IXFH50N60X

Preliminary Technical Information IXFT50N60X IXFQ50N60X IXFH50N60X X-Class HiPerFETTM Power MOSFET VDSS ID25 = 600V = 50A  73m  RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXFT) G S D (Tab) TO-3P (IXFQ) Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 600 V VDGR TJ = 25C to 150C, RGS = 1M 600 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 50 A IDM TC = 25C, Pulse Width Limited by TJM 120 A IA TC = 25C 20 A EAS TC = 25C 2 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 660 W -55 ... +150 C TJ TJM 150 C Tstg -55 ... +150 C 300 260 °C °C TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-247 & TO-3P) Weight TO-268 TO-3P TO-247 1.13 / 10 Nm/lb.in 4.0 5.5 6.0 g g g G D S D (Tab) TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features     International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 600 VGS(th) VDS = VGS, ID = 4mA 2.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V   V 4.5 V  Applications 100 nA  TJ = 125C 25 A 1 mA   RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 73 m   © 2015 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100657A(5/15) IXFT50N60X Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 17 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 28 S 1.1  4660 pF 3300 pF 30 pF 230 750 pF pF 28 ns 62 ns 60 ns 13 ns 116 nC 28 nC 54 nC Crss IXFQ50N60X IXFH50N60X Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.19 C/W RthJC RthCS TO-247 & TO-3P C/W 0.25 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 50 A Repetitive, pulse Width Limited by TJM 200 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 25A, -di/dt = 100A/μs 195 1.6 16 VR = 100V ns μC A Note 1. Pulse test, t  300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFT50N60X Fig. 1. Output Characteristics @ TJ = 25ºC IXFQ50N60X IXFH50N60X Fig. 2. Extended Output Characteristics @ TJ = 25ºC 50 VGS = 10V VGS = 10V 120 9V 40 100 9V I D - Amperes I D - Amperes 8V 30 7V 20 80 8V 60 40 7V 6V 10 20 6V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 5 10 15 VDS - Volts 20 25 30 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 25A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 50 3.4 VGS = 10V 8V VGS = 10V 3.0 40 RDS(on) - Normalized I D - Amperes 2.6 7V 30 20 6V I D = 50A 2.2 1.8 I D = 25A 1.4 1.0 10 0.6 5V 0.2 0 0 1 2 3 4 5 6 7 8 -50 9 0 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 25A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 150 1.3 4.5 VGS = 10V 1.2 BV DSS / V GS(th) - Normalized 4.0 3.5 R DS(on) - Normalized -25 VDS - Volts TJ = 125ºC 3.0 2.5 2.0 TJ = 25ºC 1.5 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.5 0 20 40 60 80 I D - Amperes © 2015 IXYS CORPORATION, All Rights Reserved 100 120 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFT50N60X Fig. 7. Maximum Drain Current vs. Case Temperature IXFQ50N60X IXFH50N60X Fig. 8. Input Admittance 50 60 50 40 I D - Amperes I D - Amperes 40 30 30 TJ = 125ºC 25ºC - 40ºC 20 20 10 10 0 0 -50 -25 0 25 50 75 100 125 3.5 150 4.0 4.5 5.0 TC - Degrees Centigrade 5.5 6.0 6.5 7.0 7.5 8.0 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 50 160 140 TJ = - 40ºC 40 25ºC I S - Amperes g f s - Siemens 120 30 125ºC 20 100 80 60 TJ = 125ºC 40 10 TJ = 25ºC 20 0 0 0 5 10 15 20 25 30 35 40 45 50 0.3 0.4 0.5 0.6 I D - Amperes 0.8 0.9 1.0 1.1 1.2 VSD - Volts Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 f = 1 MHz 9 VDS = 300V Capacitance - PicoFarads I D = 25A 8 I G = 10mA 7 V GS - Volts 0.7 6 5 4 3 2 10,000 Ciss 1,000 Coss 100 10 Crss 1 0 1 0 10 20 30 40 50 60 70 80 90 100 110 120 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFT50N60X Fig. 13. Output Capacitance Stored Energy IXFQ50N60X IXFH50N60X Fig. 14. Forward-Bias Safe Operating Area 35 1000 RDS(on) Limit 30 25µs 25 I D - Amperes EOSS - MicroJoules 100 20 15 100µs 10 1 1ms 10 10ms TJ = 150ºC 0.1 DC TC = 25ºC Single Pulse 5 0 0.01 0 100 200 300 400 500 600 10 100 VDS - Volts 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2015 IXYS CORPORATION, All Rights Reserved IXYS REF: F_50N60X(I8-R4T45) 5-22-15A IXFT50N60X TO-3P Outline TO-268 Outline TO-247 Outline A A2 E 0P 0P1 E1 D A A2 A2 Q + D1 D 2 L1 D2 0P1 1 3 S + D1 D 4 1 + R + A + 0K M D B M 0P O B E S + IXFQ50N60X IXFH50N60X 2 3 4 ixys option L1 C A1 E1 L A1 Terminals: 1 - Gate 3 - Source 2,4 - Drain b b2 c b4 e PINS: 1 - Gate 2, 4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. c b b2 b4 e + J M C AM O PINS: 1 - Gate 2, 4 - Drain 3 - Source Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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