FP150R12N3T7B11BPSA1

FP150R12N3T7_B11 EconoPIM™3 module EconoPIM™3 module with TRENCHSTOP™IGBT7 and emitter controlled 7 diode and NTC Features • Electrical features - VCES = 1200 V - IC nom = 150 A / ICRM = 300 A - TRENCHSTOPTM IGBT7 - Overload operation up to 175°C - Low VCE,sat • Mechanical features - Integrated NTC temperature sensor - PressFIT contact technology - Copper base plate - Al2O3 substrate with low thermal resistance Potential applications • Auxiliary inverters • Motor drives • Servo drives Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2022-03-28 FP150R12N3T7_B11 EconoPIM™3 module Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Diode, Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 IGBT, Brake-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 6 Diode, Brake-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 7 NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 8 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 9 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 10 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 11 Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Datasheet 2 Revision 1.00 2022-03-28 FP150R12N3T7_B11 EconoPIM™3 module 1 Package 1 Package Table 1 Insulation coordination Parameter Symbol Note or test condition Isolation test voltage VISOL RMS, f = 50 Hz, t = 1 min Material of module baseplate Values Unit 2.5 kV Cu Internal isolation basic insulation (class 1, IEC 61140) Al2O3 Creepage distance dCreep terminal to heatsink 10.0 mm Clearance dClear terminal to heatsink 7.5 mm Comparative tracking index CTI Relative thermal index (electrical) RTI Table 2 > 200 housing 140 °C Values Unit Characteristic values Parameter Symbol Note or test condition Min. Stray inductance module LsCE Typ. Max. 25 nH Module lead resistance, terminals - chip RAA'+CC' TC=25°C, per switch 1.1 mΩ Module lead resistance, terminals - chip RCC'+EE' TC=25°C, per switch 1.6 mΩ Storage temperature Tstg Mounting torque for module mounting M Weight G Note: 2 Table 3 - Mounting according to M5, Screw valid application note 125 °C 3 6 Nm 300 g Values Unit Tvj = 25 °C 1200 V TC = 80 °C 150 A 300 A ±20 V The current under continuous operation is limited to 50 A rms per connector pin IGBT, Inverter Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage VCES Continuous DC collector current ICDC Tvj max = 175 °C Repetitive peak collector current ICRM tp limited by Tvj op Gate-emitter peak voltage VGES Datasheet -40 3 Revision 1.00 2022-03-28 FP150R12N3T7_B11 EconoPIM™3 module 2 IGBT, Inverter Table 4 Characteristic values Parameter Symbol Note or test condition Values Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth QG IC = 150 A, VGE = 15 V Unit Typ. Max. Tvj = 25 °C 1.55 1.80 V Tvj = 125 °C 1.69 Tvj = 175 °C 1.77 6.45 V IC = 3.5 mA, VCE = VGE, Tvj = 25 °C VGE = ±15 V, VCE = 600 V 5.15 5.80 2.5 µC 1 Ω Internal gate resistor RGint Tvj = 25 °C Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 30.1 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.105 nF Collector-emitter cut-off current ICES VCE = 1200 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 150 A, VCE = 600 V, VGE = ±15 V, RGon = 3.3 Ω Rise time (inductive load) Turn-off delay time (inductive load) Fall time (inductive load) Turn-on energy loss per pulse Turn-off energy loss per pulse tr tdoff tf Eon Eoff IC = 150 A, VCE = 600 V, VGE = ±15 V, RGon = 3.3 Ω IC = 150 A, VCE = 600 V, VGE = ±15 V, RGoff = 3.3 Ω IC = 150 A, VCE = 600 V, VGE = ±15 V, RGoff = 3.3 Ω IC = 150 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGon = 3.3 Ω, di/dt = 1700 A/µs (Tvj = 175 °C) IC = 150 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 3.3 Ω, dv/dt = 3200 V/µs (Tvj = 175 °C) Tvj = 25 °C Tvj = 25 °C 0.172 Tvj = 125 °C 0.183 Tvj = 175 °C 0.189 Tvj = 25 °C 0.072 Tvj = 125 °C 0.077 Tvj = 175 °C 0.080 Tvj = 25 °C 0.331 Tvj = 125 °C 0.414 Tvj = 175 °C 0.433 Tvj = 25 °C 0.103 Tvj = 125 °C 0.198 Tvj = 175 °C 0.262 Tvj = 25 °C 16.6 Tvj = 125 °C 24.9 Tvj = 175 °C 29.6 Tvj = 25 °C 10.4 Tvj = 125 °C 15.9 Tvj = 175 °C 19.9 0.012 mA 100 nA µs µs µs µs mJ mJ (table continues...) Datasheet 4 Revision 1.00 2022-03-28 FP150R12N3T7_B11 EconoPIM™3 module 3 Diode, Inverter Table 4 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. SC data ISC VGE ≤ 15 V, VCC = 800 V, VCEmax=VCES-LsCE*di/dt tP ≤ 8 µs, Tvj=150 °C 520 tP ≤ 7 µs, Tvj=175 °C 490 Thermal resistance, junction to case RthJC per IGBT Thermal resistance, case to heat sink RthCH per IGBT, λgrease= 1 W/(m*K) Temperature under switching conditions Tvj op Note: 3 Typ. Unit Max. A 0.290 0.0680 -40 K/W K/W 175 °C Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. Diode, Inverter Table 5 Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continuous DC forward current IF Repetitive peak forward current IFRM I2t - value Table 6 I2t Values Unit 1200 V 150 A 300 A Tvj = 125 °C 2700 A²s Tvj = 175 °C 2250 Tvj = 25 °C tP = 1 ms tP = 10 ms, VR = 0 V Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage Peak reverse recovery current VF IRM IF = 150 A, VGE = 0 V VR = 600 V, IF = 150 A, VGE = -15 V, -diF/dt = 1700 A/µs (Tvj = 175 °C) Unit Typ. Max. Tvj = 25 °C 1.72 2.10 Tvj = 125 °C 1.59 Tvj = 175 °C 1.52 Tvj = 25 °C 65.3 Tvj = 125 °C 91.8 Tvj = 175 °C 107 V A (table continues...) Datasheet 5 Revision 1.00 2022-03-28 FP150R12N3T7_B11 EconoPIM™3 module 4 Diode, Rectifier Table 6 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Recovered charge Qr Reverse recovery energy Erec VR = 600 V, IF = 150 A, VGE = -15 V, -diF/dt = 1700 A/µs (Tvj = 175 °C) Tvj = 25 °C 10.3 Tvj = 125 °C 21.7 Tvj = 175 °C 28.6 VR = 600 V, IF = 150 A, VGE = -15 V, -diF/dt = 1700 A/µs (Tvj = 175 °C) Tvj = 25 °C 3.27 Tvj = 125 °C 7.32 Tvj = 175 °C 9.88 Thermal resistance, junction to case RthJC per diode Thermal resistance, case to heat sink RthCH per diode, λgrease= 1 W/(m*K) Temperature under switching conditions Tvj op Note: 4 Typ. Unit Max. µC mJ 0.463 0.0698 -40 K/W K/W 175 °C Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. Diode, Rectifier Table 7 Maximum rated values Parameter Symbol Note or test condition Unit 1600 V Repetitive peak reverse voltage VRRM Maximum RMS forward current per chip IFRMSM TC = 100 °C 150 A Maximum RMS current at rectifier output IRMSM TC = 100 °C 150 A IFSM tP = 10 ms Tvj = 25 °C 1600 A Tvj = 150 °C 1400 Tvj = 25 °C 12800 Tvj = 150 °C 9800 Surge forward current I2t - value Table 8 I2t Tvj = 25 °C Values tP = 10 ms A²s Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage VF IF = 150 A Tvj = 150 °C Reverse current Ir Tvj = 150 °C, VR = 1600 V Typ. Unit Max. 0.97 V 1 mA (table continues...) Datasheet 6 Revision 1.00 2022-03-28 FP150R12N3T7_B11 EconoPIM™3 module 5 IGBT, Brake-Chopper Table 8 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Thermal resistance, junction to case RthJC per diode Thermal resistance, case to heat sink RthCH per diode, λgrease= 1 W/(m*K) Temperature under switching conditions Tvj, op 5 Typ. Unit Max. 0.333 0.0670 -40 K/W K/W 150 °C IGBT, Brake-Chopper Table 9 Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage VCES Continuous DC collector current ICDC Tvj max = 175 °C Repetitive peak collector current ICRM tp limited by Tvj op Gate-emitter peak voltage VGES Table 10 Values Unit Tvj = 25 °C 1200 V TC = 90 °C 100 A 200 A ±20 V Values Unit Characteristic values Parameter Symbol Note or test condition Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth QG IC = 100 A, VGE = 15 V Typ. Max. Tvj = 25 °C 1.50 1.80 V Tvj = 125 °C 1.64 Tvj = 175 °C 1.72 6.45 V IC = 2.5 mA, VCE = VGE, Tvj = 25 °C 5.15 5.80 VGE = ±15 V, VCE = 600 V 1.8 µC Internal gate resistor RGint Tvj = 25 °C 1.5 Ω Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 21.7 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.076 nF Collector-emitter cut-off current ICES VCE = 1200 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Tvj = 25 °C 0.01 mA 100 nA (table continues...) Datasheet 7 Revision 1.00 2022-03-28 FP150R12N3T7_B11 EconoPIM™3 module 5 IGBT, Brake-Chopper Table 10 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Turn-on delay time (inductive load) Rise time (inductive load) Turn-off delay time (inductive load) Fall time (inductive load) Turn-on energy loss per pulse Turn-off energy loss per pulse SC data tdon tr tdoff tf Eon Eoff ISC IC = 100 A, VCE = 600 V, VGE = ±15 V, RGon = 4.3 Ω Tvj = 25 °C 0.169 Tvj = 125 °C 0.180 Tvj = 175 °C 0.187 Tvj = 25 °C 0.063 Tvj = 125 °C 0.067 Tvj = 175 °C 0.070 Tvj = 25 °C 0.310 Tvj = 125 °C 0.390 Tvj = 175 °C 0.410 Tvj = 25 °C 0.110 Tvj = 125 °C 0.190 Tvj = 175 °C 0.250 IC = 100 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGon = 4.3 Ω, di/dt = 1100 A/µs (Tvj = 175 °C) Tvj = 25 °C 7.12 Tvj = 125 °C 11.7 Tvj = 175 °C 14.5 IC = 100 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 4.3 Ω, dv/dt = 2800 V/µs (Tvj = 175 °C) Tvj = 25 °C 6.93 Tvj = 125 °C 10.6 Tvj = 175 °C 13.3 VGE ≤ 15 V, VCC = 800 V, VCEmax=VCES-LsCE*di/dt tP ≤ 8 µs, Tvj=150 °C 370 tP ≤ 7 µs, Tvj=175 °C 350 IC = 100 A, VCE = 600 V, VGE = ±15 V, RGon = 4.3 Ω IC = 100 A, VCE = 600 V, VGE = ±15 V, RGoff = 4.3 Ω IC = 100 A, VCE = 600 V, VGE = ±15 V, RGoff = 4.3 Ω Thermal resistance, junction to case RthJC per IGBT Thermal resistance, case to heat sink RthCH per IGBT, λgrease= 1 W/(m*K) Temperature under switching conditions Tvj op Note: Datasheet Typ. Unit Max. µs µs µs µs mJ mJ A 0.373 0.0680 -40 K/W K/W 175 °C Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. 8 Revision 1.00 2022-03-28 FP150R12N3T7_B11 EconoPIM™3 module 6 Diode, Brake-Chopper 6 Diode, Brake-Chopper Table 11 Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continuous DC forward current IF Repetitive peak forward current IFRM I2t - value I2t Table 12 Values Unit 1200 V 50 A 100 A Tvj = 125 °C 220 A²s Tvj = 175 °C 200 Tvj = 25 °C tP = 1 ms tP = 10 ms, VR = 0 V Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage Peak reverse recovery current Recovered charge Reverse recovery energy VF IRM Qr Erec Typ. Max. Tvj = 25 °C 1.72 2.10 Tvj = 125 °C 1.59 Tvj = 175 °C 1.52 VR = 600 V, IF = 50 A, VGE = -15 V, -diF/dt = 550 A/µs (Tvj = 175 °C) Tvj = 25 °C 37.3 Tvj = 125 °C 44.3 Tvj = 175 °C 49.6 VR = 600 V, IF = 50 A, VGE = -15 V, -diF/dt = 550 A/µs (Tvj = 175 °C) Tvj = 25 °C 3.86 Tvj = 125 °C 7.05 Tvj = 175 °C 10.1 VR = 600 V, IF = 50 A, VGE = -15 V, -diF/dt = 550 A/µs (Tvj = 175 °C) Tvj = 25 °C 1.13 Tvj = 125 °C 2.34 Tvj = 175 °C 3.23 IF = 50 A, VGE = 0 V Thermal resistance, junction to case RthJC per diode Thermal resistance, case to heat sink RthCH per diode, λgrease= 1 W/(m*K) Temperature under switching conditions Tvj op Note: Datasheet Unit A µC mJ 0.909 0.109 -40 V K/W K/W 175 °C Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. 9 Revision 1.00 2022-03-28 FP150R12N3T7_B11 EconoPIM™3 module 7 NTC-Thermistor 7 NTC-Thermistor Table 13 Characteristic values Parameter Symbol Note or test condition Values Min. Rated resistance R25 Deviation of R100 ΔR/R Power dissipation P25 TNTC = 25 °C Typ. Unit Max. 5 TNTC = 100 °C, R100 = 493 Ω -5 TNTC = 25 °C kΩ 5 % 20 mW B-value B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))] 3375 K B-value B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))] 3411 K B-value B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))] 3433 K Note: Datasheet Specification according to the valid application note. 10 Revision 1.00 2022-03-28 FP150R12N3T7_B11 EconoPIM™3 module 8 Characteristics diagrams 8 Characteristics diagrams Output characteristic (typical), IGBT, Inverter IC = f(VCE) VGE = 15 V Output characteristic field (typical), IGBT, Inverter IC = f(VCE) Tvj = 175 °C 300 300 250 250 200 200 150 150 100 100 50 50 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 Transfer characteristic (typical), IGBT, Inverter IC = f(VGE) VCE = 20 V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Switching losses (typical), IGBT, Inverter E = f(IC) RGoff = 3.3 Ω, RGon = 3.3 Ω, VGE = ±15 V, VCE = 600 V 300 120 110 250 100 90 200 80 70 150 60 50 100 40 30 50 20 10 0 0 5 Datasheet 6 7 8 9 10 11 12 13 0 11 50 100 150 200 250 300 Revision 1.00 2022-03-28 FP150R12N3T7_B11 EconoPIM™3 module 8 Characteristics diagrams Switching losses (typical), IGBT, Inverter E = f(RG) VGE = ±15 V, IC = 150 A, VCE = 600 V Switching times (typical), IGBT, Inverter t = f(IC) RGoff = 3.3 Ω, RGon = 3.3 Ω, VGE = ±15 V, VCE = 600 V, Tvj = 175 °C 10 160 150 140 130 120 110 1 100 90 80 70 60 0.1 50 40 30 20 10 0 0.01 0 5 10 15 20 25 30 35 0 Switching times (typical), IGBT, Inverter t = f(RG) VGE = ±15 V, IC = 150 A, VCE = 600 V, Tvj = 175 °C 50 100 150 200 250 300 Transient thermal impedance , IGBT, Inverter Zth = f(t) 10 1 1 0.1 0.1 0.01 0 Datasheet 5 10 15 20 25 30 0.01 0.001 35 12 0.01 0.1 1 10 Revision 1.00 2022-03-28 FP150R12N3T7_B11 EconoPIM™3 module 8 Characteristics diagrams Reverse bias safe operating area (RBSOA), IGBT, Inverter IC = f(VCE) RGoff = 3.3 Ω, VGE = 15 V, Tvj = 175 °C Capacity characteristic (typical), IGBT, Inverter C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C 1000 350 300 100 250 10 200 150 1 100 0.1 50 0 0.01 0 200 400 600 800 1000 1200 1400 0 Voltage slope (typical), IGBT, Inverter dv/dt = f(RG) IC = 150 A, VCE = 600 V, VGE = ±15 V, Tvj = 25 °C 10 20 30 40 50 60 70 80 90 100 Gate charge characteristic (typical), IGBT, Inverter VGE = f(QG) IC = 150 A, Tvj = 25 °C 7 15 6 10 5 5 4 0 3 -5 2 -10 1 0 -15 0 Datasheet 5 10 15 20 25 30 35 0.0 13 0.5 1.0 1.5 2.0 2.5 Revision 1.00 2022-03-28 FP150R12N3T7_B11 EconoPIM™3 module 8 Characteristics diagrams Forward characteristic (typical), Diode, Inverter IF = f(VF) Switching losses (typical), Diode, Inverter Erec = f(IF) RGon = 3.3 Ω, VCE = 600 V 300 14 12 250 10 200 8 150 6 100 4 50 2 0 0 0.0 0.5 1.0 1.5 2.0 2.5 0 Switching losses (typical), Diode, Inverter Erec = f(RG) VCE = 600 V, IF = 150 A 50 100 150 200 250 300 Transient thermal impedance, Diode, Inverter Zth = f(t) 1 14 12 10 8 0.1 6 4 2 0 0 Datasheet 5 10 15 20 25 30 0.01 0.001 35 14 0.01 0.1 1 10 Revision 1.00 2022-03-28 FP150R12N3T7_B11 EconoPIM™3 module 8 Characteristics diagrams Forward characteristic (typical), Diode, Rectifier IF = f(VF) Transient thermal impedance, Diode, Rectifier Zth = f(t) 1 300 250 200 150 0.1 100 50 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.001 1.4 Output characteristic (typical), IGBT, Brake-Chopper IC = f(VCE) VGE = 15 V 200 0.01 0.1 1 10 Forward characteristic (typical), Diode, BrakeChopper IF = f(VF) 100 90 175 80 150 70 125 60 100 50 40 75 30 50 20 25 10 0 0 0.0 Datasheet 0.5 1.0 1.5 2.0 2.5 3.0 0.0 15 0.5 1.0 1.5 2.0 2.5 Revision 1.00 2022-03-28 FP150R12N3T7_B11 EconoPIM™3 module 8 Characteristics diagrams Temperature characteristic (typical), NTC-Thermistor R = f(TNTC) 100000 10000 1000 100 10 0 Datasheet 25 50 75 100 125 150 175 16 Revision 1.00 2022-03-28 FP150R12N3T7_B11 EconoPIM™3 module 9 Circuit diagram 9 Circuit diagram Figure 1 Datasheet 17 Revision 1.00 2022-03-28 FP150R12N3T7_B11 EconoPIM™3 module 10 Package outlines 10 Package outlines Figure 2 Datasheet 18 Revision 1.00 2022-03-28 FP150R12N3T7_B11 EconoPIM™3 module 11 Module label code 11 Module label code Module label code Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1–5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 15 30 Example 71549142846550549911530 71549142846550549911530 Figure 3 2 Datasheet 19 Revision 1.00 2022-03-28 FP150R12N3T7_B11 EconoPIM™3 module Revision history Revision history Document revision Date of release Description of changes 0.10 2021-08-23 Initial version 1.00 2022-03-28 Final datasheet Datasheet 20 Revision 1.00 2022-03-28 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2022-03-28 Published by Infineon Technologies AG 81726 Munich, Germany © 2022 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-ABB764-002 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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