FDZ197PZ

FDZ197PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET June 2009 FDZ197PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET -20 V, -3.8 A, 64 mΩ Features Max rDS(on) = 64 mΩ at VGS = -4.5 V, ID = -2.0 A Max rDS(on) = 71 mΩ at VGS = -2.5 V, ID = -2.0 A Max rDS(on) = 79 mΩ at VGS = -1.8 V, ID = -1.0 A Max rDS(on) = 95 mΩ at VGS = -1.5 V, ID = -1.0 A Occupies only 1.5 mm2 of PCB area.Less than 50% of the area of 2 x 2 BGA Ultra-thin package: less than 0.65 mm height when mounted to PCB HBM ESD protection level > 4400V (Note3) RoHS Compliant General Description Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" WLCSP packaging process, the FDZ197PZ minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on). Applications Battery management Load switch Battery protection PIN1 S S D D S G TOP WL-CSP 1x1.5 Thin BOTTOM MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed Power Dissipation Power Dissipation TA = 25°C TA = 25°C (Note 1a) (Note 1b) TA = 25°C (Note 1a) Ratings -20 ±8 -3.8 -15 1.9 0.9 -55 to +150 Units V V A W °C Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 65 133 °C/W Package Marking and Ordering Information Device Marking 7 Device FDZ197PZ Package WL-CSP 1x1.5 Thin Reel Size 7” Tape Width 8 mm Quantity 5000 units ©2009 Fairchild Semiconductor Corporation FDZ197PZ Rev.C1 1 www.fairchildsemi.com FDZ197PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250 µA, VGS = 0 V ID = -250 µA, referenced to 25 °C VDS = -16 V, VGS = 0 V VGS = ±8 V, VDS = 0 V -20 -10 -1 ±10 V mV/°C µA µA On Characteristics VGS(th) ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = -250 µA ID = -250 µA, referenced to 25 °C VGS = -4.5 V, ID = -2.0 A VGS = -2.5 V, ID = -2.0 A rDS(on) Static Drain to Source On Resistance VGS = -1.8 V, ID = -1.0 A VGS = -1.5 V, ID = -1.0 A VGS = -4.5 V, ID = -2.0 A, TJ =125 °C gFS Forward Transconductance VDD = -5 V, ID = -3.8 A -0.4 -0.5 2.7 46 53 59 68 54 21 64 71 79 95 84 S mΩ -1.0 V mV/°C Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -10 V, VGS = 0 V, f = 1 MHz 1180 190 160 1570 255 225 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge VGS = 0V to -4.5V VDD = -10 V, ID = -3.8 A VDD = -10 V, ID = -3.8 A, VGS = -4.5 V, RGEN = 6 Ω 5.8 5.9 311 280 18 1.5 4.7 12 12 498 448 25 ns ns ns ns nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = -1.1 A (Note 2) -0.6 194 344 -1.2 310 550 V ns nC IF = -3.8 A, di/dt = 100 A/µs Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 65 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 133 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied. ©2009 Fairchild Semiconductor Corporation FDZ197PZ Rev.C1 2 www.fairchildsemi.com FDZ197PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 15 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.5 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX -ID, DRAIN CURRENT (A) 12 VGS = -4.5 V 2.0 VGS = -1.5 V 9 6 3 VGS = -3 V VGS = -2.5 V VGS = -1.8 V VGS = -1.5 V 1.5 VGS = -1.8 V VGS = -2.5 V 1.0 VGS = -3 V VGS = -4.5 V PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 0 0 1 2 3 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0.5 0 3 6 9 12 15 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 150 SOURCE ON-RESISTANCE (mΩ) 1.4 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID = -2 A VGS = -4.5 V ID = -2 A PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 1.2 rDS(on), DRAIN TO 120 1.0 90 TJ = 125 oC 0.8 60 TJ = 25 oC 0.6 -75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 30 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature 15 -IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX Figure 4. On-Resistance vs Gate to Source Voltage 20 10 VGS = 0 V -ID, DRAIN CURRENT (A) 12 VDS = -5 V 1 TJ = 150 oC 9 6 TJ = 150 oC TJ = 25 oC 0.1 TJ = 25 oC 3 TJ = -55 oC 0.01 TJ = -55 oC 0 0.0 0.5 1.0 1.5 2.0 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2009 Fairchild Semiconductor Corporation FDZ197PZ Rev.C1 3 www.fairchildsemi.com FDZ197PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE (V) 4.5 ID = -3.8 A CAPACITANCE (pF) VDD = -8 V 3000 3.0 VDD = -10 V 1000 Ciss 1.5 VDD = -12 V Coss f = 1 MHz VGS = 0 V Crss 0.0 0 3 6 9 12 15 18 Qg, GATE CHARGE (nC) 100 0.1 1 -VDS, DRAIN TO SOURCE VOLTAGE (V) 10 20 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 20 10 100 µs -ID, DRAIN CURRENT (A) 10 -IAS, AVALANCHE CURRENT (A) 1 ms TJ = 25 oC 1 10 ms THIS AREA IS LIMITED BY rDS(on) 1 TJ = 125 oC 0.1 SINGLE PULSE TJ = MAX RATED RθJA = 133 oC/W TA = 25 C o 100 ms 1s DC 0.1 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 50 tAV, TIME IN AVALANCHE (ms) -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Unclamped Inductive Switching Capability 10 -Ig, GATE LEAKAGE CURRENT (A) -2 Figure 10. Forward Bias Safe Operating Area 200 10 10 10 10 10 10 10 -3 VGS = 0 V P(PK), PEAK TRANSIENT POWER (W) 100 SINGLE PULSE RθJA = 133 oC/W TA = 25 oC -4 -5 TJ = 125 oC 10 -6 -7 TJ = 25 oC -8 1 0.5 -4 10 10 -3 -9 0 3 6 9 12 15 10 -2 10 -1 1 10 100 1000 -VGS, GATE TO SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Gate Leakage Current vs Gate to Source Voltage Figure 12. Single Pulse Maximum Power Dissipation ©2009 Fairchild Semiconductor Corporation FDZ197PZ Rev.C1 4 www.fairchildsemi.com FDZ197PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZθJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE 0.01 0.005 -4 10 10 -3 RθJA = 133 C/W o NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA 10 -2 10 -1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDZ197PZ Rev.C1 5 www.fairchildsemi.com FDZ197PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET ©2009 Fairchild Semiconductor Corporation FDZ197PZ Rev.C1 6 www.fairchildsemi.com FDZ197PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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The datasheet is for reference information only. Rev. I40 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production ©2009 Fairchild Semiconductor Corporation FDZ197PZ Rev.C1 www.fairchildsemi.com