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2SA1162

2SA1162

  • 厂商:

    JIANGSU(长晶)

  • 封装:

    SOT-23

  • 描述:

    2SA1162

  • 数据手册
  • 价格&库存
2SA1162 数据手册
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors JC(T 2SA1 162 SOT-23 TRANSISTOR (PNP) 3 FEATURES . Low noise  . Complementary to 2SC2712  . Small Package  1 2 1. BASE 2. EMITTER MARKING: SO , SY , SG 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -150 mA PC Collector Power Dissipation 150 mW Thermal Resistance From Junction To Ambient 833 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RΘJA ELECTRICAL CHARACTERISTICS (Ta= 25℃ unless otherwise specified) Symbol Parameter Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA DC current gain hFE VCE=-6V,IC=-2mA Collector-emitter saturation voltage VCE(sat) Transition frequency fT Collector output capacitance Cob Noise figure NF 70 IC=-100mA,IB=-10mA VCE=-10V,IC=-1mA 400 -0.3 80 VCB=-10V,IE=0,f=1MHz VCE=-6V,Ic=0.1mA, f=1KHz,Rg=10KΩ V MHz 7 pF 10 dB CLASSIFICATION OF hFE Rank Range www.cj-elec.com O Y GR(G) 70-140 120-240 200-400 1 C,Oct,2014 A,Jun,2014 Typical Characteristics Static Characteristic IC hFE Ta=100℃ -18uA -16uA -14uA -2 —— COMMON EMITTER VCE=-6V COMMON EMITTER Ta=25℃ DC CURRENT GAIN COLLECTOR CURRENT hFE 300 -20uA -3 IC (mA) -4 -12uA -10uA -8uA -6uA -1 200 Ta=25℃ 100 -4uA IB=-2uA 0 -0.1 -0 -0 -2 -4 -6 -8 COLLECTOR-EMITTER VOLTAGE VCEsat -500 —— VCE -10 -3 -1 -0.3 -10 COLLECTOR CURRENT (V) IC VBEsat -1.2 -100 -150 -30 IC (mA) IC —— BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -300 -100 Ta=100℃ Ta=25℃ -30 -0.8 Ta=25℃ Ta=100℃ -0.4 β=10 β=10 -10 -0.3 -3 -1 -30 -10 COLLECTOR CURRENT IC -150 -10 —— VBE Cob/ Cib 20 —— -100 -150 -30 COLLECTOR CURRENT IC (mA) VCB/ VEB f=1MHz IE=0/ IC=0 Ta=25℃ Cib (pF) 10 Ta=100℃ IC Cob C -10 CAPACITANCE (mA) (mA) -30 -3 Ta=25℃ -1 3 -0.3 -0.1 -0.2 -0.4 -0.6 -0.8 1 -0.1 -1.0 fT 300 —— IC -1 -3 REVERSE VOLTAGE V -0.3 BASE-EMMITER VOLTAGE VBE (V) PC 200 -10 -20 (V) —— Ta VCE=-10V COLLECTOR POWER DISSIPATION PC (mW) (MHz) Ta=25℃ fT TRANSITION FREQUENCY -3 -1 -0.5 COMMON EMITTER VCE=-6V -100 COLLECTOR CURRENT IC -0.0 -0.2 -100 -150 200 100 -1 -3 COLLECTOR CURRENT www.cj-elec.com -30 -10 IC 150 100 50 0 -100 0 (mA) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃ ) C,Oct,2014 A,Jun,2014 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout www.cj-elec.com 3 C,Oct,2014 A,Jun,2014 SOT-23 Tape and Reel www.cj-elec.com 4 C,Oct,2014 A,Jun,2014
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