM™ module 9 Circuit diagram 9 Circuit diagram J Figure 2 Package outlines pcb hole pattern ( 2,3) Dome 4x 26 5,4 0,1 24 20,8 17,6 14,4 2x 8 4,8 1,6 0 1,6 4,8 8 11,2 0,25 A B C 0 2x 14 NB EB GB L1 NTC G3 E3 G1 E1 L3 U V G5 E5 B W ) 3,4 C 36,08 32,88 109,9 0,45 16,88 20,08 23,28 26,48 29,68 32,88 36,08 44,43 47,43 49,68 0 N3 E6 G6 E4 G4 L2 ( N2 P2 E2 G2 17,6 20,8 24 26 49,68 47,43 44,43 P1 N1 N P 14 62 0,45 3,5 2x 12 according to screw head washer 0,25 A B C 4x 0 4,08 7,28 dimensioned for EJOT Delta PT WN5451 25 choose length according to pcb thickness 4x B 4,2 26,48 23,28 20,08 16,88 13,68 10,48 7,28 4,08 10 (12) (16,4) 12,2 0,1 A recommended design hight Figure 3 Datasheet 17 0.20 2020-11-13 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2020-11-13 Published by Infineon Technologies AG 81726 Munich, Germany © 2020 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX- IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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