BSS84

BSS84 P-Channel MOSFET SOT-23 Plastic-Encapsulate MOSFETS SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter 2. SOURCE 3. DRAIN MARKING: SP or B 8 4 ■MAXIMUM RATINGS 最大額定值 Characteristic 特性參數 Symbol 符號 Max 最大值 Unit 單位 Drain-Source Voltage 漏極-源極電壓 BVDSS -50 V Gate- Source Voltage 栅極-源極電壓 VGS +20 V Drain Current (continuous) 漏極電流-連續 IDR -130 mA Drain Current (pulsed) 漏極電流-脉冲 IDRM -520 mA ■THERMAL CHARACTERISTICS 熱特性 Characteristic 特性 Total Device Dissipation 總耗散功率 TA=25℃環境溫度爲 25℃ Derate above25℃ 超過 25℃遞減 Symbol 符號 Max 最大值 Unit 單位 PD 200 mW 1.8 mW/℃ 350 ℃/W Thermal Resistance Junction to Ambient 熱阻 RΘJA Junction and Storage Temperature 結溫和儲存溫度 TJ,Tstg http://www.anbonsemi.com TEL:886-755-23776891 FAX:886-755-81482182 Page 1 150℃,-55to+150℃ Document ID Issued Date Revised Date Revision Page. AS-3150048 2003/03/08 2012/05/16 D 3 BSS84 P-Channel MOSFET SOT-23 Plastic-Encapsulate MOSFETS ■ELECTRICAL CHARACTERISTICS 電特性 (TA=25℃ unless otherwise noted 如無特殊說明，溫度爲 25℃) Characteristic 特性參數 Symbol 符號 Min 最小值 Typ 典型值 Max 最大值 Unit 單位 Drain-Source Breakdown Voltage 漏極-源極擊穿電壓(ID =-250uA,VGS=0V) BVDSS -50 — — V Gate Threshold Voltage 栅極開启電壓(ID =-250uA,VGS= VDS) VGS(th) -1.0 — -2.5 V Diode Forward Voltage Drop 内附二極管正向壓降(ISD=-200mA,VGS=0V) VSD — — -1.5 V Zero Gate Voltage Drain Current 零栅壓漏極電流(VGS=0V, VDS= -50V) (VGS=0V, VDS=-50V, TA=125℃) IDSS — — -15 -60 uA Gate Body Leakage 栅極漏電流(VGS=+20V, VDS=0V) IGSS — — +10 nA RDS(ON) — — 10 Ω Input Capacitance 輸入電容 (VGS=0V, VDS=-25V,f=1MHz) CISS — 73 — pF Common Source Output Capacitance 共源輸出電容(VGS=0V, VDS=-25V,f=1MHz) COSS — 10 — pF Turn-ON Time 开启時間 (VDS=-30V, ID=-270mA, RGEN=6Ω) t(on) — — 5 ns Turn-OFF Time 关断時間 (VDS=-30V, ID=-270mA, RGEN=6Ω) t(off) — — 20 ns trr — 10 — ns Static Drain-Source On-State Resistance 静态漏源導通電阻(ID=-100mA,VGS=-5V) Reverse Recovery Time 反向恢复時間 (ISD=-100mA, VGS=0V) 1. FR-5=1.0×0.75×0.062in. 2. Alumina=0.4×0.3×0.024in.99.5%alumina. 3. Pulse Width