2SB1116

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB1116 SOT-23 TRANSISTOR (PNP) FEATURES High Collector Power Dissipation z z Complementary to 2SD1616 MARKING：1116 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol 1. BASE Unit Value Collector-Base Voltage -60 V Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -1 A PC Collector Power Dissipation 0.35 W TJ,Tstg Operation Junction and Storage Temperature Range -55-150 ℃ VCBO VCEO 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Parameter Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -60 Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -6 V Collector cut-off current ICBO VCB=-60V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-6V,IC=0 -0.1 μA hFE(1) VCE=-2V,IC=-0.1A 135 hFE(2) VCE=-2V,IC=-1A 81 DC current gain V 600 Collector-emitter saturation voltage VCE(sat) IC=-1A,IB=-50mA -0.3 V Base -emitter saturation voltage VBE(sat) IC=-1A,IB=-50mA -1.2 V -0.7 V Base -emitter voltage VBE Transition frequency fT Collector output capacitance Cob Turn-on time ton Storage time ts Fall time tf VCE=-2V,IC=-0.05A VCE=-2V,IC=-0.1A VCB=-10V,IE=0,f=1MHz VCC=-10V,IC=-0.1A,IB1=-IB2=-0.01A, VBE(Off)=2to3V -0.6 70 MHz 25 pF 0.07 us 0.7 us 0.07 us CLASSIFICATION OF hFE(1) Rank Range www.jscj-elec.com L K U 135-270 200-400 300-600 1 Rev. - 2.0 Typical Characteristics Static Characteristic -400 VCE= -2V -300 -0.9mA hFE -1mA -0.8mA DC CURRENT GAIN IC (mA) COMMON EMITTER Ta=25℃ COLLECTOR CURRENT hFE —— IC 500 -0.7mA -0.6mA -200 -0.5mA -0.4mA -100 -0.3mA o 400 Ta=100 C 300 200 o Ta=25 C 100 -0.2mA IB=-0.1mA -0 -0 -1 -2 -3 -4 -5 COLLECTOR-EMITTER VOLTAGE -0.1 VBEsat —— IC -1 -800 Ta=25℃ -600 Ta=100℃ -400 -10 COLLECTOR CURRENT VCEsat —— -400 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -1000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) -6 (V) VCE IC -100 -1000 (mA) IC β=20 -300 -200 Ta=100℃ -100 Ta=25℃ β=20 -200 -1 -0 -10 -100 COLLECTOR CURRENT IC —— -1000 IC -1000 -1 -10 (mA) -100 COLLECTOR CURRENT VBE Cob / Cib 1000 —— IC -1000 (mA) VCB / VEB IC (mA) f=1MHz IE=0 / IC=0 o C COLLECTOR CURRENT Ta=25 C (pF) -800 CAPACITANCE -600 o Ta=100 C -400 Ta=25℃ Cib 100 Cob 10 -200 VCE=-2V -0 -200 -400 -600 -800 BASE-EMITTER VOLTAGE fT IC TRANSITION FREQUENCY Pc 0.5 COLLECTOR POWER DISSIPATION Pc (W) —— -1 -10 REVERSE VOLTAGE VBE(mV) 150 fT (MHz) 200 1 -0.1 -1000 100 50 —— V (V) -20 Ta 0.4 0.3 0.2 0.1 VCE=-2V o Ta=25 C 0 0.0 -0 -20 -40 -60 COLLECTOR CURRENT www.jscj-elec.com -80 IC -100 0 25 50 75 AMBIENT TEMPERATURE (mA) 2 100 Ta 125 150 (℃ ) Rev. - 2.0 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 3 Rev. - 2.0 SOT-23 Tape and Reel www.jscj-elec.com 4 Rev. - 2.0