IXGX120N120A3

Preliminary Technical Information IXGK120N120A3 IXGX120N120A3 GenX3TM A3-Class IGBTs VCES = 1200V IC110 = 120A VCE(sat) ≤ 2.20V Ultra-Low Vsat PT IGBTs for up to 3kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 IC110 ILRMS ICM TC = 25°C ( Chip Capability ) TC = 110°C Terminal Current Limit TC = 25°C, 1ms 240 120 75 600 A A A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 1Ω Clamped Inductive Load ICM = 240 @ 0.8 • VCES A PC TC = 25°C 830 W -55 ... +150 °C TJ TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 1.13/10 20..120/4.5..27 Nm/lb.in. N/lb. 10 6 g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 Md FC Mounting Torque ( IXGK ) Mounting Force ( IXGX ) Weight TO-264 PLUS247 G C E E (TAB) PLUS 247TM (IXGX) G C E G = Gate C = Collector (TAB) E = Emitter TAB = Collector Features z z z z Optimized for Low Conduction Losses Square RBSOA High Avalanche Capability International Standard Packages Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VCE = 0V 1200 VGE(th) IC = 1mA, VCE = VGE ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = ±20V VCE(sat) IC 3.0 = 100A, VGE = 15V, Note 1 z 5.0 V 50 μA 3 mA ±400 nA 1.85 2.20 V Applications z z z z z z z z z © 2009 IXYS CORPORATION, All Rights Reserved High Power Density Low Gate Drive Requirement V TJ = 125°C IGES z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits DS99977(02/09) IXGK120N120A3 IXGX120N120A3 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. IC = 60A, VCE = 10V, Note 1 45 Cies Coes 73 TO-264 (IXGK) Outline S 9900 pF 655 pF VCE = 25V, VGE = 0V, f = 1 MHz Cres 240 pF Qg(on) 420 nC Qge 70 nC Qgc 180 nC td(on) 40 ns tri Eon td(off) tfi Eoff IC = IC110, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°C IC = 100A, VGE = 15V VCE = 960V, RG = 1Ω Note 2 td(on) tri Eon td(off) tfi 67 ns 10 mJ 490 ns 325 ns 33 mJ 30 ns Inductive load, TJ = 125°C 75 ns IC = 100A, VGE = 15V 15 mJ 685 ns 680 ns 58 mJ VCE = 960V, RG = 1Ω Note 2 Eoff 0.15 °C/W RthJC RthCK 0.15 °C/W PLUS 247TM (IXGX) Outline Note 1: Pulse Test, t ≤ 300μs, Duty Cycle, d ≤ 2%. 2. Switching Times may Increase for VCE (Clamp) > 0.8 VCES, Higher TJ or Increased RG. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) Dim. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGK120N120A3 IXGX120N120A3 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 240 360 VGE = 15V 13V 11V 220 200 280 180 9V 160 IC - Amperes IC - Amperes VGE = 15V 13V 11V 320 140 120 100 7V 80 240 9V 200 160 7V 120 60 80 40 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 1 2 3 5 6 7 8 VCE - Volts Fig. 3. Output Characteristics @ 125ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 200 9 10 1.6 VGE = 15V 13V 11V 220 VGE = 15V 1.5 I 1.4 VCE(sat) - Normalized 180 160 9V 140 120 100 7V 80 60 C = 240A 1.3 1.2 1.1 I C = 120A I C = 60A 1.0 0.9 0.8 40 0.7 5V 20 0 0.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 -50 -25 0 VCE - Volts 25 50 75 100 125 150 7.5 8.0 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 200 6.0 5.5 180 TJ = 25ºC 5.0 160 4.5 140 IC - Amperes VCE - Volts 4 VCE - Volts 240 IC - Amperes 5V 0 4.0 I 3.5 C = 240A 3.0 100 TJ = 125ºC 25ºC - 40ºC 80 60 120A 2.5 120 40 2.0 1.5 20 60A 1.0 0 6 7 8 9 10 11 12 VGE - Volts © 2009 IXYS CORPORATION, All Rights Reserved 13 14 15 4.0 4.5 5.0 5.5 6.0 VGE - Volts 6.5 7.0 IXGK120N120A3 IXGX120N120A3 Fig. 7. Transconductance Fig. 8. Gate Charge 120 16 TJ = - 40ºC 110 90 80 70 I C = 120A I G = 10mA 12 25ºC VGE - Volts g f s - Siemens VCE = 600V 14 100 125ºC 60 50 10 8 6 40 30 4 20 2 10 0 0 0 20 40 60 80 100 120 140 160 180 200 0 50 100 150 IC - Amperes 200 250 300 350 400 450 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 280 100,000 f = 1MHz Cies 200 10,000 IC - Amperes Capacitance - PicoFarads 240 Coes 1,000 160 120 80 40 TJ = 125ºC RG = 1Ω dV / dt < 10V / ns Cres 100 0 5 10 15 20 25 30 35 0 200 40 300 400 500 600 VCE - Volts 700 800 900 1000 1100 1200 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.000 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_120N120A3(9P)2-19-09 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Switching Energy Loss vs. Collector Current 90 90 36 Eon - Eoff 80 --- 32 TJ = 125ºC , VGE = 15V VCE = 960V C = 100A 20 VCE = 960V 60 30 8 12 20 8 10 4 0 2 3 4 5 6 7 8 9 12 10 30 1 TJ = 125ºC 40 16 10 14 50 40 I C = 50A 16 20 6 TJ = 25ºC 50 10 55 60 65 70 RG - Ohms 90 I C = 100A 14 50 12 40 10 30 8 20 6 I C = 50A 10 0 45 55 65 75 85 95 105 115 VCE = 960V I 700 1100 650 1000 I 600 C 450 2 125 400 800 I 900 1100 800 500 2 3 4 TJ = 25ºC 100 © 2009 IXYS CORPORATION, All Rights Reserved 10 90 95 1150 tf 1050 VCE = 960V 700 t f - Nanoseconds td(off) - - - - RG = 1Ω , VGE = 15V 950 600 850 I C = 50A, 100A 550 400 200 450 300 100 100 500 IC - Amperes 9 300 300 85 8 650 600 80 7 400 400 75 6 750 700 70 5 500 500 65 700 = 50A 600 1 1200 800 TJ = 125ºC 60 C Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 900 55 900 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 350 125 t d(off) - Nanoseconds 700 50 = 100A 550 4 1000 VCE = 960V 200 1300 = 50A 1200 500 t d(off) - Nanoseconds t f - Nanoseconds td(off) - - - - RG = 1Ω , VGE = 15V 600 C RG - Ohms 1000 800 1400 750 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current tf 2 100 td(off) - - - - TJ - Degrees Centigrade 900 95 TJ = 125ºC, VGE = 15V 800 16 60 35 90 t d(off) - Nanoseconds VCE = 960V 25 85 1500 tf 850 18 Eon - MilliJoules Eoff - MilliJoules ---- RG = 1Ω , VGE = 15V 70 80 900 t f - Nanoseconds 80 75 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 20 Eon 4 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff - MilliJoules I 50 70 18 RG = 1Ω , VGE = 15V on 24 80 ---- Eon E 60 Eoff - MilliJoules 28 Eon - MilliJoules Eoff - MilliJoules 70 20 Eoff IXGK120N120A3 IXGX120N120A3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 160 110 90 tr 140 td(on) - - - - 70 = 100A 100 60 80 50 60 40 I 40 C = 50A 30 20 0 1 2 3 4 5 6 7 8 9 90 t r - Nanoseconds t r - Nanoseconds C td(on) - - - - 55 RG = 1Ω , VGE = 15V 50 VCE = 960V 80 45 TJ = 125ºC, 25ºC 70 40 60 35 50 30 40 25 20 30 20 10 20 50 10 RG - Ohms 55 60 65 70 75 80 85 90 95 t d(on) - Nanoseconds I t d(on) - Nanoseconds VCE = 960V tr 100 80 TJ = 125ºC, VGE = 15V 120 60 15 100 IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 100 54 tr 90 50 RG = 1Ω , VGE = 15V VCE = 960V 46 70 42 I C = 100A 60 38 50 34 40 30 I 30 C = 50A 26 20 25 35 45 55 t d(on) - Nanoseconds 80 t r - Nanoseconds td(on) - - - - 65 75 85 95 105 115 22 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_120N120A3(9P)2-19-09 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.