FDZ371PZ

FDZ371PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET July 2009 FDZ371PZ P-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -3.7 A, 75 mΩ Features Max rDS(on) = 75 mΩ at VGS = -4.5 V, ID = -2.0 A Max rDS(on) = 90 mΩ at VGS = -2.5 V, ID = -1.5 A Max rDS(on) = 110 mΩ at VGS = -1.8 V, ID = -1.0 A Max rDS(on) = 150 mΩ at VGS = -1.5 V, ID = -1.0 A Occupies only 1.0 mm2 of PCB area.Less than 30% of the area of 2 x 2 BGA Ultra-thin package: less than 0.4 mm height when mounted to PCB HBM ESD protection level >4.4kV typical (Note 3) RoHS Compliant ® tm General Description Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" Thin WLCSP packaging process, the FDZ371PZ minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on). Applications Battery management Load switch Battery protection Pin 1 S D G S Pin 1 BOTTOM WL-CSP 1.0X1.0 Thin TOP MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed Power Dissipation Power Dissipation TA = 25°C TA = 25°C (Note 1a) (Note 1b) TA = 25°C (Note 1a) Ratings -20 ±8 -3.7 -12 1.7 0.5 -55 to +150 Units V V A W °C Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 75 260 °C/W Package Marking and Ordering Information Device Marking K Device FDZ371PZ Package WL-CSP 1.0X1.0 Thin Reel Size 7” Tape Width 8 mm Quantity 5000 units ©2009 Fairchild Semiconductor Corporation FDZ371PZ Rev.C 1 www.fairchildsemi.com FDZ371PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250 µA, VGS = 0 V ID = -250 µA, referenced to 25 °C VDS = -16 V, VGS = 0 V VGS = ±8 V, VDS = 0 V -20 22 -1 ±10 V mV/°C µA µA On Characteristics VGS(th) ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = -250 µA ID = -250 µA, referenced to 25 °C VGS = -4.5 V, ID = -2.0 A VGS = -2.5 V, ID = -1.5A rDS(on) Static Drain to Source On Resistance VGS = -1.8 V, ID = -1.0 A VGS = -1.5 V, ID = -1.0 A VGS = -4.5 V, ID = -2.0 A, TJ =125°C gFS Forward Transconductance VDD = -5 V, ID = -3.3 A -0.35 -0.6 -4 55 65 80 100 80 14 75 90 110 150 124 S mΩ -1.0 V mV/°C Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -10 V, VGS = 0 V, f = 1 MHz 750 110 100 1000 145 150 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge VGS = -4.5 V, VDD = -10 V, ID = -3.3 A VDD = -10 V, ID = -3.3 A, VGS = -4.5 V, RGEN = 6 Ω 5.9 9.1 124 88 12 1.1 3.4 12 18 198 140 17 ns ns ns ns nC nC nC Drain-Source Diode Characteristics IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = -1.3 A (Note 2) -0.7 61 29 -1.1 -1.2 98 47 A V ns nC IF = -3.3 A, di/dt = 100 A/µs Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 75 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 260 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied. ©2009 Fairchild Semiconductor Corporation FDZ371PZ Rev.C 2 www.fairchildsemi.com FDZ371PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 12 VGS = - 4.5 V -ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -3.5 V VGS = - 3.0 V 2.5 VGS = -1.5 V 9 VGS = -2.5 V 2.0 VGS = -1.8 V 6 VGS = - 1.8 V 1.5 VGS = -2.5 V VGS = -3.0 V VGS = -3.5 V 3 VGS = -1.5 V PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 1.0 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VGS = -4.5 V 0 0.0 0.5 0 3 6 -ID, DRAIN CURRENT (A) 9 12 0.5 1.0 1.5 2.0 2.5 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 400 SOURCE ON-RESISTANCE (mΩ) 1.6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID = -2.0 A VGS = -4.5 V 1.4 rDS(on), DRAIN TO PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 300 ID = -2.0 A 1.2 1.0 0.8 0.6 -75 200 TJ = 125 oC 100 TJ = 25 oC -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature 12 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX -ID, DRAIN CURRENT (A) -IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 10 VGS = 0 V 9 VDS = -5 V 1 TJ = 150 oC 6 TJ = 150 oC 0.1 TJ = 25 oC 3 TJ = 25 oC TJ = -55 oC 0.01 TJ = -55 oC 0 0.5 1.0 1.5 2.0 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2009 Fairchild Semiconductor Corporation FDZ371PZ Rev.C 3 www.fairchildsemi.com FDZ371PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) ID = -3.3 A VDD = -8 V 2000 1000 CAPACITANCE (pF) Ciss 3.0 VDD = -10 V VDD = -12 V 1.5 Coss 100 0.0 0 3 6 9 12 15 Qg, GATE CHARGE (nC) f = 1 MHz VGS = 0 V Crss 50 0.1 1 -VDS, DRAIN TO SOURCE VOLTAGE (V) 10 20 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 10 -Ig, GATE LEAKAGE CURRENT (A) 4 20 10 -ID, DRAIN CURRENT (A) 100 us 1 ms THIS AREA IS LIMITED BY rds(on) 10 3 VDS = 0 V 10 2 1 10 1 10 10 10 -1 TJ = 125 oC 10 ms 100 ms 1s 10 s DC 0.1 SINGLE PULSE TJ = MAX RATED RθJA = 260 oC/W TA = 25 oC -2 TJ = 25 oC 0.01 0.1 -3 1 10 60 0 3 6 9 12 15 -VDS, DRAIN to SOURCE VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Forward Bias Safe Operating Area 200 100 P(PK), PEAK TRANSIENT POWER (W) Figure 10. Gate Leakage Current vs Gate to Source Voltage SINGLE PULSE RθJA = 260 C/W o o 10 TA = 25 C 1 0.1 -4 10 10 -3 10 -2 10 -1 1 10 100 1000 t, PULSE WIDTH (s) Figure 11. Single Pulse Maximum Power Dissipation ©2009 Fairchild Semiconductor Corporation FDZ371PZ Rev.C 4 www.fairchildsemi.com FDZ371PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER 1 NORMALIZED THERMAL IMPEDANCE, ZθJA 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE RθJA = 260 C/W o NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA 0.001 -4 10 10 -3 10 -2 10 -1 1 10 10 2 10 3 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDZ371PZ Rev.C 5 www.fairchildsemi.com FDZ371PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET Dimensional Outline and Pad Layout ©2009 Fairchild Semiconductor Corporation FDZ371PZ Rev.C 6 www.fairchildsemi.com FDZ371PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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The datasheet is for reference information only. Rev. I40 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production ©2009 Fairchild Semiconductor Corporation FDZ371PZ Rev.C www.fairchildsemi.com