BSS84

UMW R UMW BSS84 P-Channel Enhancement Mode MOSFET SOT–23 ■ Features ● VDS (V) = -50V ● ID = -0.13 A ● RDS(ON) ≤ 10Ω (VGS = -5V) MARKING 1. GATE 2. SOURCE 3. DRAIN P. D Y ■ Absolute Maximum Ratings Ta = 25℃ unless otherwise specified Symbol Rating Unit Drain-Source Voltage Parameter VDSS -50 V Gate-Source Voltage VGSS ±20 V Drain Current * – Continuous -130 ID – Pulsed mA -520 Total Power Dissipation * Pd Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range 300 mW RθJA 417 ℃/W Tj, TSTG -55 to +150 ℃ * Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; ■ Electrical Characteristics Ta = 25℃ unless otherwise specified Parameter Symbol Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage IGSS Test conditons VGS = 0V, ID = -250μA Min Typ -50 Static Drain-Source On-Resistance VGS(th) VDS = -50V, VGS = 0V, TJ = 25℃ RDS (ON) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VGS = ±20V, VDS = 0V VDS = VGS, ID = -1mA -0.8 VGS = -5V, ID = -100mA VDS = -25V, ID = -0.1A Unit V VDS = -50V, VGS = 0V, TJ = 125℃ Gate Threshold Voltage Max -15 μA -60 μA ±10 nA -2.0 V 10 Ω 0.05 S VDS = -25V, VGS = 0V,f = 1.0MHz 45 pF 25 pF 12 pF Turn-On Delay Time tD(ON) VDD = -30V, ID = -0.27A, 10 ns Turn-Off Delay Time tD(OFF) RGEN = 50Ω, VGS = -10V 18 ns www.umw-ic.com 1 友台半导体有限公司 UMW R UMW BSS84 P-Channel Enhancement Mode MOSFET Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.umw-ic.com Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° 2 Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° 友台半导体有限公司