1N4150

1N4150 FAST SWITCHING SURFACE MOUNT DIODES VOLTAGE 50 Volts POWER 500 mWatts FEATURES • Fast switching Speed. • Surface Mount Package Ideally Suited For Automatic Insertion. • Silicon Epitaxal Planar Construction. • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: Mini Melf, Glass • Terminals: Solderable per MIL-STD-750, Method 2026 • Polarity: See Diagram Below • Approx. Weight: 0.13 grams • Mounting Position: Any • Ordering information: Suffix : “ -35 ” to order DO-35 Package • Packing information B - 2K per Bulk box T/R - 10K per 13" plastic Reel T/B - 5K per horiz. tape & Ammo box 3.0 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TJ =25°C unless otherwise noted) PARAMETER Reverse Voltage Peak Reverse Voltage RMS Voltage Maximum Average Forward Current at TA =25 C And f > 50Hz Surge Forward Current at t < 1s and TJ =25 Power Dissipation at Tamb= 25 O O O SYMBOL VR VR M VR M S IF (A V ) IF S M PT O T VF IR CJ trr RθJ A TJ ,TS 1N4150 50 50 35 200 500 500 1.0 0.1 4 4 350 -65 to +175 UNITS V V V mA mA mW V µA pF ns O C C Maximum Forward Voltage at IF =200mA Maximum Leakage Current at VR = 50V Maximum Capacitance (Note 1) Maximum Reverse Recovery Time (Note 2) Typcal Thermal Resistance Junction Temperature and Storage Temperature Range C/W O C NOTE: 1. CJ at VR=0, f=1MHZ 2. From IF=10mA to IR=1mA, VR=6Volts, RL=100Ω STAD-FEB.06.2009 PAGE . 1 1N4150 1000 10 FORWARD CURRENT, mA TJ =150OC REVERSE CURRENT,uA 100 TJ =25OC 1.0 TJ =125OC 10 0.1 TJ =85OC 1.0 TJ =55OC 0.01 0.1 TJ =25OC 0.01 0 1.0 2.0 0.001 0 10 20 30 40 50 FORWARD VOLTAGE, VOLTS REVERSE VOLTAGE, VOLTS FORWARD VOLTAGE LEAKAGE CURRENT P D , POWER DISSIPATION (mW) 4.0 500 DIODE CAPACITANCE, pF 3.0 400 300 2.0 200 1.0 100 0 0 2 4 6 8 0 50 100 150 O 200 REVERSE VOLTAGE, VOLTS AMBIENT TEMPERATURE( C) POWER DERATING TYPICAL CAPATICANCE STAD-FEB.06.2009 PAGE . 2