SKB02N120

SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: 1s. • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability • Pb-free lead plating; RoHS compliant 1 • Qualified according to JEDEC for target applications • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ C G E PG-TO-263-3-2 Type SKB02N120 Maximum Ratings Parameter VCE 1200V IC 2A Eoff 0.11mJ Tj 150°C Marking K02N120 Package PG-TO-263-3-2 Symbol VCE IC Value 1200 6.2 2.8 Unit V A Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, reflow soldering, MSL1 2 ICpul s IF 9.6 9.6 4.5 2 IFpul s VGE tSC Ptot Tj , Tstg Ts 9 ±20 10 62 -55...+150 245 V µs W °C VGE = 15V, 100V≤VCC≤1200V, Tj ≤ 150°C 1 2 J-STD-020 and JESD-022 Allowed number of short circuits: 1s. 1 Rev. 2.3 Oct 07 Power Semiconductors SKB02N120 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 1 00 µ A VCE(sat) V G E = 1 5 V , I C =2A T j =2 5 ° C T j =1 5 0 ° C Diode forward voltage VF V G E = 0V , I F = 2 A T j =2 5 ° C T j =1 5 0 ° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 10 0 µ A , V C E = V G E V C E = 12 0 0V , V G E = 0V T j =2 5 ° C T j =1 5 0 ° C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 2) Symbol RthJC RthJCD Conditions Max. Value 2.0 4.5 Unit K/W Symbol Conditions Value min. 1200 2.5 typ. 3.1 3.7 2.0 3 1.75 4 1.5 205 28 12 11 7 24 5 max. 3.6 4.3 2.5 Unit V µA 25 100 100 250 34 15 nC nH A nA S pF IGES gfs Ciss Coss Crss QGate LE IC(SC) V C E = 0V , V G E =2 0 V V C E = 20 V , I C =2A V C E = 25 V , V G E = 0V , f = 1 MH z V C C = 96 0 V, I C =2A V G E = 15 V V G E = 15 V , t S C ≤ 10 µ s 10 0 V ≤ V C C ≤ 12 0 0 V, Tj ≤ 150°C - 2) Allowed number of short circuits: 1s. 2 Rev. 2.3 Oct 07 Power Semiconductors SKB02N120 Switching Characteristic, Inductive Load, at Tj=25 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t F Qrr Irrm d i r r /d t T j =2 5 ° C , V R = 8 00 V , I F = 2 A, d i F / d t =2 5 0 A/ µ s 0.10 4.2 400 µC A A/µs 50 ns td(on) tr td(off) tf Eon Eoff Ets T j =2 5 ° C , V C C = 80 0 V, I C = 2A, V G E = 15 V /0 V , R G = 91 Ω , 1) L σ =1 8 0n H, 1) C σ = 4 0p F Energy losses include “tail” and diode reverse recovery. 23 16 260 61 0.16 0.06 0.22 30 21 340 80 0.21 0.08 0.29 mJ ns Symbol Conditions Value min. typ. max. Unit Switching Characteristic, Inductive Load, at Tj=150 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t F 1) Symbol Conditions Value min. typ. 26 14 290 85 0.27 0.11 0.38 max. 31 17 350 102 0.33 0.15 0.48 Unit td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 ° C V C C = 80 0 V, I C =2A , V G E = 15 V /0 V , R G = 91 Ω , 1) L σ =1 8 0n H, 1) C σ = 4 0p F Energy losses include “tail” and diode reverse recovery. T j =1 5 0 ° C V R = 8 00 V , I F = 2 A, d i F / d t =3 0 0 A/ µ s ns mJ - 90 ns Qrr Irrm d i r r /d t 0.30 6.7 110 µC A A/µs Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E. Power Semiconductors 3 Rev. 2.3 Oct 07 SKB02N120 12A Ic 10A tp=10µs 10A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 8A TC=80°C 6A TC=110°C 4A 1A 50µs 150µs 500µs 0.1A 20ms DC 2A Ic 0.01A 0A 10Hz 100Hz 1kHz 10kHz 100kHz 1V 10V 100V 1000V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 800V, VGE = +15V/0V, RG = 91Ω) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤ 150°C) 7A 60W 6A 50W 5A 4A 3A 2A 1A 0A 25°C 40W 30W 20W 10W 0W 25°C IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 50°C 75°C 100°C 125°C 50°C 75°C 100°C 125°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C) TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≤ 15V, Tj ≤ 150°C) Power Semiconductors 4 Rev. 2.3 Oct 07 SKB02N120 7A 6A 5A 4A 3A 2A 1A 0A 0V VGE=17V 15V 13V 11V 9V 7V 7A 6A 5A 4A 3A 2A 1A 0A 0V VGE=17V 15V 13V 11V 9V 7V IC, COLLECTOR CURRENT 1V 2V 3V 4V 5V 6V 7V IC, COLLECTOR CURRENT 1V 2V 3V 4V 5V 6V 7V VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25°C) VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150°C) 6A 5A 4A 3A 2A 1A 0A 3V Tj=+150°C Tj=+25°C Tj=-40°C VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE 7A 6V 5V IC=4A IC, COLLECTOR CURRENT 4V IC=2A 3V IC=1A 2V 1V 5V 7V 9V 11V 0V -50°C 0°C 50°C 100°C 150°C VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 20V) Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) Power Semiconductors 5 Rev. 2.3 Oct 07 SKB02N120 td(off) td(off) t, SWITCHING TIMES 100ns t, SWITCHING TIMES tf 100ns tf td(on) tr td(on) tr 10ns 0A 2A 4A 6A 8A 10ns 0Ω 50Ω 100Ω 150Ω IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, RG = 9 1 Ω, dynamic test circuit in Fig.E ) RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, IC = 2A, dynamic test circuit in Fig.E) 6V VGE(th), GATE-EMITTER THRESHOLD VOLTAGE td(off) 5V max. t, SWITCHING TIMES 100ns tf 4V 3V typ. td(on) 2V min. 1V tr 10ns -50°C 0°C 50°C 100°C 150°C 0V -50°C 0°C 50°C 100°C 150°C Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 2A, RG = 9 1 Ω, dynamic test circuit in Fig.E ) Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA) Power Semiconductors 6 Rev. 2.3 Oct 07 SKB02N120 2.0mJ *) Eon and Ets include losses due to diode recovery. 0.5mJ Ets* *) Eon and Ets include losses due to diode recovery. E, SWITCHING ENERGY LOSSES 1.5mJ E, SWITCHING ENERGY LOSSES 0.4mJ Ets* 0.3mJ 1.0mJ Eon* Eon* 0.2mJ 0.5mJ Eoff 0.1mJ Eoff 0.0mJ 0A 2A 4A 6A 8A 0.0mJ 0Ω 50Ω 100Ω 150Ω IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, RG = 9 1 Ω, dynamic test circuit in Fig.E ) RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, IC = 2A, dynamic test circuit in Fig.E ) 0.4mJ *) Eon and Ets include losses due to diode recovery. ZthJC, TRANSIENT THERMAL IMPEDANCE Ets* E, SWITCHING ENERGY LOSSES 0.3mJ Eon* 0.2mJ 10 K/W 0.2 0.1 0.05 0.02 0.01 R1 R2 0 D=0.5 10 K/W -1 R,(K/W) 0.66735 0.70472 0.62778 τ, (s) 0.04691 0.00388 0.00041 0.1mJ Eoff 10 K/W single pulse C1 =τ1/ R1 C2 =τ 2/ R2 -2 0.0mJ -50°C 0°C 50°C 100°C 150°C 1µs 10µs 100µs 1ms 10ms 100ms 1s Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 2A, RG = 9 1 Ω, dynamic test circuit in Fig.E ) tp, PULSE WIDTH Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T) Power Semiconductors 7 Rev. 2.3 Oct 07 SKB02N120 20V Ciss VGE, GATE-EMITTER VOLTAGE 15V 10V UCE=960V 5V C, CAPACITANCE 100pF Coss 0V 0nC 5nC 10nC 15n 10pF 0V Crss 10V 20V 30V QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 2A) VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz) 30µs 40A tsc, SHORT CIRCUIT WITHSTAND TIME 25µs IC(sc), SHORT CIRCUIT COLLECTOR CURRENT 11V 12V 13V 14V 15V 30A 20µs 15µs 20A 10µs 10A 5µs 0µs 10V 0A 10V 12V 14V 16V 18V 20V VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 1200V, start at Tj = 25°C) VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (100V≤VCE ≤1200V, TC = 25°C, Tj ≤ 150°C) Power Semiconductors 8 Rev. 2.3 Oct 07 SKB02N120 250ns 0.4µC Qrr, REVERSE RECOVERY CHARGE 200ns trr, REVERSE RECOVERY TIME 0.3µC IF=2A 150ns 0.2µC IF=1A 100ns IF=2A 0.1µC 50ns IF=1A 0ns 100A/µs 200A/µs 300A/µs 400A/µs 0.0µC 100A/µs 200A/µs 300A/µs 400A/µs d i F / d t , DIODE CURRENT SLOPE Figure 21. Typical reverse recovery time as a function of diode current slope (VR = 800V, Tj = 150°C, dynamic test circuit in Fig.E ) d i F / d t , DIODE CURRENT SLOPE Figure 22. Typical reverse recovery charge as a function of diode current slope (VR = 800V, Tj = 150°C, dynamic test circuit in Fig.E ) 10A 400A/µs OF REVERSE RECOVERY CURRENT Irr, REVERSE RECOVERY CURRENT IF=2A IF=1A d i r r /d t , DIODE PEAK RATE OF FALL 8A 300A/µs IF=1A IF=2A 6A 200A/µs 4A 100A/µs 2A 0A 100A/µs 200A/µs 300A/µs 400A/µs 0A/µs 100A/µs 200A/µs 300A/µs 400A/µs d i F / d t , DIODE CURRENT SLOPE Figure 23. Typical reverse recovery current as a function of diode current slope (VR = 800V, Tj = 150°C, dynamic test circuit in Fig.E ) diF/dt, DIODE CURRENT SLOPE Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR = 800V, Tj = 150°C, dynamic test circuit in Fig.E ) Power Semiconductors 9 Rev. 2.3 Oct 07 SKB02N120 7A 6A 5A TJ=150°C 4A 3A 2A 1A 0A 0V TJ=25°C 3.0V 2.5V VF, FORWARD VOLTAGE IF, FORWARD CURRENT IF=4A 2.0V IF=2A IF=1A 1.5V 1.0V 0.5V 1V 2V 3V 4V 0.0V 0°C 40°C 80°C 120°C VF, FORWARD VOLTAGE Figure 25. Typical diode forward current as a function of forward voltage Tj, JUNCTION TEMPERATURE Figure 26. Typical diode forward voltage as a function of junction temperature ZthJCD, TRANSIENT THERMAL IMPEDANCE D=0.5 10 K/W 0 0.2 0.1 0.05 R,(K/W) 0.10109 0.99478 1.07923 1.94890 R1 10 K/W -1 τ, (s) 0.38953 0.04664 0.00473 0.00066 R2 0. 01 0.0 2 single pulse 10 K/W 1µs -2 C1 =τ1/ R1 C2 =τ 2/ R2 10µs 100µs 1ms 10ms 100ms 1s tp, PULSE WIDTH Figure 27. Diode transient thermal impedance as a function of pulse width (D = tp / T) Power Semiconductors 10 Rev. 2.3 Oct 07 SKB02N120 PG-TO263-3-2 Power Semiconductors 11 Rev. 2.3 Oct 07 SKB02N120 i,v diF /dt tr r =tS +tF Qr r =QS +QF IF tS QS tr r tF 10% Ir r m t VR Ir r m QF dir r /dt 90% Ir r m Figure C. Definition of diodes switching characteristics τ1 Tj (t) p(t) r1 r2 τ2 τn rn r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure B. Definition of switching losses Figure E. Dynamic test circuit Leakage inductance Lσ =180nH, and stray capacity Cσ =40pF. Power Semiconductors 12 Rev. 2.3 Oct 07 SKB02N120 Edition 2006-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 11/5/07. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 13 Rev. 2.3 Oct 07