MMBT5551

MMBT5551 TRANSISTOR(NPN) FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching MARKING: G1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 180 160 6 600 300 416 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR SOT–23 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Symbol V(BR)CBO V(BR)CEO ICBO IEBO hFE(1) hFE(2) hFE(3) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. * * * * * * Test IC=1mA, IB=0 IE=10µA, IC=0 conditions Min 180 160 6 Typ Max Unit V V V IC=100µA, IE=0 V(BR)EBO VCB=120V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=10V,IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz 100 80 100 50 50 50 300 0.15 0.2 1 1 300 6 nA nA VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT Cob V V V V MHz pF * * CLASSIFICATION OF hFE (2) RANK RANGE L 100-200 H 200-300 １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MMBT5551 18 Static Characteristic 90uA COMMON EMITTER Ta=25℃ 500 hFE —— IC COMMON EMITTER VCE=5V Ta=100℃ COLLECTOR CURRENT IC (mA) 15 80uA 70uA DC CURRENT GAIN hFE 12 60uA 50uA 40uA Ta=25℃ 100 9 6 30uA IB=20uA 3 0 0 2 4 6 8 10 12 10 1 10 100 COLLECTOR-EMITTER VOLTAGE VCE (V) 200 COLLECTOR CURRENT IC (mA) 1.0 VBEsat —— β=10 IC 0.3 VCEsat —— β=10 IC 0.8 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) Ta=25℃ 0.1 Ta=100℃ 0.6 Ta=100℃ Ta=25℃ 0.4 0.2 0.1 0.01 1 10 100 200 1 10 100 200 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) VBE 200 100 —— IC 100 Cob / Cib —— VCB / VEB f=1MHz IE=0 / IC=0 COMMON EMITTER VCE=5V IC (mA) Ta=100℃ COLLECTOR CURRENT Ta=25℃ 10 CAPACITANCE C (pF) Cib Ta=25℃ 10 Cob 1 0.2 0.4 BASE-EMITTER VOLTAGE 0.6 VBE(V) 0.8 1.0 1 0.1 1 10 20 REVERSE VOLTAGE 0.4 V (V) fT 150 —— IC PC —— Ta VCE=10V TRANSITION FREQUENCY fT (MHz) Ta=25℃ COLLECTOR POWER DISSIPATION PC (W) 1 10 0.3 100 0.2 0.1 50 0.0 3 20 30 0 25 50 75 100 125 150 COLLECTOR CURRENT IC (mA) AMBIENT TEMPERATURE Ta (℃ ) ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５