IDT70V06L15J

HIGH-SPEED 3.3V 16K x 8 DUAL-PORT STATIC RAM Features x x IDT70V06S/L x x True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial: 15/20/25/35/55ns (max.) – Industrial: 20/25/35/55ns (max.) Low-power operation – IDT70V06S Active: 400mW (typ.) Standby: 3.3mW (typ.) – IDT70V06L Active: 380mW (typ.) Standby: 660mW (typ.) IDT70V06 easily expands data bus width to 16 bits or more using the Master/Slave select when cascading more than one device x x x x x x x x x M/S = VIH for BUSY output flag on Master M/S = VIL for BUSY input on Slave Interrupt Flag On-chip port arbitration logic Full on-chip hardware support of semaphore signaling between ports Fully asynchronous operation from either port Battery backup operation—2V data retention TTL-compatible, single 3.3V (±0.3V) power supply Available in 68-pin PGA and PLCC, and a 64-pin TQFP Industrial temperature range (-40°C to +85°C) is available for selected speeds Functional Block Diagram OEL R/WL OER CER R/WR CEL I/O0L- I/O7L I/O Control I/O Control , I/O0R-I/O7R BUSYL (1,2) BUSYR Address Decoder 14 (1,2) A13L A0L MEMORY ARRAY 14 Address Decoder A13R A0R CEL OEL R/WL SEML INTL(2) NOTES: 1. (MASTER): BUSY is output; (SLAVE): BUSY is input. 2. BUSY outputs and INT outputs are non-tri-stated push-pull. ARBITRATION INTERRUPT SEMAPHORE LOGIC CER OER R/WR M/S SEMR INTR(2) 2942 drw 01 MARCH 2000 1 ©2000 Integrated Device Technology, Inc. D SC-2942/7 6.07 IDT70V06S/L High-Speed 16K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Description The IDT70V06 is a high-speed 16K x 8 Dual-Port Static RAM. The IDT70V06 is designed to be used as a stand-alone 128K-bit Dual-Port Static RAM or as a combination MASTER/SLAVE Dual-Port Static RAM for 16-bit-or-more word systems. Using the IDT MASTER/ SLAVE Dual-Port Static RAM approach in 16-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. This device provides two independent ports with separate control, address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode. Fabricated using IDT’s CMOS high-performance technology, these devices typically operate on only 400mW of power. The IDT70V06 is packaged in a ceramic 68-pin PGA and PLCC and a 64-pin thin quad flatpack (TQFP). I/O1L I/O0L N/C R/WL SEML CEL 4 3 Pin Configurations(1,2,3) INDEX I/O2L I/O3L I/O4L I/O5L GND I/O6L I/O7L VCC GND I/O0R I/O1R I/O2R VCC I/O3R I/O4R I/O5R I/O6R 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 9 8 7 6 5 N/C A13L VCC A12L A11L A10L A9L A8L A7L A6L 2 1 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 OEL IDT70V06J J68-1(4) 68-Pin PLCC Top View(5) A5L A4L A3L A2L A1L A0L INTL BUSYL GND M/S BUSYR INTR A0R A1R A2R A3R A4R 2942 drw 02 44 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 I/O7R N/C SEMR CER R/WR N/C A13R GND A12R A11R A10R A9R A8R A7R A6R A5R OER I/O1L I/O0L R/WL SEML CEL A13L VCC A12L A11L A10L A9L A8L 53 52 OEL INDEX 61 60 63 62 51 50 58 57 56 55 I/O2L I/O3L I/O4L I/O5L GND I/O6L I/O7L VCC GND I/O0R I/O1R I/O2R VCC I/O3R I/O4R I/O5R 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 49 64 59 54 A7L A6L A5L 48 47 46 45 44 A4L A3L A2L A1L A0L 70V06PF PN-64(4) 64-Pin TQFP Top View(5) 43 42 41 40 39 38 37 36 35 34 INTL BUSYL GND M/S , BUSYR INTR A0R A1R A2R A3R A4R 2942 drw 03 NOTES: 1. All VCC pins must be connected to power supply. 2. All GND pins must be connected to ground supply. 3. J68-1 package body is approximately .95 in x .95 in x .17 in PN-64 package body is approximately 14mm x 14mm x 1.4mm. 4. This package code is used to reference the package diagram. 5. This text does not indicate orientation of the actual part marking. 17 18 19 21 22 20 32 25 27 28 16 23 24 26 29 30 31 A6R 33 I/O6R I/O7R SEMR CER A13R GND A12R A11R A10R R/WR OER A9R A8R A7R 2 A5R IDT70V06S/L High-Speed 16K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Pin Configurations(1,2,3) (con't.) 51 11 53 10 A7L 55 09 A9L A5L 52 A6L 54 A8L 50 A4L 49 A3L 48 A2L 47 A1L 46 44 42 A0L BUSY L M/S 40 38 INT R A1R 36 A3R 35 A4R 32 A7R 30 A9R 34 A5R 33 A6R 31 A8R 29 A10R 27 A12R 25 A13R 45 43 41 39 37 INT L GND BUSY R A0R A2R 56 57 08 A11L A10L 07 58 59 VCC A12L 61 N/C 60 A13L IDT70V06G G68-1(4) 68-Pin PGA Top View(5) 28 A11R 26 GND 24 N/C 06 62 63 05 SEM L CE L 04 64 65 OE L R/WL 67 66 I/O0L N/C 1 3 68 I/O1L I/O2L I/O4L 2 01 A INDEX NOTES: 1. All VCC pins must be connected to power supply. 2. All GND pins must be connected to ground supply. 3. Package body is approximately 1.18 in x 1.18 in x .16 in. 4. This package code is used to reference the package diagram. 5. This text does not indicate orientation of the actual part marking. 23 22 SEM R CE R 20 OE R 5 7 9 11 13 15 GND I/O7L GND I/O1R VCC I/O4R 6 I/O6L D 8 VCC E 10 12 14 16 I/O0R I/O2R I/O3R I/O5R F G H J 21 R/W R 03 02 18 19 I/O7R N/C 17 I/O6R K L 2942 drw 04 , 4 I/O3L I/O5L B C Pin Names Left Port Right Port Names Chip Enable Read/Write Enable Output Enable Address Data Input/Output Semaphore Enable Interrupt Flag Busy Flag Master or Slave Select Power Ground 2942 tbl 01 CEL R/ WL CER R/ WR OEL A0L - A13L I/O0L - I/O7L OER A 0R - A13R I/O0R - I/O7R SEML INTL BUSYL SEMR INTR BUSYR M/ S VCC GND 6.42 3 IDT70V06S/L High-Speed 16K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Truth Table I: Non-Contention Read/Write Control Inputs(1) Outputs CE H L L X R/ W OE X X L H SEM H H H X I/O0-7 High-Z DATAIN DATAOUT High-Z Deselected: Power-Down Write to Memory Read Memory Outputs Disabled Mode X L H X NOTE: 2942 tbl 02 1. A0L — A13L ≠ A0R — A 13R Truth Table II: Semaphore Read/Write Control(1) Inputs Outputs CE H H L R/W H ↑ X OE L X X SEM L L L I/O0-7 DATAOUT DATAIN ____ Mode Read Data in Semaphore Flag Write I/O0 into Semaphore Flag Not Allowed 2942 tbl 03 NOTE: 1. There are eight semaphore flags written to via I/O0 and read from I/O0 - I/O7. These eight semaphores are addressed by A 0 - A2. 4 IDT70V06S/L High-Speed 16K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Absolute Maximum Ratings(1) Symbol V TERM(2) Rating Terminal Voltage with Respect to GND Temperature Under Bias Storage Temperature DC Output Current Commercial & Industrial -0.5 to +4.6 Unit V Maximum Operating Temperature and Supply Voltage(1) Grade Ambient Temperature Commercial 0OC to +70OC -40OC to +85OC 0V 0V 3.3V + 0.3V 3.3V + 0.3V 2942 tbl 05 GND Vcc TBIAS TSTG IOUT -55 to +125 -55 to +125 50 o C C Industrial o NOTE: 1. This is the parameter TA. mA 2942 tbl 04 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VTERM must not exceed Vcc + 0.3V. Recommended DC Operating Conditions Symbol VCC GND Parameter Supply Voltage Ground Input High Voltage Input Low Voltage Min. 3.0 0 2.0 -0.5 (1) Typ. 3.3 0 ____ Max. 3.6 0 VCC+0.3(2) 0.8 Unit V V V V 2942 tbl 06 Capacitance (TA = +25°C, f = 1.0MHz) Symbol CIN COUT Parameter (1) VIH Conditions VIN = 3dV VOUT = 3dV Max. 9 10 Unit pF pF 2942 tbl 07 VIL ____ Input Capacitance Output Capacitance NOTES: 1. VIL> -1.5V for pulse width less than 10ns. 2. VTERM must not exceed VCC +0.3V. NOTES: 1. This parameter is determined by device characterization but is not production tested. 2. 3dV references the interpolated capacitance when the input and output signals switch from 0V to 3V or from 3V to 0V. DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range (VCC = 3.3V ± 0.3V) 70V06S Symbol |ILI| |ILO| VOL VOH Parameter Input Leakage Current(1) Output Leakage Current Output Low Voltage Output High Voltage Test Conditions VCC = 3.6V, VIN = 0V to VCC VOUT = 0V to VCC IOL = +4mA IOH = -4mA Min. ___ 70V06L Min. ___ Max. 10 10 0.4 ___ Max. 5 5 0.4 ___ Unit µA µA V V 2942 tbl 08 ___ ___ ___ ___ 2.4 2.4 NOTE: 1. At Vcc < 2.0V input leakages are undefined. 6.42 5 IDT70V06S/L High-Speed 16K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(1) (VCC = 3.3V ± 0.3V) 70V06X15 Com'l Only Symbol ICC Parameter Dynamic Operating Current (Both Ports Active) Test Condition Version COM'L IND COM'L IND COM'L IND COM'L IND COM'L IND S L S L S L S L S L S L S L S L S L S L Typ. (2) 150 140 ____ ____ 70V06X20 Com'l & Ind Typ. (2) 140 130 140 130 20 15 20 15 80 75 80 75 1.0 0.2 1.0 0.2 80 75 80 75 Max. 200 175 225 195 30 25 45 40 110 100 130 115 5 2.5 15 5 115 100 130 115 70V06X25 Com'l & Ind Typ. (2) 130 125 130 125 16 13 16 13 75 72 75 72 1.0 0.2 1.0 0.2 75 70 75 70 Max. 190 165 210 180 30 25 45 40 110 95 125 110 5 2.5 15 5 105 90 120 105 Unit mA mA mA mA mA mA mA mA mA mA Max. 215 185 ____ ____ CE = VIL, Outputs Open SEM = VIH f = fMAX (3) ISB1 Standby Current (Both Ports - TTL Level Inputs) CER = C EL = VIH SEMR = SEML = VIH f = fMAX (3) 25 20 ____ ____ 35 30 ____ ____ ISB2 Standby Current (One Port - TTL Level Inputs) CEL o r C ER = VIH Active Port Outputs Open, f=fMAX(3) 85 80 ____ ____ 120 110 ____ ____ ISB3 Full Standby Current (Both Ports CMOS Level Inputs) Both Ports C EL and CER > VCC - 0.2V, VIN > V CC - 0.2V or VIN < 0.2V, f = 0 (4) SEMR = SEML > VCC - 0.2V One Port C EL o r CER > VCC - 0.2V SEMR = SEML > VCC - 0.2V VIN > V CC - 0.2V or V IN < 0.2V Active Port Outputs Open, f = fMAX(3) 1.0 0.2 ____ ____ 5 2.5 ____ ____ ISB4 Full Standby Current (One Port CMOS Level Inputs) 85 80 ____ ____ 125 105 ____ ____ 2942 tbl 09a 70V06X35 Com'l & Ind Symbol ICC Parameter Dynamic Operating Current (Both Ports Active) Test Condition Version COM'L IND COM'L IND COM'L IND COM'L IND COM'L IND S L S L S L S L S L S L S L S L S L S L Typ. (2) 120 115 120 115 13 11 13 11 70 65 70 65 1.0 0.2 1.0 0.2 65 60 65 60 Max. 180 155 200 170 25 20 40 35 100 90 120 105 5 2.5 15 5 100 85 115 100 70V06X55 Com'l & Ind Typ. (2) 120 115 120 115 13 11 13 11 70 65 70 65 1.0 0.2 1.0 0.2 65 60 65 60 Max. 180 155 200 170 25 20 40 35 100 90 120 105 5 2.5 15 5 100 85 115 100 Unit mA mA mA mA mA mA mA mA mA mA CE = VIL, Outputs Open SEM = VIH f = fMAX(3) ISB1 Standby Current (Both Ports - TTL Level Inputs) CER = C EL = VIH SEMR = SEML = VIH f = fMAX(3) ISB2 Standby Current (One Port - TTL Level Inputs) CEL o r C ER = VIH Active Port Outputs Open, f=fMAX(3) ISB3 Full Standby Current (Both Ports CMOS Level Inputs) Both Ports C EL and CER > VCC - 0.2V, VIN > VCC - 0.2V or VIN < 0.2V, f = 0 (4) SEMR = SEML > VCC - 0.2V One Port C EL o r CER > VCC - 0.2V SEMR = SEML > VCC - 0.2V VIN > VCC - 0.2V or V IN < 0.2V Active Port Outputs Open, f = fMAX(3) ISB4 Full Standby Current (One Port CMOS Level Inputs) 2942 tbl 09b NOTES: 1. 'X' in part number indicates power rating (S or L) 2. VCC = 3.3, TA = +25°C. 3. At f = f MAX, address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/tRC, and using “AC Test Conditions” of input levels of GND to 3V. 4. f = 0 means no address or control lines change. 6 IDT70V06S/L High-Speed 16K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges 3.3V 3.3V 590Ω DATAOUT BUSY INT DATAOUT 435Ω 30pF 435Ω 5pF* 590Ω AC Test Conditions Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels Output Load GND to 3.0V 3ns Max. 1.5V 1.5V Figures 1 and 2 2942 tbl 10 , 2942 drw 05 Figure 1. AC Output Test Load Figure 2. Output Test Load (For tLZ, tHZ, tWZ, tOW) *Including scope and jig. Timing of Power-Up Power-Down CE ICC ISB 2942 drw 06 tPU tPD , 6.42 7 IDT70V06S/L High-Speed 16K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(4) 70V06X15 Com'l Only Symbol READ CYCLE tRC tAA tACE tAOE tOH tLZ tHZ tPU tPD tSOP tSAA Read Cycle Time Address Access Time Chip Enable Access Time (3) Output Enable Access Time (3) Output Hold from Address Change Output Low-Z Time(1,2) Output High-Z Time (1,2) Chip Enable to Power Up Time (1,2) Chip Disable to Power Down Time (1,2) Semaphore Flag Update Pulse (OE or S EM) Semaphore Address Access (3) 15 ____ ____ 70V06X20 Com'l & Ind Min. Max. 70V06X25 Com'l & Ind Min. Max. Unit Parameter Min. Max. 20 ____ ____ 25 ____ ____ ns ns ns ns ns ns ns ns ns ns ns 2942 tbl 11a 15 15 10 ____ 20 20 12 ____ 25 25 13 ____ ____ ____ ____ ____ ____ ____ 3 3 ____ 3 3 ____ 3 3 ____ ____ ____ ____ 10 ____ 12 ____ 15 ____ 0 ____ 0 ____ 0 ____ 15 ____ 20 ____ 25 ____ 10 ____ 10 ____ 10 ____ 15 20 25 70V06X35 Com'l & Ind Symbol READ CYCLE tRC tAA tACE tAOE tOH tLZ tHZ tPU tPD tSOP tSAA Read Cycle Time Address Access Time Chip Enable Access Time (3) Output Enable Access Time (3) 70V06X55 Com'l & Ind Min. Max. Unit Parameter Min. Max. 35 ____ ____ 55 ____ ____ ns ns ns ns ns ns ns ns ns ns ns 2942 tbl 11b 35 35 20 ____ 55 55 30 ____ ____ ____ ____ ____ Output Hold from Address Change Output Low-Z Time (1,2) 3 3 ____ 3 3 ____ ____ ____ Output High-Z Time (1,2) Chip Enable to Power Up Time (1,2) Chip Disable to Power Down Time (1,2) 15 ____ 25 ____ 0 ____ 0 ____ 35 ____ 50 ____ Semaphore Flag Update Pulse (OE or S EM) Semaphore Address Access (3) 15 ____ 15 ____ 35 55 NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 2). 2. This parameter is guaranteed but not tested. 3. To access SRAM, CE = VIL, SEM = V IH. 4. 'X' in part number indicates power rating (S or L). 8 IDT70V06S/L High-Speed 16K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Waveform of Read Cycles(5) tRC ADDR tAA (4) tACE tAOE (4) (4) CE OE R/W tLZ DATAOUT (1) tOH VALID DATA (4) tHZ (2) BUSYOUT tBDD (3,4) 2942 drw 07 NOTES: 1. Timing depends on which signal is asserted las OE or CE. 2. Timing depends on which signal is de-asserted first CE or OE. 3. tBDD delay is required only in cases where the opposite port is completing a write operation to the same address location. For simultaneous read operations BUSY has no relation to valid output data. 4. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA or tBDD. 5. SEM = VIH. 6.42 9 IDT70V06S/L High-Speed 16K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges AC Electrical Characteristics Over the Operating Temperature and Supply Voltage(5) 70V06X15 Com'l Only Symbol WRITE CYCLE tWC tEW tAW tAS tWP tWR tDW tHZ tDH tWZ tOW tSWRD tSPS Write Cycle Time Chip Enable to End-of-Write (3) 70V06X20 Com'l & Ind Min. Max. 70V06X25 Com'l & Ind Min. Max. Unit Parameter Min. Max. 15 12 12 0 12 0 10 ____ ____ ____ ____ ____ ____ ____ ____ 20 15 15 0 15 0 15 ____ ____ ____ ____ ____ ____ ____ ____ 25 20 20 0 20 0 15 ____ ____ ____ ____ ____ ____ ____ ____ ns ns ns ns ns ns ns ns ns ns ns ns ns 2942 tbl 12a Address Valid to End-of-Write Address Set-up Time (3) Write Pulse Width Write Recovery Time Data Valid to End-of-Write Output High-Z Time Data Hold Time (4) (1,2) (1,2) 10 ____ 12 ____ 15 ____ 0 ____ 0 ____ 0 ____ Write Enable to Output in High-Z 10 ____ ____ 12 ____ ____ 15 ____ ____ Output Active from End-of-Write (1,2,4) 0 5 5 0 5 5 0 5 5 SEM Flag Write to Read Time SEM Flag Contention Window ____ ____ ____ 70V06X35 Com'l & Ind Symbol WRITE CYCLE tWC tEW tAW tAS tWP tWR tDW tHZ tDH tWZ tOW tSWRD tSPS Write Cycle Time Chip Enable to End-of-Write (3) 70V06X55 Com'l & Ind Min. Max. Unit Parameter Min. Max. 35 30 30 0 25 0 15 ____ ____ ____ ____ ____ ____ ____ ____ 55 45 45 0 40 0 30 ____ ____ ____ ____ ____ ____ ____ ____ ns ns ns ns ns ns ns ns ns ns ns ns ns 2942 tbl 12b Address Valid to End-of-Write Address Set-up Time Write Pulse Width Write Recovery Time Data Valid to End-of-Write Output High-Z Time Data Hold Time (4) Write Enable to Output in High-Z Output Active from End-of-Write (1,2) (1,2) (3) 15 ____ 25 ____ 0 ____ 0 ____ 15 ____ ____ 25 ____ ____ (1,2,4) 0 5 5 0 5 5 SEM Flag Write to Read Time SEM Flag Contention Window ____ ____ NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2). 2. This parameter is guaranteed but not tested. 3. To access SRAM, CE = V IL, SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time. 4. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary over voltage and temperature, the actual tDH will always be smaller than the actual tOW . 5. 'X' in part number indicates power rating (S or L). 10 IDT70V06S/L High-Speed 16K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Write Cycle No. 1, R/W Controlled Timing(1,3,5,8) tWC ADDRESS tHZ (7) OE tAW CE or SEM (9) tAS (6) R/W tWZ DATAOUT (4) (7) tWP (2) tWR (3) tOW (4) tDW DATAIN tDH 2942 drw 08 Timing Waveform of Write Cycle No. 2, CE Controlled Timing(1,3,5,8) tWC ADDRESS tAW CE or SEM R/W (9) (6) tAS tEW (2) tWR (3) tDW DATAIN tDH 2942 drw 09 NOTES: 1. R/W or CE must be HIGH during all address transitions. 2. A write occurs during the overlap (tEW or tWP) of a LOW CE and a LOW R/W for memory array writing cycle. 3. tWR is measured from the earlier of CE or R/W (or SEM or R/W) going HIGH to the end of write cycle. 4. During this period, the I/O pins are in the output state and input signals must not be applied. 5. If the CE or SEM LOW transition occurs simultaneously with or after the R/W low transition, the outputs remain in the High-impedance state. 6. Timing depends on which enable signal is asserted last, CE, or R/W. 7. Timing depends on which enable signal is de-asserted first, CE, or R/W. 8. If OE is LOW during R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O drivers to turn off and data to be placed on the bus for the required tDW. If OE is HIGH during an R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified tWP. 9. To access SRAM, CE = VIL and SEM = VIH. To access Semaphore, CE = VIH and SEM = VIL. tEW must be met for either condition. 611 .42 IDT70V06S/L High-Speed 16K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Semaphore Read after Write Timing, Either Side(1) tSAA A0-A2 VALID ADDRESS tAW tWR tEW tDW DATA0 R/W tAS tWP DATAIN VALID tDH tSOP DATA OUT VALID(2) VALID ADDRESS tACE tOH SEM tSWRD tAOE tSOP OE Write Cycle Read Cycle 2942 drw 10 NOTES: 1. CE = VIH for the duration of the above timing (both write and read cycle). 2. “DATAOUT VALID” represents all I/O's (I/O0 - I/O7) equal to the semaphore value. Timing Waveform of Semaphore Write Contention(1,3,4) A0"A"-A2"A" MATCH SIDE (2) "" A R/W"A" SEM"A" tSPS A0"B"-A2"B" MATCH SIDE (2) "B" R/W"B" SEM"B" 2942 drw 11 NOTES: 1. DOR = DOL = VIL, CER = CEL = VIH, Semaphore Flag is released from both sides (reads as ones from both sides) at cycle start. 2. “A” may be either left or right port. “B” is the opposite port from “A”. 3. This parameter is measured from R/W“A” or SEM“A” going HIGH to R/W“B” or SEM“B” going HIGH. 4. If t SPS is not satisfied, the semaphore will fall positively to one side or the other, but there is no guarantee which side will obtain the flag. 12 IDT70V06S/L High-Speed 16K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(6) 70V06X15 Com'l Ony Symbol Parameter Min. Max. 70V06X20 Com'l & Ind Min. Max. 70V06X25 Com'l & Ind Min. Max. Unit BUSY TIMING (M/S = VIH) tBAA tBDA tBAC tBDC tAPS tBDD tWH BUSY Access Time from Address Match BUSY Disable Time from Address Not Matched BUSY Access Time from Chip Enable LOW BUSY Disable Time from Chip Enable HIGH Arbitration Priority Set-up Time (2) ____ 15 15 15 15 ____ ____ 20 20 20 17 ____ ____ 20 20 20 17 ____ ns ns ns ns ns ns ns ____ ____ ____ ____ ____ ____ ____ ____ ____ 5 ____ 5 ____ 5 ____ BUSY Disable to Valid Data(3) Write Hold After B USY(5) 18 ____ 30 ____ 30 ____ 12 15 17 BUSY TIMING (M/S = VIL) tWB tWH BUSY Input to Write (4) Write Hold After B USY (5) 0 12 ____ 0 15 ____ 0 17 ____ ns ns ____ ____ ____ PORT-TO-PORT DELAY TIMING tWDD tDDD Write Pulse to Data Delay (1) Write Data Valid to Read Data Delay (1) ____ ____ 30 25 ____ ____ 45 35 ____ ____ 50 35 ns ns 2942 tbl 13a 70V06X35 Com'l & Ind Symbol Parameter Min. Max. 70V06X55 Com'l & Ind Min. Max. Unit BUSY TIMING (M/S = VIH) tBAA tBDA tBAC tBDC tAPS tBDD tWH BUSY Access Time from Address Match BUSY Disable Time from Address Not Matched BUSY Access Time from Chip Enable LOW BUSY Disable Time from Chip Enable HIGH Arbitration Priority Set-up Time (2) ____ 20 20 20 20 ____ ____ 45 40 40 35 ____ ns ns ns ns ns ns ns ____ ____ ____ ____ ____ ____ 5 ____ 5 ____ BUSY Disable to Valid Data Write Hold After B USY (5) (3) 35 ____ 40 ____ 25 25 BUSY TIMING (M/S = VIL) tWB tWH BUSY Input to Write (4) Write Hold After B USY(5) 0 25 ____ 0 25 ____ ns ns ____ ____ PORT-TO-PORT DELAY TIMING tWDD tDDD Write Pulse to Data Delay (1) Write Data Valid to Read Data Delay (1) ____ ____ 60 45 ____ ____ 80 65 ns ns 2942 tbl 13b NOTES: 1. Port-to-port delay through SRAM cells from writing port to reading port, refer to "Timing Waveform of Read With BUSY (M/S = VIH) or "Timing Waveform of Write With Port-To-Port Delay (M/S=VIL)". 2. To ensure that the earlier of the two ports wins. 3. tBDD is a calculated parameter and is the greater of 0, tWDD – tWP (actual) or tDDD – tDW (actual). 4. To ensure that the write cycle is inhibited during contention. 5. To ensure that a write cycle is completed after contention. 6. "X" is part numbers indicates power rating (S or L). 613 .42 IDT70V06S/L High-Speed 16K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Write with Port-To-Port Read and BUSY(2,4,5) (M/S = VIH) tWC ADDR"A" MATCH tWP R/W"A" tDW DATAIN "A" tAPS ADDR"B" tBAA BUSY"B" tWDD DATAOUT "B" tDDD NOTES: 1. To ensure that the earlier of the two ports wins. t APS is ignored for M/S = VIL (SLAVE). 2. CEL = CER = VIL 3. OE = VIL for the reading port. 4. If M/S = VIL(slave) then BUSY is input. Then for this example BUSY“A” = VIH and BUSY“B” input is shown above. 5. All timing is the same for left and right port. Port "A" may be either left or right port. Port "B" is the port opposite from Port "A". (3) 2942 drw 12 tDH VALID (1) MATCH tBDA tBDD VALID 14 IDT70V06S/L High-Speed 16K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Write with BUSY tWP R/W"A" tWB(3) BUSY"B" tWH (1) R/W"B" NOTES: 1. tWH must be met for both BUSY input (slave) output master. 2. BUSY is asserted on Port “B” Blocking R/ W“B”, until BUSY “B” goes HIGH. 3. tWB is only for the slave version. (2) 2942 drw 13 Waveform of BUSY Arbitration Controlled by CE Timing(1) (M/S = VIH) ADDR"A" and "B" ADDRESSES MATCH CE "A" tAPS CE "B" tBAC BUSY "B" 2942 drw 14 (2) tBDC Waveform of BUSY Arbitration Cycle Controlled by Address Match Timing(1) (M/S = VIH) ADDR"A" tAPS ADDR"B" tBAA (2) ADDRESS "N" MATCHING ADDRESS "N" tBDA BUSY"B" 2942 drw 15 NOTES: 1. All timing is the same for left and right ports. Port “A” may be either the left or right port. Port “B” is the port opposite from “A”. 2. If tAPS is not satisfied, the BUSY signal will be asserted on one side or another but there is no guarantee on which side BUSY will be asserted. 615 .42 IDT70V06S/L High-Speed 16K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(1) 70V06X15 Com'l Only Symbol INTERRUPT TIMING tAS tWR tINS tINR Address Set-up Time Write Recovery Time Interrupt Set Time Interrupt Reset Time 0 0 ____ ____ 70V06X20 Com'l & Ind Min. Max. 70V06X25 Com'l & Ind Min. Max. Unit Parameter Min. Max. 0 0 ____ ____ 0 0 ____ ____ ns ns ns ns 2942 tbl 14a ____ ____ ____ 15 15 20 20 20 20 ____ ____ ____ 70V06X35 Com'l & Ind Symbol INTERRUPT TIMING tAS tWR tINS tINR Address Set-up Time Write Recovery Time Interrupt Set Time Interrupt Reset Time 0 0 ____ ____ 70V06X55 Com'l & Ind Min. Max. Unit Parameter Min. Max. 0 0 ____ ____ ns ns ns ns 2942 tbl 14b ____ ____ 25 25 40 40 ____ ____ NOTE: 1. 'X' in part number indicates power rating (S or L). Waveform of Interrupt Timing(1) tWC ADDR"A" tAS (3) INTERRUPT SET ADDRESS (2) tWR (4) CE"A" R/W"A" tINS INT"B" 2942 drw 16 (3) NOTES: 1. All timing is the same for left and right ports. Port “A” may be either the left or right port. Port “B” is the port opposite from “A”. 2. See Interrupt Truth Table III. 3. Timing depends on which enable signal (CE or R/W) is asserted last. 4. Timing depends on which enable signal ( CE or R/W) is de-asserted first. 16 IDT70V06S/L High-Speed 16K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Waveform of Interrupt Timing(1) (con't.) tRC ADDR"B" tAS (3) INTERRUPT CLEAR ADDRESS (2) CE"B" OE"B" tINR INT"B" 2942 drw 17 (3) NOTES: 1. All timing is the same for left and right ports. Port “A” may be either the left or right port. Port “B” is the port opposite from “A”. 2. See Interrupt Truth Table III. 3. Timing depends on which enable signal (CE or R/ W) is asserted last. Truth Table III — Interrupt Flag(1) Left Port R/WL L X X X Right Port A13L-A0L 3FFF X X 3FFE CEL L X X L OEL X X X L INTL X X L (3) (2) R/WR X X L X CER X L L X OER X L X X A13R-A0R X 3FFF 3FFE X INTR L(2) H X X (3) Function Set Right I NTR Flag Reset Right I NTR Flag Set Left I NTL Flag Reset Left I NTL Flag 2942 tbl 15 H NOTES: 1. Assumes BUSYL = BUSY R = VIH. 2. If BUSY L = VIL, then no change. 3. If BUSY R = VIL, then no change. 617 .42 IDT70V06S/L High-Speed 16K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Truth Table IV — Address BUSY Arbitration Inputs Outputs A13L-A0L A13R-A0R NO MATCH MATCH MATCH MATCH CEL X H X L CER X X H L BUSYL(1) H H H (2) BUSYR(1) H H H (2) Function Normal Normal Normal Write Inhibit(3) 2942 tbl 16 NOTES: 1. Pins BUSYL and BUSYR are both outputs when the part is configured as a master. Both are inputs when configured as a slave. BUSY X outputs on the IDT70V06 are push pull, not open drain outputs. On slaves the BUSY X input internally inhibits writes. 2. L if the inputs to the opposite port were stable prior to the address and enable inputs of this port. H if the inputs to the opposite port became stable after the address and enable inputs of this port. If tAPS is not met, either BUSY L or BUSYR = LOW will result. BUSY L and BUSYR outputs cannot be LOW simultaneously. 3. Writes to the left port are internally ignored when BUSY L outputs are driving LOW regardless of actual logic level on the pin. Writes to the right port are internally ignored when BUSYR outputs are driving LOW regardless of actual logic level on the pin. Truth Table V — Example of Semaphore Procurement Sequence(1,2,3) Functions No Action Left Port Writes "0" to Semaphore Right Port Writes "0" to Semaphore Left Port Writes "1" to Semaphore Left Port Writes "0" to Semaphore Right Port Writes "1" to Semaphore Left Port Writes "1" to Semaphore Right Port Writes "0" to Semaphore Right Port Writes "1" to Semaphore Left Port Writes "0" to Semaphore Left Port Writes "1" to Semaphore D0 - D7 Left 1 0 0 1 1 0 1 1 1 0 1 D0 - D7 Right 1 1 1 0 0 1 1 0 1 1 1 Semaphore free Left port has semaphore token No change. Right side has no write access to semaphore Right port obtains semaphore token No change. Left port has no write access to semaphore Left port obtains semaphore token Semaphore free Right port has semaphore token Semaphore free Left port has semaphore token Semaphore free 2942 tbl 17 Status NOTES: 1. This table denotes a sequence of events for only one of the eight semaphores on the IDT70V06. 2. There are eight semaphore flags written to via I/O0 and read from all I/O's (I/O 0 - I/O7). These eight semaphores are addressed by A0 -A 2. 3. CE = VIH, SEM = VIL to access the semaphores. Refer to the Semaphore Read/Write Control Truth Table. Functional Description The IDT70V06 provides two ports with separate control, address and I/O pins that permit independent access for reads or writes to any location in memory. The IDT70V06 has an automatic power down feature controlled by CE. The CE controls on-chip power down circuitry that permits the respective port to go into a standby mode when not selected (CE = VIH). When a port is enabled, access to the entire memory array is permitted. (HEX). The left port clears the interrupt by reading address location 3FFE. Likewise, the right port interrupt flag (INTR) is set when the left port writes to memory location 3FFF (HEX) and to clear the interrupt flag (INTR), the right port must read the memory location 3FFF. The message (8 bits) at 3FFE or 3FFF is user-defined. If the interrupt function is not used, address locations 3FFE and 3FFF are not used as mail boxes, but as part of the random access memory. Refer to Truth Table III for the interrupt operation. Interrupts If the user chooses the interrupt function, a memory location (mail box or message center) is assigned to each port. The left port interrupt flag (INTL) is set when the right port writes to memory location 3FFE Busy Logic Busy Logic provides a hardware indication that both ports of the SRAM have accessed the same location at the same time. It also 18 IDT70V06S/L High-Speed 16K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges CE MASTER Dual Port SRAM BUSY (L) BUSY (R) CE SLAVE Dual Port SRAM BUSY (L) BUSY (R) BUSY (L) MASTER CE Dual Port SRAM BUSY (L) BUSY (R) SLAVE CE Dual Port SRAM BUSY (L) BUSY (R) BUSY (R) 2942 drw 18 Figure 3. Busy and chip enable routing for both width and depth expansion with IDT70V06 SRAMs. allows one of the two accesses to proceed and signals the other side that the SRAM is “busy”. The BUSY pin can then be used to stall the access until the operation on the other side is completed. If a write operation has been attempted from the side that receives a BUSY indication, the write signal is gated internally to prevent the write from proceeding. The use of BUSY logic is not required or desirable for all applications. In some cases it may be useful to logically OR the BUSY outputs together and use any BUSY indication as an interrupt source to flag the event of an illegal or illogical operation. If the write inhibit function of BUSY logic is not desirable, the BUSY logic can be disabled by placing the part in slave mode with the M/S pin. Once in slave mode the BUSY pin operates solely as a pin. Normal operation can be programmed by tying the BUSY pins HIGH. If desired, unintended write operations can be prevented to a port by tying the BUSY pin for that port LOW. The BUSY outputs on the IDT 70V06 RAM in master mode, are push-pull type outputs and do not require pull up resistors to operate. If these RAMs are being expanded in depth, then the busy indication for the resulting array requires the use of an external AND gate. enough for a BUSY flag to be output from the master before the actual write pulse can be initiated with the R/W signal. Failure to observe this timing can result in a glitched internal write inhibit signal and corrupted data in the slave. Semaphores The IDT70V06 is an extremely fast Dual-Port 16K x 8 CMOS Static RAM with an additional 8 address locations dedicated to binary semaphore flags. These flags allow either processor on the left or right side of the Dual-Port SRAM to claim a privilege over the other processor for functions defined by the system designer’s software. As an example, the semaphore can be used by one processor to inhibit the other from accessing a portion of the Dual-Port SRAM or any other shared resource. The Dual-Port SRAM features a fast access time, and both ports are completely independent of each other. This means that the activity on the left port in no way slows the access time of the right port. Both ports are identical in function to standard CMOS Static RAM and can be read from, or written to, at the same time with the only possible conflict arising from the simultaneous writing of, or a simultaneous READ/WRITE of, a non-semaphore location. Semaphores are protected against such ambiguous situations and may be used by the system program to avoid any conflicts in the non-semaphore portion of the Dual-Port SRAM. These devices have an automatic powerdown feature controlled by CE, the Dual-Port SRAM enable, and SEM, the semaphore enable. The CE and SEM pins control on-chip power down circuitry that permits the respective port to go into standby mode when not selected. This is the condition which is shown in Truth Table I where CE and SEM are both HIGH. Systems which can best use the IDT70V06 contain multiple processors or controllers and are typically very high-speed systems which are software controlled or software intensive. These systems can benefit from a performance increase offered by the IDT70V06's hardware semaphores, which provide a lockout mechanism without requiring complex programming. Software handshaking between processors offers the maximum in system flexibility by permitting shared resources to be allocated in varying configurations. The IDT70V06 does not use its semaphore flags Width Expansion with Busy Logic Master/Slave Arrays When expanding an IDT70V06 SRAM array in width while using BUSY logic, one master part is used to decide which side of the SRAM array will receive a BUSY indication, and to output that indication. Any number of slaves to be addressed in the same address range as the master use the BUSY signal as a write inhibit signal. Thus on the IDT70V06 RAM the BUSY pin is an output if the part is used as a master (M/S pin = VIH), and the BUSY pin is an input if the part used as a slave (M/S pin = VIL) as shown in Figure 3. If two or more master parts were used when expanding in width, a split decision could result with one master indicating BUSY on one side of the array and another master indicating BUSY on one other side of the array. This would inhibit the write operations from one port for part of a word and inhibit the write operations from the other port for part of the other word. The BUSY arbitration, on a master, is based on the chip enable and address signals only. It ignores whether an access is a read or write. In a master/slave array, both address and chip enable must be valid long 619 .42 DECODER IDT70V06S/L High-Speed 16K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges to control any resources through hardware, thus allowing the system designer total flexibility in system architecture. An advantage of using semaphores rather than the more common methods of hardware arbitration is that wait states are never incurred in either processor. This can prove to be a major advantage in very high-speed systems. How the Semaphore Flags Work The semaphore logic is a set of eight latches which are independent of the Dual-Port SRAM. These latches can be used to pass a flag, or token, from one port to the other to indicate that a shared resource is in use. The semaphores provide a hardware assist for a use assignment method called “Token Passing Allocation.” In this method, the state of a semaphore latch is used as a token indicating that a shared resource is in use. If the left processor wants to use this resource, it requests the token by setting the latch. This processor then verifies its success in setting the latch by reading it. If it was successful, it assumes control over the shared resource. If it was not successful in setting the latch, it determines that the right side processor has set the latch first, has the token and is using the shared resource. The left processor can then either repeatedly request that semaphore’s status or remove its request for that semaphore to perform another task and occasionally attempt again to gain control of the token via the set and test sequence. Once the right side has relinquished the token, the left side should succeed in gaining control. The semaphore flags are active LOW. A token is requested by writing a zero into a semaphore latch and is released when the same side writes a one to that latch. The eight semaphore flags reside within the IDT70V06 in a separate memory space from the Dual-Port SRAM. This address space is accessed by placing a LOW input on the SEM pin (which acts as a chip select for the semaphore flags) and using the other control pins (Address, OE, and R/W) as they would be used in accessing a standard Static RAM. Each of the flags has a unique address which can be accessed by either side through address pins A0 – A2. When accessing the semaphores, none of the other address pins has any effect. When writing to a semaphore, only data pin D0 is used. If a low level is written into an unused semaphore location, that flag will be set to a zero on that side and a one on the other side (see Truth Table V). That semaphore can now only be modified by the side showing the zero. When a one is written into the same location from the same side, the flag will be set to a one for both sides (unless a semaphore request from the other side is pending) and then can be written to by both sides. The fact that the side which is able to write a zero into a semaphore subsequently locks out writes from the other side is what makes semaphore flags useful in interprocessor communications. (A thorough discussion on the use of this feature follows shortly.) A zero written into the same location from the other side will be stored in the semaphore request latch for that side until the semaphore is freed by the first side. When a semaphore flag is read, its value is spread into all data bits so that a flag that is a one reads as a one in all data bits and a flag containing a zero reads as all zeros. The read value is latched into one side’s output register when that side's semaphore select (SEM) and output enable (OE) signals go active. This serves to disallow the semaphore from changing state in the middle of a read cycle due to a write cycle from the other side. Because of this latch, a repeated read of a semaphore in a test loop must cause either signal (SEM or OE) to go inactive or the output will never change. A sequence WRITE/READ must be used by the semaphore in order to guarantee that no system level contention will occur. A processor requests access to shared resources by attempting to write a zero into a semaphore location. If the semaphore is already in use, the semaphore request latch will contain a zero, yet the semaphore flag will appear as one, a fact which the processor will verify by the subsequent read (see Table V). As an example, assume a processor writes a zero to the left port at a free semaphore location. On a subsequent read, the processor will verify that it has written successfully to that location and will assume control over the resource in question. Meanwhile, if a processor on the right side attempts to write a zero to the same semaphore flag it will fail, as will be verified by the fact that a one will be read from that semaphore on the right side during subsequent read. Had a sequence of READ/WRITE been used instead, system contention problems could have occurred during the gap between the read and write cycles. It is important to note that a failed semaphore request must be followed by either repeated reads or by writing a one into the same location. The reason for this is easily understood by looking at the simple logic diagram of the semaphore flag in Figure 4. Two semaphore request latches feed into a semaphore flag. Whichever latch is first to present a zero to the semaphore flag will force its side of the semaphore flag LOW and the other side HIGH. This condition will continue until a one is written to the same semaphore request latch. Should the other side’s semaphore request latch have been written to a zero in the meantime, the semaphore flag will flip over to the other side as soon as a one is written into the first side’s request latch. The second side’s flag will now stay LOW until its semaphore request latch is written to a one. From this it is easy to understand that, if a semaphore is requested and the processor which requested it no longer needs the resource, the entire system can hang up until a one is written into that semaphore request latch. The critical case of semaphore timing is when both sides request a single token by attempting to write a zero into it at the same time. The semaphore logic is specially designed to resolve this problem. If simultaneous requests are made, the logic guarantees that only one side receives the token. If one side is earlier than the other in making the request, the first side to make the request will receive the token. If both requests arrive at the same time, the assignment will be arbitrarily made to one port or the other. One caution that should be noted when using semaphores is that semaphores alone do not guarantee that access to a resource is secure. As with any powerful programming technique, if semaphores are misused or misinterpreted, a software error can easily happen. Initialization of the semaphores is not automatic and must be handled via the initialization program at power-up. Since any semaphore request flag which contains a zero must be reset to a one, all semaphores on both sides should have a one written into them at initialization from both sides to assure that they will be free when needed. 20 IDT70V06S/L High-Speed 16K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Using Semaphores—Some Examples Perhaps the simplest application of semaphores is their application as resource markers for the IDT70V06’s Dual-Port SRAM. Say the 16K x 8 SRAM was to be divided into two 8K x 8 blocks which were to be dedicated at any one time to servicing either the left or right port. Semaphore 0 could be used to indicate the side which would control the lower section of memory, and Semaphore 1 could be defined as the indicator for the upper section of memory. To take a resource, in this example the lower 8K of Dual-Port SRAM, the processor on the left port could write and then read a zero in to Semaphore 0. If this task were successfully completed (a zero was read back rather than a one), the left processor would assume control of the lower 8K. Meanwhile the right processor was attempting to gain control of the resource after the left processor, it would read back a one in response to the zero it had attempted to write into Semaphore 0. At this point, the software could choose to try and gain control of the second 8K section by writing, then reading a zero into Semaphore 1. If it succeeded in gaining control, it would lock out the left side. Once the left side was finished with its task, it would write a one to Semaphore 0 and may then try to gain access to Semaphore 1. If Semaphore 1 was still occupied by the right side, the left side could undo its semaphore request and perform other tasks until it was able to write, then read a zero into Semaphore 1. If the right processor performs a similar task with Semaphore 0, this protocol would allow the two processors to swap 8K blocks of Dual-Port SRAM with each other. The blocks do not have to be any particular size and can even be variable, depending upon the complexity of the software using the semaphore flags. All eight semaphores could be used to divide the Dual-Port SRAM or other shared resources into eight parts. Semaphores can even be assigned different meanings on different sides rather than being given a common meaning as was shown in the example above. Semaphores are a useful form of arbitration in systems like disk interfaces where the CPU must be locked out of a section of memory during a transfer and the I/O device cannot tolerate any wait states. With the use of semaphores, once the two devices has determined which memory area was “off-limits” to the CPU, both the CPU and the I/O devices could access their assigned portions of memory continuously without any wait states. Semaphores are also useful in applications where no memory “WAIT” state is available on one or both sides. Once a semaphore handshake has been performed, both processors can access their assigned SRAM segments at full speed. Another application is in the area of complex data structures. In this case, block arbitration is very important. For this application one processor may be responsible for building and updating a data structure. The other processor then reads and interprets that data structure. If the interpreting processor reads an incomplete data structure, a major error condition may exist. Therefore, some sort of arbitration must be used between the two different processors. The building processor arbitrates for the block, locks it and then is able to go in and update the data structure. When the update is completed, the data structure block is released. This allows the interpreting processor to come back and read the complete data structure, thereby guaranteeing a consistent data structure. L PORT SEMAPHORE REQUEST FLIP FLOP D0 WRITE SEMAPHORE READ Figure 4. IDT70V06 Semaphore Logic D Q R PORT SEMAPHORE REQUEST FLIP FLOP Q D D0 WRITE SEMAPHORE READ 2942 drw 19 , 621 .42 IDT70V06S/L High-Speed 16K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges Ordering Information IDT XXXXX Device Type A Power 999 Speed A Package A Process/ Temperature Range Blank I(1) Commercial (0°C to +70°C) Industrial (-40°C to +85°C) PF G J 64-pin TQFP (PN64-1) 68-pin PGA (G68-1) 68-pin PLCC (J68-1) 15 20 25 35 55 S L Commercial Only Commercial & Industrial Commercial & Industrial Commercial & Industrial Commercial & Industrial Standard Power Low Power Speed in Nanoseconds 70V06 128K (16K x 8) 3.3V Dual-Port RAM 2942 drw 20 Datasheet Document History 3/10/99: Initiated datasheet document history Converted to new format Cosmetic and typographical corrections Page 2 and 3 Added additional notes to pin configurations Changed drawing format Replaced IDT logo Added 15 & 20ns speed grades Upgraded DC parameters Added Industrial Temperature information Changed ±200mV to 0mV CORPORATE HEADQUARTERS 2975 Stender Way Santa Clara, CA 95054 for SALES: 800-345-7015 or 408-727-6166 fax: 408-492-8674 www.idt.com 22 6/9/99: 11/10/99: 3/10/00: for Tech Support: 831-754-4613 DualPortHelp@idt.com The IDT logo is a registered trademark of Integrated Device Technology, Inc.