BU426AF

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU426AF DESCRIPTION ·With TO-3PML package ·High voltage ,high speed APPLICATIONS ·Intended for use in switching-mode color TV supply systems PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 900 400 10 6 8 3 65 150 -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case VALUE 2.08 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU426AF CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICES IEBO hFE PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=100mA; IB=0 IC=2.5A; IB=0.5A IC=4A; IB=1.25A IC=2.5A; IB=0.5A IC=4A; IB=1.25A VCE=900V ;VBE=0 TC=125℃ VEB=10V; IC=0 IC=0.6A ; VCE=5V 30 MIN 400 1.5 3.0 1.4 1.6 1.0 2.0 10 60 TYP. MAX UNIT V V V V V mA mA Switching times ton tstg tf Turn-on time Storage time IC=2.5A ; VCC=250V IB1=0.5A; IB2=-1A Fall time 0.5 IC=2.5A ; VCC=250V IB1=0.5A 0.5 3.5 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU426AF Fig.2 outline dimensions 3