IXFH50N50P3

IXFT50N50P3 IXFQ50N50P3 IXFH50N50P3 Polar3TM HiperFETTM Power MOSFET VDSS ID25 = 500V = 50A   125m RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-268 (IXFT) G S D (Tab) TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M 500 V VGSS VGSM Continuous Transient  30  40 V V ID25 TC = 25C IDM TC = 25C, Pulse Width Limited by TJM IA 50 A 150 A TC = 25C 25 A EAS TC = 25C 500 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 35 V/ns PD TC = 25C 960 W -55 ... +150  C TJM 150  C Tstg -55 ... +150  C TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque (TO-247 & TO-3P) Weight TO-268 TO-3P TO-247 300 260 °C °C 1.13 / 10 Nm/lb.in 4.0 5.5 6.0 g g g G D G BVDSS VGS = 0V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 4mA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125C © 2017 IXYS CORPORATION, All Rights Reserved 5.0 V           100 nA 25 A 1.5 mA S D (Tab) D = Drain Tab = Drain Features     Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages  V D G = Gate S = Source  Characteristic Values Min. Typ. Max. D (Tab) TO-247 (IXFH)  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) S High Power Density Easy to Mount Space Savings Applications      Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls 125 m DS100461C(3/17) IXFT50N50P3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25, Note 1 27 Ciss S 4335 pF 540 pF 12 pF VGS = 0V, VDS = 25V, f = 1MHz Coss RGi Gate Input Resistance td(on) 1.4   25 Resistive Switching Times tr TO-3P Outline 45 Crss ns 8 ns td(off) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 53 ns tf RG = 2 (External) 10 ns 85 nC 21 nC 30 nC Qg(on) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgs Qgd IXFQ50N50P3 IXFH50N50P3 0.13 C/W RthJC RthCS (TO-247 & TO-3P) C/W 0.25 Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr Characteristic Values Min. Typ. Max. 50 A Repetitive, Pulse Width Limited by TJM 200 A IF = IS, VGS = 0V, Note 1 1.4 V 250 ns IF = 25A, -di/dt = 100A/s IRM VR = 100V, VGS = 0V QRM Note 12 A 880 nC TO-247 Outline 1 1. Pulse test, t  300s, duty cycle, d  2%. 2 P 3 e Terminals: 1 - Gate 3 - Source TO-268 Outline Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2,4 - Drain 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFT50N50P3 o o Fig. 1. Output Characteristics @ TJ = 25 C 50 Fig. 2. Extended Output Characteristics @ TJ = 25 C VGS = 10V 7V 80 35 7V 6V 30 I D - Amperes I D - Amperes VGS = 10V 8V 100 45 40 IXFQ50N50P3 IXFH50N50P3 25 20 60 6V 40 15 10 20 5V 5 5V 0 0 0 1 2 3 4 5 6 0 7 5 10 15 3.4 VGS = 10V 7V 45 25 30 Fig. 4. RDS(on) Normalized to ID = 25A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 50 20 VDS - Volts VDS - Volts VGS = 10V 3.0 40 RDS(on) - Normalized I D - Amperes 2.6 6V 35 30 25 20 5V 15 2.2 I D = 50A 1.8 I D = 25A 1.4 1.0 10 0.6 5 4V 0 0.2 0 3.4 2 4 6 8 10 12 14 -50 16 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 25A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature VGS = 10V 125 150 125 150 50 3.0 40 I D - Amperes RDS(on) - Normalized o TJ = 125 C 2.6 2.2 1.8 30 20 1.4 o TJ = 25 C 10 1.0 0.6 0 0 10 20 30 40 50 60 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 70 80 90 100 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFT50N50P3 Fig. 7. Input Admittance 70 IXFQ50N50P3 IXFH50N50P3 Fig. 8. Transconductance 90 o 60 70 o TJ = 125 C 50 o 25 C o - 40 C g f s - Siemens I D - Amperes TJ = - 40 C 80 40 30 o 25 C 60 50 o 125 C 40 30 20 20 10 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 10 20 30 VGS - Volts 40 50 60 70 80 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 160 VDS = 250V 9 140 I D = 25A 8 I G = 10mA 120 100 VGS - Volts I S - Amperes 7 80 60 o TJ = 125 C 6 5 4 3 40 2 o TJ = 25 C 20 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 10 20 VSD - Volts 50 60 70 80 Fig. 12. Forward-Bias Safe Operating Area 1000 f = 1 MHz RDS(on) Limit 10,000 25μs 100 Ciss 100μs I D - Amperes Capacitance - PicoFarads 40 QG - NanoCoulombs Fig. 11. Capacitance 100,000 30 1,000 Coss 100 10 10 1 1ms 10ms 100ms o TJ = 150 C 0.1 o TC = 25 C Single Pulse Crss 1 0.01 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFT50N50P3 IXFQ50N50P3 IXFH50N50P3 Fig. 12. Maximum Transient Thermal Impedance 1 Fig. 13. Maximium Transient Thermal Impedance aaaa 0.2 Z(th)JC - K / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: F_50N50P3(W7/P7) 3-29-17-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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