IXGX120N60B

HiPerFASTTM IGBT IXGK 120N60B IXGX 120N60B VCES IC25 VCE(sat) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VCES VGEM Continuous Transient ±20 ±30 V V IC25 IC90 IL(RMS) ICM TC = 25°C TC = 90°C External lead limit TC = 25°C, 1 ms 200 120 76 300 A A A A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 2.4 Ω Clamped inductive load ICM = 200 @ 0.8 VCES A PC TC = 25°C 660 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 °C TL 1.6 mm (0.063 in.) from case for 10 s Md Mounting torque Weight TO-264 0.4/6 PLUS 247 TO-264 = 600 V = 200 A = 2.1 V PLUS 247TM (IXGX) G (TAB) C E TO-264 AA (IXGK) G C Nm/lb.in. 6 10 g g G = Gate C = Collector (TAB) E E = Emitter TAB = Collector Features z z z z International standard packages Very high current, fast switching IGBT Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. BVCES IC = 1 mA, VGE = 0 V 600 VGE(th) IC = 1 mA, VCE = VGE 2.5 ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC TJ = 25°C TJ = 125°C 5.5 z z z V z V z 200 µA 2 mA Advantages z ±400 nA z = IC90, VGE = 15 V © 2004 IXYS All rights reserved 2.1 V AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies z PLUS 247TM package for clip or spring mounting Space savings High power density DS98602B(08/04) IXGK 120N60B IXGX 120N60B Symbol Test Conditions gfs IC Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 60 A; VCE = 10 V, 50 75 S 11000 pF 680 pF 190 pF 350 nC 72 nC 131 nC Inductive load, TJ = 25°°C 60 ns IC = 100A, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 2.4 Ω 45 ns 2.4 mJ PLUS 247TM Outline Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri Eon Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 200 360 ns 160 280 ns 5.5 9.6 mJ td(on) Inductive load, TJ =125°°C 60 ns tri IC = 100A, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 2.4 Ω 60 ns 4.8 mJ 290 ns td(off) tfi Eoff Eon td(off) tfi Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 250 ns 8.7 mJ RthJC Terminals: Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 TO-264 AA Outline 0.19 K/W RthCK 0.15 K/W Dim. Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IXGK 120N60B IXGX 120N60B Fig. 1. Output Characteristics @ 25 ºC Fig. 2. Extended Output Characteristics @ 25 ºC 150 300 VGE = 15V 125 13V 11V 250 9V 100 I C - Amperes I C - Amperes VGE = 15V 13V 11V 75 7V 50 25 200 9V 150 7V 100 50 5V 5V 0 0 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 0.5 1 Fig. 3. Output Characteristics @ 125 ºC 2.5 3 3.5 4 1.2 VGE = 15V 1.2 13V 11V VGE = 15V 1.1 9V VC E (sat)- Normalized 125 I C - Amperes 2 Fig. 4. Dependence of V CE(sat) on Tem perature 150 100 7V 75 50 I C = 150A 1.1 1.0 1.0 I C = 100A 0.9 0.9 0.8 25 0.8 5V 0 I C = 50A 0.7 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 -50 2.4 -25 V CE - Volts 0 25 50 75 100 125 150 7.5 8 TJ - Degrees Centigrade Fig. 5. Collector-to-Em itter Voltage vs . Gate-to-Em itter voltage Fig. 6. Input Adm ittance 180 3.6 TJ = 25ºC 3.4 160 3.2 140 3 I C = 150A 2.8 100A 50A 2.6 I C - Amperes VC E - Volts 1.5 V C E - Volts V C E - Volts 2.4 2.2 120 100 TJ = 125ºC 80 25ºC 60 -40ºC 40 2 20 1.8 0 1.6 6 7 8 9 10 11 V G E - Volts © 2004 IXYS All rights reserved 12 13 14 15 4 4.5 5 5.5 6 6.5 V G E - Volts 7 IXGK 120N60B IXGX 120N60B Fig. 8. Dependence of Turn-off Fig. 7. Transconductance 10 140 9 TJ = -40ºC 25ºC 125ºC 100 TJ = 125ºC VGE = 15V 8 E o f f - milliJoules 120 g f s - Siemens Energy Loss on RG 160 80 60 VCE = 480V 7 6 5 4 40 3 20 2 I C = 50A 1 0 0 20 40 60 80 100 120 140 160 2 180 3 4 5 6 7 8 9 I C - Amperes R G - Ohms Fig. 9. Dependence of Turn-Off Fig. 10. Dependence of Turn-off Energy Loss on Tem perature Energy Loss on IC 5 10 6 R G = 2.7Ω 5 VGE = 15V 4 I C = 100A 5 TJ = 125ºC VCE = 480V 4 E o f f - milliJoules 5 E o f f - MilliJoules I C = 100A TJ = 25ºC 3 3 R G = 2.7Ω 4 VGE = 15V 4 VCE = 480V 3 3 I C = 50A 2 2 2 2 1 50 55 60 65 70 75 80 85 90 95 100 25 35 45 I C - Amperes 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Fig. 11. Dependence of Turn-off Fig. 12. Dependence of Turn-off Sw itching Tim e on RG Sw itching Tim e on IC 350 700 tfi - - - - - - I C = 50A 100A TJ = 125ºC 500 Switching Time - nanoseconds Switching Time - nanoseconds td(off) 600 VGE = 15V VCE = 480V 400 300 I C = 100A 50A 200 300 td(off) tfi - - - - - 250 R G = 2.7Ω 200 VGE = 15V TJ = 125ºC TJ = 25ºC VCE = 480V 150 100 50 100 2 3 4 5 6 7 8 9 10 R G - Ohms IXYS reserves the right to change limits, test conditions, and dimensions. 50 60 70 80 I C - Amperes 90 100 IXGK 120N60B IXGX 120N60B Fig. 13. De pende nce of Turn-off Sw itching Tim e on Tem perature Fig. 14. Gate Charge 350 16 VCE = 300V 14 300 td(off) I C = 100A , tfi - - - - - I C = 100A 12 I G = 10mA R G = 2.7Ω, VGE = 15V 250 VG E - Volts Switching Time - nanoseconds I C = 50A VCE = 480V 200 150 I C = 100A 10 8 6 4 50A 100 2 50 0 25 35 45 55 65 75 85 95 105 115 125 0 100 TJ - Degrees Centigrade 200 300 400 500 Q G - nanoCoulombs Fig. 16. Re vers e-Bias Safe Ope rating Area Fig. 15. Capacitance 100000 220 f = 1 MHz 200 160 I C - Amperes Capacitance - p F 180 C ies 10000 C oes 1000 140 120 100 80 60 40 20 C res 100 TJ = 125ºC R G = 2.7Ω dV/dT < 5V/ns 0 0 5 10 15 20 25 30 35 40 100 150 200 250 300 350 400 450 500 550 600 V C E - Volts V C E - Volts Fig. 17. Maxim um Transient Therm al Resistance R( t h ) J C - ºC / W 1 0.1 0.01 1 10 100 Pulse Width - milliseconds © 2004 IXYS All rights reserved 1000