GMBT8050L

ISSUED DATE :2004/08/25 REVISED DATE : GM BT8050L Description Package Dimensions N P N E P I TA X I A L T R A N S I S T O R The GMBT8050L(large current) is designed for general purpose amplifier applications. REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0C 10 C Absolute Maximum Ratings at Ta = 25 : Parameter Junction Temperature Storage Temperature C ollector to Base Voltage C ollector to Emitter Voltage Emitter to Base Voltage C ollector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 40 25 6 1.5 250 V V V A mW Unit Characteristics Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE hFE hFE fT C ob at Ta = 25 : Min. 40 25 6 45 120 40 100 Typ. Max. 100 100 0.5 1.2 1 500 10 MHz pF Unit V V V nA nA V V V IC=100uA , IE=0 IC=2mA, IB=0 IE=100uA, IC=0 VCB=35V, IE=0 VEB=6V,IC=0 IC=800mA, IB=80mA IC=800mA, IB=80mA VCE=1V,IC=10mA VCE=1V, IC=5mA VCE=1V, IC=100mA VCE=1V, IC=800mA VCE=10V, IC=20mA, f=100MHz VCB=10V, f=1MHz Test Conditions Classification Of hFE Rank hFE DLC 120 - 200 DLD 160 - 300 DLE 250 - 500 1/2 ISSUED DATE :2004/08/25 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 2/2