1N4150

1N4150 HIGH-SPEED SWITCHING DIODE DO - 35 .020 TYP. (0.51) 1.083(27.5) MIN FEATURES ● High reliability ● High forward current capability APPLICATIONS ● High speed switch and general purpose use in computer and industrial applications .150(3.8) MAX .079 MAX (2.0) CONSTRUCTION ● Silicon epitaxial planar 1.083(27.5) MIN Dimensions in inches and (millimeters) ABSOLUTE MAXIMUM RATINGS Parameter Repetitive peak reverse voltage Reverse Vltage Peak forward surge current Forward current Average forward current (TJ=25℃) Test Conditions Type Symbol VRRM VR tp=1uS Value 100 Unit V V 75 75 IFSM IF IFAV PV TJ TsTg 75 53 A mA mA mW VR=0 Power dissipation Junction temperature Storge temperature range 300 -65 ~ +175 ℃ ℃ MAXIMUM THERMAL RESISTANCE Parameter Junction ambient (TJ=25℃) Test Conditions Symbol RthJA Value 500 Unit K/W On PC board 50mm*50mm*1.6mm ELECTRICAL CHARACTERISTICS Parameter TJ=25℃ Test Conditions IF=1mA IF=10mA Symbol VF VF VF VF VF IR IR CD trr Min 0.54 0.66 0.76 0.82 0.87 Typ Max 0.62 0.74 0.86 0.92 1.0 100 100 2.5 4 Unit V V V V V nA uA pF ns Forward voltage IF=50mA IF=100mA IF=200mA VR=50V VR=50V, Tj=150℃ VR=0, f=1MHZ, VHF=50mA IF= IR=10…100mA,RL=100Ω Reverse current Diode capacitance Reverse recovery time ~ 423 ~ RATING AND CHARACTERISTIC CURVES 1N4150 FIG. 1 - MAXIMUM PERMISSIBLE CONTINUOUS FORWARD CURRENT VS. AMBIENT TEMPERATURE 400 FIG. 2 -FORWARD CURRENT VS.FORWARD VOLTAGE 600 TJ=175°C TYPICAL VALUES 300 IF (m A) IF (m A) 200 400 TJ=25°C TYPICAL VALUES 200 100 0 0 100 Tamb(°C) 200 0 0 1 VF (V) 2 FIG.3-REVERSE CURRENT VS. JUNCTION TEMPERATURE 1000 1.2 FIG. 4 -DIODE CAPACITANCE VS. REVERSE VOLTAGE (TYPICAL VALUES) 100 1.0 IR (uA) 10 VR=75V TYPICAL VALUES Cd (pF) 0.8 1 0.6 VR=20V TYPICAL VALUES 0.1 0.4 0 0.01 0 100 TJ((°C) 200 10 VR(V) 20 f=1MHZ,TJ=25°C ~ 424 ~