2SB1386

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1386 TRANSISTOR (PNP) SOT-89-3L FEATURES z Low collector saturation voltage z Execllent current-to-gain characteristics 1. BASE 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 3. EMITTER Value Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Continuous Collector Current -5 A ICP* Pulsed Collector Current -10 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ *Single pulse,PW=10ms ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-50μA,IE=0 -30 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -20 V Emitter-base breakdown voltage V(BR)EBO IE=-50μA,IC=0 -6 V Collector cut-off current ICBO VCB=-20V,IE=0 -0.5 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.5 μA DC current gain hFE VCE=-2V,IC=-500mA Collector-emitter saturation voltage Transition frequency VCE(sat) fT Collector output capacitance Cob 82 390 IC=-4A,IB=-100mA -1 V VCE=-6V,IC=-50mA,f=30MHz 120 MHz VCB=-20V,IE=0,f=1MHz 60 pF CLASSIFICATION OF hFE Rank Range Marking P Q R 82-180 120-270 180-390 BHP BHQ BHR B,Dec,2011 2SB1386 Typical Characterisitics Static Characteristic IC Ta=100℃ -4mA 400 hFE -3.6mA -3.2mA -0.9 DC CURRENT GAIN COLLECTOR CURRENT —— VCE=-2V COMMON EMITTER Ta=25℃ -1.2 hFE 500 IC (A) -1.5 -2.8mA -2.4mA -2mA -0.6 -1.6mA Ta=25℃ 300 200 -1.2mA -0.3 100 -0.8mA IB=-0.4mA 0 -1E-3 -0.0 -0 -1 -2 -3 COLLECTOR-EMITTER VOLTAGE VCEsat -0.8 —— VCE (V) IC -0.1 VBEsat -1.6 -1 —— IC -3 (A) IC β=40 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) β=40 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) -0.01 COLLECTOR CURRENT -0.6 -0.4 Ta=100℃ -0.2 -1.2 Ta=25℃ -0.8 Ta=100℃ -0.4 Ta=25℃ -0.0 -1E-3 -0.01 -0.1 COLLECTOR CURRENT IC -5 IC -0.0 -1E-3 -5 -1 (A) -0.01 -0.1 -1 COLLECTOR CURRENT —— VBE 1000 Cob/ Cib —— IC -5 (A) VCB/ VEB Ta=25℃ -1 Cib (pF) Ta=100℃ -0.01 -1E-3 -0.2 VCE=-2V -0.4 -0.6 -0.8 BASE-EMMITER VOLTAGE Pc 1.0 COLLECTOR POWER DISSIPATION Pc (W) Cob C Ta=25℃ -0.1 CAPACITANCE COLLCETOR CURRENT IC (A) f=1MHz IE=0/ IC=0 —— -1.0 VBE -1.2 100 10 -0.1 -1 REVERSE VOLTAGE (V) -10 V -20 (V) Ta 0.8 0.6 0.4 0.2 0.0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃) 150 B,Dec,2011