SI4435DY

MOSFET SMD Type SMD Type P-Channel MOSFET SI4435DY (KI4435DY) SOP-8 ■ Features ● VDS=-30V ● RDS(on)=0.02Ω@VGS=-10V 1.50 0.15 0.21 -0.02 +0.04 ● RDS(on)=0.035Ω@VGS=-4.5V S G S 1 8 D S 2 7 D S 3 6 D G 4 5 D D Top View ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID -8.8 A Pulsed Drain Current IDM -50 A Maximum Power Dissipation PD 2.5 W RthJA 50 ℃/W TJ, Tstg -55 to 150 ℃ Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range www.kexin.com.cn 1 MOSFET SMD Type SMD Type SI4435DY (KI4435DY) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain–Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Drain-Source On-State Resistance * rDS(on) On-State Drain Current ID(on) Forward Transconductance* gfs VGS = 0 V, ID = –250 μA Min Typ Max -30 VDS = -30V , VGS = 0V -1 VDS = -15V , VGS = 0V , TJ =70℃ -5 VDS = VGS , ID = -250uA -1.0 -1.7 VDS = 0V , VGS = ±20V V ±100 nA 0.015 VGS = -4.5V , ID = -5.0A 0.022 0.035 0.02 -40 VDS = -15V , ID = -8A 11 VDS = -15V , VGS = -10V , ID = -4.6A 7.1 47 S 60 Qg Qgs Gate-Drain Charge Qgd 8 Turn-On Delay Time td(on) 16 24 tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr Continuous Source Current (Diode Conduction) IS Diode Forward Voltage* VSD * Pulse test; pulse width ≤300 μs, duty cycle≤ 2%. ■ Marking Marking 4435 KC**** www.kexin.com.cn VDD = -15V , RL = 15Ω , ID = -1A , VGEN = -10V , RG = 6Ω IF = -2.5A , di/dt = 100A/us nC 76 110 130 200 90 140 34 51 -2.5 IS = –2.5 A, VGS = 0 V Ω A Gate-Source Charge Rise Time μA -3 VGS = -10V , ID =-8.0A VDS =-5V , VGS = -10V Unit V Total Gate Charge Turn-Off Delay Time 2 Test conditions ns ns A -1.2 V