MM5451BN

PRELIMINARY SemiWell Semiconductor 2N7000 Logic N-Channel MOSFET Features ■ RDS(on) (Max 5 Ω )@VGS=10V RDS(on) (Max 5.3Ω )@VGS=4.5V Gate Charge (Typical 0.5nC) Maximum Junction Temperature Range (150°C) Symbol ● 3. Drain ■ ■ 2. Gate ◀ ● ● ▲ 1. Source General Description This Power MOSFET is produced using planar DMOS technology. And this Power MOSFET is well suited for Battery switch, Load switch, Motor controller and other small signal switches. TO-92 1 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TA = 25°C) Drain Current Pulsed Gate to Source Voltage Total Power Dissipation Single Operation (TA=25°C) Total Power Dissipation Single Operation (TA=70°C) Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 10 seconds. (Note 1) Parameter Value 60 200 500 Units V mA mA V W mW °C °C ±20 0.4 3.2 - 55 ~ 150 300 Thermal Characteristics Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient Value Min. - Typ. - Max. 312.5 Units °C/W January, 2003. Rev. 0. Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. 1/6 2N7000 Electrical Characteristics Symbol Off Characteristics BVDSS Δ BVDSS/ Δ TJ IDSS IGSS ( TJ = 25 °C unless otherwise noted ) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature coefficient Drain-Source Leakage Current Gate-Source Leakage, Forward Gate-Source Leakage, Reverse Test Conditions VGS = 0V, ID = 250uA ID = 250uA, referenced to 25 °C VDS = 60V, VGS = 0V VDS = 60V, VGS = 0V, TJ = 125 °C VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VDS = VGS, ID = 250uA VGS = 10 V, ID = 500mA VGS = 4.5 V, ID = 75mA Min 60 - Typ 48 - Max 1 1000 100 Units V mV/°C uA nA nA - - -100 On Characteristics VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-state Resistance 1.0 1.55 1.9 2.5 5 5.3 V Ω Dynamic Characteristics Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS =0 V, VDS =25V, f = 1MHz 20 11 3 25 14 4 pF Dynamic Characteristics Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge(Miller Charge) VDS =30V, VGS =4.5V, ID =200mA (Note 2,3) VDD =30V, ID =200mA, RG =50Ω VGS = 10 V (Note 2,3) 4 2.5 17 7 0.5 0.15 0.2 18 15 44 24 0.65 nC ns - Source-Drain Diode Ratings and Characteristics Symbol IS VSD Parameter Maximum Continuous Diode Forward Current Diode Forward Voltage Test Conditions IS =200mA, VGS =0V (Note 2) Min. - Typ. - Max. 200 1.2 Unit. mA V ※ NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 3. Essentially independent of operating temperature. 2/6 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. 2N7000 Fig 1. On-State Characteristics VGS 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V Top : Fig 2. Transfer Characteristics 10 0 ID, Drain Current [A] ID, Drain Current [A] 10 0 150 C -55 C o o ※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃ 0 1 25 C -1 o ※ Notes : 1. VDS = 10V 2. 250µ s Pulse Test 10 10 10 0 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage 3.0 Fig 4. On State Current vs. Allowable Case Temperature RDS(ON), Drain-Source On-Resistance [mΩ ] IDR, Reverse Drain Current [A] 2.5 10 0 VGS = 4.5V VGS = 10V 2.0 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test 1.5 ※ Note : TJ = 25℃ 1.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD, Source-Drain voltage [V] Fig 5. Capacitance Characteristics 50 Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd Fig 6. Gate Charge Characteristics 12 VGS, Gate-Source Voltage [V] 40 10 VDS = 30V 8 Capacitance [pF] 30 ※ Notes : 1. VGS = 0V 2. f=1MHz VDS = 48V 6 Ciss 20 Coss 10 4 Crss 0 2 ※ Note : ID = 200 mA 0 5 10 15 20 25 30 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 3/6 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. 2N7000 Fig 7. Breakdown Voltage Variation vs. Junction Temperature 1.2 2.5 Fig 8. On-Resistance Variation vs. Junction Temperature BVDSS, (Normalized) Drain-Source Breakdown Voltage RDS(ON), (Normalized) Drain-Source On-Resistance 2.0 1.1 1.5 1.0 1.0 0.9 ※ Notes : 1. VGS = 0 V 2. ID = 250 µ A 0.5 ※ Notes : 1. VGS = 10 V 2. ID = 500 mA 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] 4/6 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. 2N7000 Fig. 9. Gate Charge Test Circuit & Waveforms 50KΩ 12V 200nF 300nF Same Type as DUT VDS VGS Qg V 4.5V Qgs Qgd VGS DUT 1mA Charge Fig 10. Switching Time Test Circuit & Waveforms VDS RL VDD ( 0.5 rated V DS ) VDS 90% 10V V Pulse Generator RG DUT Vin 10% td(on) t on tr td(off) t off tf 5/6 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. 2N7000 TO-92 Package Dimension Dim. A B C D E F G H I J 0.33 2.54 2.54 0.48 0.013 4.43 4.43 14.07 mm Min. Typ. 4.2 3.7 4.83 14.87 0.4 4.83 0.45 0.100 0.100 0.019 0.174 0.174 0.554 Max. Min. Inch Typ. 0.165 0.146 0.190 0.585 0.016 0.190 0.017 Max. A E B F C G 1 D 2 3 1. Source 2. Gate 3. Drain J H I 6/6 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.