SI4435DY

PD- 93768A Si4435DY HEXFET® Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel S 1 8 7 A D D D D S S G 2 VDSS = -30V RDS(on) = 0.020Ω 3 6 4 5 Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. T o p V ie w SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -30 -8.0 -6.4 -50 2.5 1.6 0.02 ± 20 -55 to + 150 Units V A W W/°C V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambientƒ Max. 50 Units °C/W www.irf.com 1 10/14/99 Si4435DY Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -30 ––– ––– ––– -1.0 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. Max. Units Conditions ––– ––– V V GS = 0V, ID = -250µA -0.019 ––– V/°C Reference to 25°C, ID = -1mA 0.015 0.020 VGS = -10V, ID = -8.0A ‚ Ω 0.026 0.035 VGS = -4.5V, ID = -5.0A ‚ ––– ––– V VDS = VGS, ID = -250µA 11 ––– S VDS = -15V, ID = -8.0A ––– -10 VDS = -24V, VGS = 0V µA ––– -10 VDS = -15V, VGS = 0V, TJ = 70°C ––– -100 VGS = -20V nA ––– 100 VGS = 20V 40 60 ID = -4.6A 7.1 ––– nC VDS = -15V 8.0 ––– VGS = -10V ‚ 16 24 VDD = -15V, VGS = -10V ‚ 76 110 ID = -1.0A ns 130 200 RG = 6.0Ω 90 140 R D = 15Ω 2320 ––– VGS = 0V 390 ––– pF VDS = -15V 270 ––– ƒ = 1.0kHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 34 33 -2.5 A -50 -1.2 51 50 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -2.5A, VGS = 0V TJ = 25°C, I F = -2.5A di/dt = -100A/µs ‚ D S ‚ Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ Surface mounted on FR-4 board, t ≤ 5sec. ‚ Pulse width ≤ 300µs; duty cycle ≤ 2%. 2 www.irf.com Si4435DY 1000 VGS -15V -10V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V TOP 1000 -I D , Drain-to-Source Current (A) 100 -I D , Drain-to-Source Current (A) 100 VGS -15V -10V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V TOP 10 10 -2.70V 1 1 -2.70V 20µs PULSE WIDTH TJ = 25 °C 1 10 100 0.1 0.1 0.1 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 ID = -8.0A -I D , Drain-to-Source Current (A) TJ = 25 ° C TJ = 150 ° C R DS(on) , Drain-to-Source On Resistance (Normalized) 1.5 10 1.0 0.5 1 2.0 V DS = -15V 20µs PULSE WIDTH 3.0 4.0 5.0 6.0 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 Si4435DY 3500 3000 2500 2000 -VGS , Gate-to-Source Voltage (V) VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 20 ID = -4.6A VDS = -15V 16 C, Capacitance (pF) Ciss 12 1500 1000 500 0 1 10 100 8 4 Coss Crss 0 0 10 20 30 40 50 60 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) -ISD , Reverse Drain Current (A) 10 TJ = 150 ° C -ID , Drain Current (A) I 100 100us TJ = 25 ° C 1 1ms 10 10ms 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 1.4 1 0.1 TA = 25 ° C TJ = 150 ° C Single Pulse 1 10 100 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com Si4435DY 8.0 0.20 0.10 -ID , Drain Current (A) -V GS(th) , Variace ( V ) 6.0 0.00 Id = -250µA -0.10 4.0 -0.20 2.0 -0.30 0.0 25 50 75 100 125 150 -0.40 -50 -25 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) T J , Temperature ( °C ) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Typical Vgs(th) Variance Vs. Juction Temperature 100 D = 0.50 Thermal Response (Z thJA ) 10 0.20 0.10 0.05 1 0.02 0.01 P DM t1 0.1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 t2 0.01 0.00001 0.0001 0.001 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 Si4435DY 0.10 R DS ( on) , Drain-to-Source On Resistance ( Ω ) 0.10 R DS(on) , Drain-to -Source Voltage ( Ω ) 0.08 0.08 0.06 0.06 VGS= - 4.5V 0.04 0.04 Id = -8.0A 0.02 0.02 VGS = -10V 0.00 0 10 20 30 40 0.00 2 4 6 8 10 12 14 16 -V GS, Gate -to -Source Voltage ( V ) -I D , Drain Current ( A ) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current 6 www.irf.com Si4435DY SO-8 Package Details D -B- DIM 5 I NCHES MIN .0532 .0040 .014 .0075 .189 .150 MAX .0688 .0098 .018 .0098 .196 .157 MILLIMETERS MIN 1.35 0.10 0.36 0.19 4.80 3.81 MAX 1.75 0.25 0.46 0.25 4.98 3.99 A 6 5 H 0.25 (.010) M AM 5 8 E -A- 7 A1 B C D E 1 2 3 4 e 6X K x 45° e1 A e e1 H K L θ .050 BASIC .025 BASIC .2284 .011 0.16 0° .2440 .019 .050 8° 0.72 (.028 ) 8X 1.27 BASIC 0.635 BASIC 5.80 0.28 0.41 0° 6.20 0.48 1.27 8° θ 0.10 (.004) L 8X 6 C 8X -CB 8X 0.25 (.010) NOTES: A1 M CASBS RECOMMENDED FOOTPRINT 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 1.27 ( .050 ) 3X 6.46 ( .255 ) 1.78 (.070) 8X SO-8 Part Marking www.irf.com 7 Si4435DY SO-8 Tape and Reel T E R M IN A L N U M B E R 1 1 2 .3 ( .4 8 4 ) 1 1 .7 ( .4 6 1 ) 8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 ) F E E D D IR E C T IO N N O TES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 3 3 0 .0 0 (1 2 .9 9 2 ) MAX. 1 4 .4 0 ( .5 66 ) 1 2 .4 0 ( .4 88 ) N O TE S : 1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 10/99 8 www.irf.com