APT30DL60BCTG

APT30DL60BCT(G) 600V 30A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode PRODUCT APPLICATIONS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Applications - Induction Heating • Resonant Mode Circuits -ZVS and ZCS Topologies - Phase Shifted Bridge PRODUCT FEATURES • Ultrasoft Recovery Times (trr) • Popular TO-247 Package or Surface Mount D3PAK Package • Ultra Low Forward Voltage • Low Leakage Current PRODUCT BENEFITS • Soft Switching - High Qrr • Low Noise Switching - Reduced Ringing • Higher Reliability Systems • Minimizes or eliminates snubber 1 3 2 1 - Anode 1 2 - Common Cathode Back of Case - Cathode 3 - Anode 2 MAXIMUM RATINGS Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM TJ, TSTG TL All Ratings per leg: TC = 25°C unless otherwise specified. Ratings Unit Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward current (TC = 126°C, Duty Cycle = 0.5) RMS Forward Currrent (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3 ms) Operating and Storage Junction Temperature Range Lead Temperature for 10 Seconds 600 Volts 30 51 320 -55 to 175 °C 300 Amps STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions IF = 30A VF Forward Voltage IF = 60A IF = 30A, TJ = 125°C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V VR = 600V VR = 600V, TJ = 125°C 31 Min Typ 1.25 2.0 1.25 Max 1.6 Unit Volts 25 250 pF 052-6314 Rev B 12 - 2008 μA Microsemi Website - http://www.microsemi.com DYNAMIC CHARACTERISTICS Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM APT30DL60BCT(G) Min Typ 64 ns 317 IF = 30A, diF/dt = -200A/μs VR = 400V, TC = 25°C 962 7 561 IF = 30A, diF/dt = -200A/μs VR = 400V, TC = 125°C 2244 9 264 IF = 30A, diF/dt = -1000A/μs VR = 400V, TC = 125°C 3191 26 nC Amps ns nC Amps ns nC Amps Characteristic / Test Conditions Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C Max Unit THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC WT Characteristic / Test Conditions Junction-to-Case Thermal Resistance Min Typ Max 1.00 Unit °C/W oz g 0.22 Package Weight 5.9 10 Torque Maximum Mounting Torque 1.1 Microsemi reserves the right to change, without notice, the specifications and information contained herein. lb·in N·m 1.2 ZθJC, THERMAL IMPEDANCE (°C/W) 1 0.8 0.6 Note: PDM 0.4 0.2 0 t1 t2 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC t 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 052-6314 Rev B 12 - 2008 TJ (°C) .562 Dissipated Power (Watts) TC (°C) .316 .0828 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. .0019 FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL ZEXT TYPICAL PERFORMANCE CURVES 100 90 80 IF, FORWARD CURRENT (A) 70 60 50 40 30 20 10 0 0 800 TJ= 125°C trr, COLLECTOR CURRENT (A) TJ= 150°C TJ= 55°C 700 600 500 400 300 200 100 0 15A 60A 30A APT30DL60BCT(G) T = 125°C J V = 400V R TJ= 25°C Qrr, REVERSE RECOVERY CHARGE (nC) IRRM, REVERSE RECOVERY CURRENT (A) 0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 2, Forward Current vs. Forward Voltage 4500 T = 125°C 60A J V = 400V R 4000 3500 3000 2500 2000 1500 1000 500 15A 30A 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 3, Reverse Recovery Time vs. Current Rate of Change 32 28 24 20 16 12 8 4 0 T = 125°C J V = 400V R 60A 30A 15A 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change 1.2 1 0.8 0.6 0.4 0.2 0 IRRM 0 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 5, Reverse Recovery Current vs. Current Rate of Change 70 60 50 IF(AV) (A) 40 30 20 10 0 Duty cycle = 0.5 TJ = 126°C Kf, DYNAMIC PARAMETERS (Normalized to 1000A/μs) tRR QRR 0 25 50 75 100 125 150 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) FIGURE 6, Dynamic Parameters vs Junction Temperature 300 CJ, JUNCTION CAPACITANCE (pF) 250 200 150 100 50 0 Case Temperature (°C) FIGURE 7, Maximum Average Forward Current vs. Case Temperature 10 100 400 VR, REVERSE VOLTAGE (V) FIGURE 8, Junction Capacitance vs. Reverse Voltage 1 052-6314 Rev B 12 - 2008 Vr +18V 0V D.U.T. diF /dt Adjust APT30DL60BCT(G) trr/Qrr Waveform CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 2 3 4 IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero 1 4 6 5 3 2 0.25 IRRM Slope = diM/dt trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr. 5 6 Figure 10, Diode Reverse Recovery Waveform and Definitions TO-247 (BCT) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Common Cathode 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 052-6314 Rev B 12 - 2008 Anode 1 Common Cathode Anode 2 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.