HFA90NH40R

PD -2.469 rev. B 02/99 HFA90NH40R HEXFRED Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters TM Ultrafast, Soft Recovery Diode LUG TERMINAL CATHODE a d BASE ANODE VR = 400V V F(typ.)ƒ = 1V IF(AV) = 90A Qrr (typ.) = 420nC IRRM(typ.) = 9.3A trr(typ.) = 36ns di(rec)M/dt (typ.)ƒ = 260A/µs Description HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. TM HALF-PAK Absolute Maximum Ratings (per Leg) Parameter VR IF @ TC = 25°C IF @ TC = 100°C IFSM EAS PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Cathode-to-Anode Voltage Continuous Forward Current Continuous Forward Current Single Pulse Forward Current  Non-Repetitive Avalanche Energy ‚ Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. 400 148 72 600 1.4 260 104 -55 to +150 Units V A mJ W °C Thermal - Mechanical Characteristics Parameter RthJC RthCS Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Weight Mounting Torque „ Terminal Torque Vertical Pull 2 inch Lever Pull Min. –––– –––– –––– 15 (1.7) 30 (3.4) –––– –––– Typ. –––– 0.15 26 (0.9) –––– –––– –––– –––– Max. 0.48 –––– –––– 25 (2.8) 40 (4.6) 80 40 Units °C/W K/W g (oz) lbf•in (N•m) lbf•in Note:  Limited by junction temperature ‚ L = 100µH, duty cycle limited by max TJ ƒ 125°C „ Mounting surface must be smooth, flat, free or burrs or other protrusions. Apply a thin even film or thermal grease to mounting surface. Gradually tighten each mounting bolt in 5-10 lbf•in steps until desired or maximum torque limits are reached. Module 1 HFA90NH40R PD-2.469 rev. B 02/99 Electrical Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified) Parameter VBR V FM Cathode Anode Breakdown Voltage Max Forward Voltage See Fig. 1 IRM CT LS Max Reverse Leakage Current See Fig. 2 Junction Capacitance Series Inductance See Fig. 3 Min. Typ. Max. Units 400 ––– ––– ––– ––– ––– ––– ––– ––– 1.1 1.3 1.0 1.0 1.5 180 7.0 ––– 1.3 1.5 1.2 6.0 8.0 260 ––– V V µA mA pF nH Test Conditions IR = 100µA IF = 90A IF = 180A IF = 90A, T J = 125°C VR = VR Rated TJ = 125°C, VR = 400V VR = 200V From top of terminal hole to mounting plane Dynamic Recovery Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified) Parameter trr trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 di(rec)M /dt1 di(rec)M /dt2 Reverse Recovery Time See Fig. 5 Peak Recovery Current See Fig. 6 Reverse Recovery Charge See Fig. 7 Peak Rate of Fall of Recovery Current During tb See Fig. 8 Min. Typ. Max. Units Test Conditions ––– 36 ––– IF = 1.0A, dif /dt = 200A/µs, VR = 30V ––– 90 140 ns TJ = 25°C ––– 160 240 TJ = 125°C IF = 90A ––– 9.3 17 TJ = 25°C A ––– 15 30 TJ = 125°C VR = 200V ––– 420 1100 TJ = 25°C nC ––– 1200 3200 TJ = 125°C dif /dt = 200A/µs ––– 360 ––– TJ = 25°C A/µs ––– 260 ––– TJ = 125°C 1/4-20 UNC-2B 30.40 (1.197) 29.90 (1.177) 19.69 (0.775) 18.42 (0.725) 4.11 (0.162) 3.86 (0.152) 12.83 (0.505) DIA. 12.57 (0.495) 4.11 (0.162) DIA. 3.86 (0.152) 19.18 (0.755) SQ. 18.92 (0.745) 1 LEAD ASSIGNMENTS 1 - CATHODE 2 - ANODE 14.10 (0.555) 13.59 (0.535) 15.75 (0.620) 14.99 (0.590) Dimensions in millimeters and inches HALF- PAK 2 39.62 (1.560) 38.61 (1.520) 3.30 (0.130) 3.05 (0.120) 2 HFA90NH40R 1000 10000 PD-2.469 rev. B 02/99 Reverse Current - IR (µA) 1000 TJ = 150°C T = 125 °C J Instantaneous Forward Current - I F (A) 100 10 100 TJ = 150°C TJ = 125°C TJ = 25°C 1 T = 25°C J 0.1 0 100 200 300 400 Junction Capacitance - C T (pF) 10 Fig. 2 - Typical Reverse Current vs. Reverse Voltage 10000 Reverse Voltage - VR (V) A TJ = 25°C 1000 1 0.4 0.8 1.2 1.6 2.0 Forward Voltage Drop - V FM (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 100 1 10 100 1000 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 Thermal Impedance - Z thJC (K/W) 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 P DM t 1 t2 Single Pulse (Thermal Resistance) 0.01 Notes: 1. Duty factor D = t / t 12 2. Peak TJ = PDM x Z thJC + TC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t 1 , Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 3 HFA90NH40R PD-2.469 rev. B 02/99 240 100 VR = 200V TJ = 125°C TJ = 25°C 200 VR = 200V TJ = 125 °C TJ = 25°C IF = 200A t rr - (ns) 160 I IRRM - (A) IF = 90A I F = 40A 10 I F = 200A I F = 90A 120 I F = 40A 80 40 100 di f /dt - (A/µs) 1000 1 100 di f /dt - (A/µs) 1000 Fig. 5 - Typical Reverse Recovery vs. dif/dt Fig. 6 - Typical Recovery Current vs. dif/dt 5000 10000 VR = 200V TJ = 125°C TJ = 25°C 4000 VR = 200V TJ = 125 °C TJ = 25°C 3000 IF = 200A I F = 90A di(rec)M/dt - (A/ µs) Q RR - (nC) 1000 I F = 40A I F = 90A IF = 200A 2000 I F = 40A 1000 0 100 di f /dt - (A/µs) 1000 100 100 di f /dt - (A/µs) 1000 Fig. 7 - Typical Stored Charge vs. dif/dt 4 Fig. 8 - Typical di(rec)M/dt vs. dif/dt HFA90NH40R 3 PD-2.469 rev. B 02/99 IF t rr ta tb 4 REVERSE RECOVERY CIRCUIT VR = 200V 0 Q rr I RRM 2 0.5 I RRM di(rec)M/dt 0.75 I RRM 5 0.01 Ω L = 70µH D.U.T. D IRFP250 S 1 di f /dt 4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 5. di(rec)M/dt - Peak rate of change of current during tb portion of trr dif/dt ADJUST G 1. dif/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current Fig. 9 - Reverse Recovery Parameter Test Circuit L = 100µH HIGH-SPEED SWITCH Rg = 25 ohm CURRENT MONITOR FREE-WHEEL DIODE + Vd = 50V Fig. 10 - Reverse Recovery Waveform and Definitions I L(PK) DUT DECAY TIME V (AVAL) V R(RATED) Fig. 11 - Avalanche Test Circuit and Waveforms WORLD HEADQUARTERS: EUROPEAN HEADQUARTERS: IR CANADA: IR GERMANY: IR ITALY: IR FAR EAST: IR SOUTHEAST ASIA: IR TAIWAN: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332. Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408. 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801. Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933. Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220. K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086. 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630. 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936. http://www.irf.com Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice. 5