IXFH26N50P

PolarHVTM HiPerFET Power MOSFET IXFH 26N50P IXFV 26N50P IXFV 26N50PS VDSS = ID25 = RDS(on) ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 500 V Maximum Ratings VGSS Continuos ± 30 V VGSM Transient ± 40 V ID25 TC = 25° C 26 A IDM TC = 25° C, pulse width limited by TJM 78 A IAR TC = 25° C 26 A EAR TC = 25° C 40 mJ EAS TC = 25° C 1.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω 10 V/ns PD TC = 25° C 400 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque (TO-247) FC Mounting force (PLUS220) Weight TO-247 PLUS220 & PLUS220SMD Symbol Test Conditions (TJ = 25° C, unless otherwise specified) 11..65/2.5..15 N/lb 6 5 g g Characteristic Values Min. Typ. Max. VGS = 0 V, ID = 250 µA 500 VGS(th) VDS = VGS, ID = 4 mA 3.0 IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % TJ = 125° C TO-247 (IXFH) D (TAB) PLUS220 (IXFV) G D D (TAB) S PLUS220SMD (IXFV_S) 1.13/10 Nm/lb.in. BVDSS © 2006 IXYS All rights reserved 500 V 26 A 230 m Ω 200 ns V 5.5 V ±100 nA 25 250 µA µA 230 mΩ G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features l International standard packages l Fast intrinsic diode l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages Easy to mount l Space savings l High power density l DS99276E(12/05) IXFH 26N50P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. 26 S 3600 pF 370 pF Crss 40 pF td(on) 20 ns gfs VDS = 20 V; ID = 0.5 ID25, pulse test Ciss Coss 16 VGS = 0 V, VDS = 25 V, f = 1 MHz IXFV 26N50P IXFV 26N50PS TO-247 AD (IXFH) Outline 1 2 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain 3 tr VGS = 10 V, VDS = 0.5 ID25 25 ns td(off) RG = 4 Ω (External) 58 ns tf 20 ns Dim. Qg(on) 60 nC 20 nC A A1 A2 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 25 nC b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 ∅P Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 R S 4.32 6.15 5.49 BSC .170 242 .216 BSC Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 0.31 ° C/W RthJC RthCS (TO-247, PLUS220) ° C/W 0.21 Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 26 A ISM Repetitive 104 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr IF = 25A, -di/dt = 100 A/µs 200 ns QRM IRM VR = 100V, VGS = 0 V 0.6 6 Millimeter Min. Max. PLUS220 (IXFV) Outline µC Α PLUS220SMD (IXFV_S) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 Inches Min. Max. 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFH 26N50P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 60 26 V GS = 10V 8V 7V 24 22 50 45 I D - Amperes 18 I D - Amperes V GS = 10V 8V 55 20 16 14 12 6V 10 7V 40 35 30 25 20 8 6 15 4 10 2 6V 5 5V 0 5V 0 0 1 2 3 4 5 6 7 0 3 6 9 15 18 21 24 27 30 Fig. 4. R DS(on) Normalized to ID = 13A Value v s. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 26 3.1 V GS = 10V 7V 24 22 V GS = 10V 2.8 2.5 18 R DS(on) - Normalized 20 I D - Amperes 12 V DS - Volts V DS - Volts 6V 16 14 12 10 8 6 5V 2.2 I D = 26A 1.9 1.6 I D = 13A 1.3 1 4 0.7 2 0 0.4 0 2 4 6 8 10 12 14 -50 16 -25 V DS - Volts 0 25 50 75 100 125 150 T J - Degrees Centigrade Fig. 5. R DS(on) Normalized to ID = 13A Value v s. Drain Current Fig. 6. Maximum Drain Current v s. Case Temperature 30 3.2 3 V GS = 10V 25 TJ = 125ºC 2.8 2.6 2.4 I D - Amperes R DS(on) - Normalized IXFV 26N50P IXFV 26N50PS 2.2 2 1.8 1.6 20 15 10 1.4 TJ = 25ºC 1.2 5 1 0.8 0 0 5 10 15 20 25 30 35 I D - Amperes © 2006 IXYS All rights reserved 40 45 50 55 60 -50 -25 0 25 50 75 T J - Degrees Centigrade 100 125 150 IXFH 26N50P Fig. 8. Transconductance 50 45 45 40 40 35 35 g f s - Siemens I D - Amperes Fig. 7. Input Admittance 50 30 TJ = 125ºC 25ºC - 40ºC 25 IXFV 26N50P IXFV 26N50PS 20 TJ = - 40ºC 25ºC 125ºC 30 25 20 15 15 10 10 5 5 0 0 3.5 4 4.5 5 5.5 6 6.5 7 0 5 10 15 20 V GS - Volts 25 30 35 40 45 50 55 60 60 65 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 80 10 V DS = 250V 9 70 I D = 13A 8 I G = 10mA 60 I S - Amperes 7 V GS - Volts 50 40 30 TJ = 125ºC 6 5 4 3 20 2 10 TJ = 25ºC 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 5 10 V SD - Volts 15 20 25 30 35 40 45 50 55 Q G - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100 10,000 f = 1 MHz Capacitance - PicoFarads RDS(on) Limit C iss 25µs I D - Amperes 1,000 C oss 100µs 10 1ms 100 10ms DC TJ = 150ºC C rss TC = 25ºC 10 1 0 5 10 15 20 25 30 35 40 V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V DS - Volts 1000 IXFH 26N50P IXFV 26N50P IXFV 26N50PS Fig. 13. Maximum Transient Thermal Resistance R (th)JC - ºC / W 1.000 0.100 0.010 0.0001 0.001 0.01 Pulse W idth - Seconds © 2006 IXYS All rights reserved 0.1 1 10 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.